RESUMEN
The fabrication of nanostructures having diameters of sub-5 nm is very a important issue for bottom-up nanofabrication of nanoscale devices. In this work, we report a highly controllable method to create sub-5 nm nano-trenches and nanowires by combining area-selective atomic layer deposition (ALD) with single-walled carbon nanotubes (SWNTs) as templates. Alumina nano-trenches having a depth of 2.6 â¼ 3.0 nm and SiO2 nano-trenches having a depth of 1.9 â¼ 2.2 nm fully guided by the SWNTs have been formed on SiO2/Si substrate. Through infilling ZnO material by ALD in alumina nano-trenches, well-defined ZnO nanowires having a thickness of 3.1 â¼ 3.3 nm have been fabricated. In order to improve the electrical properties of ZnO nanowires, as-fabricated ZnO nanowires by ALD were annealed at 350 °C in air for 60 min. As a result, we successfully demonstrated that as-synthesized ZnO nanowire using a specific template can be made for various high-density resistive components in the nanoelectronics industry.
RESUMEN
Transparent conducting electrodes (TCEs) have attracted considerable attention towards the development of flexible optoelectronic devices. In this study, mixed-dimensional TCEs are fabricated based on the two-dimensional graphene and one-dimensional electrospun metal fiber that can address the shortcomings of each electrode. In comparison with other TCEs, the Ag fiber/graphene hybrid electrodes exhibited a highly stable morphology (67% lower peak-to-valley ratio), low sheet resistance (approximately 11 Ω/sq), high transmittance (approximately 94%), high oxidation stability with excellent flexibility, and outstanding chemical stability. The multiple functionalities of the transparent and flexible hybrid structure highlight its potential for applications in emerging electronics and highly stable optoelectronics.