1.
Adv Mater
; 23(47): 5633-40, 2011 Dec 15.
Artículo
en Inglés
| MEDLINE
| ID: mdl-22065427
RESUMEN
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
Asunto(s)
Nanoestructuras/química , Nanotecnología/métodos , Óxidos/química , Tantalio/química , Conductividad Eléctrica , Microscopía , Nanoestructuras/ultraestructura , Nanotecnología/instrumentación , Análisis Espectral
2.
Adv Mater
; 22(36): 4034-8, 2010 Sep 22.
Artículo
en Inglés
| MEDLINE
| ID: mdl-20677188