RESUMEN
By utilizing a racetrack resonator topography, an on-chip mode locked silicon evanescent laser (ML-SEL) is realized that is independent of facet polishing. This enables integration with other devices on silicon and precise control of the ML-SEL's repetition rate through lithographic definition of the cavity length. Both passive and hybrid mode-locking have been achieved with transform limited, 7 ps pulses emitted at a repetition rate of 30 GHz. Jitter and locking range are measured under hybrid mode locking with a minimum absolute jitter and maximum locking range of 364 fs, and 50 MHz, respectively.
Asunto(s)
Electrónica/instrumentación , Rayos Láser , Semiconductores , Diseño de Equipo , Análisis de Falla de Equipo , MicroondasRESUMEN
We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).
RESUMEN
We demonstrate an integrated device for optical payload envelope detection and optical label recovery for optical packet switching. The device is designed to handle asynchronous serially labeled packets with variable length 40 Gbps payloads preceded by 10 Gbps labels. The device outputs two signals: 1. a payload envelope signal corresponding to the temporal location and duration of the optical payload and 2. an electrical label recovered from the optical label. The payload envelope signal has rise and fall times of 3 ns with 150 ps RMS jitter and is used to perform error free label erasure and rewriting. Error free label recovery is also demonstrated.