RESUMEN
We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.
RESUMEN
Silicon nitride is a well-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of nonlinear multi-photon absorption in the erbium lightwave communications band has enabled various nonlinear optic applications in the past decade. Silicon nitride is a dielectric material whose optical and mechanical properties strongly depend on the deposition conditions. In particular, the optical bandgap can be modified with the gas flow ratio during low-pressure chemical vapor deposition (LPCVD). Here we show that this parameter can be controlled in a highly reproducible manner, providing an approach to synthesize the nonlinear Kerr coefficient of the material. This holistic empirical study provides relevant guidelines to optimize the properties of LPCVD silicon nitride waveguides for nonlinear optics applications that rely on the Kerr effect.
RESUMEN
Silicon nitride (SixNy) waveguides constitute a technology platform to realize optical signal processing based on the nonlinear Kerr effect. Varying the stoichiometry of the core (i.e., x and y in silicon nitride) provides an additional degree of freedom for engineering the waveguide properties, such as nonlinear Kerr parameter and dispersion. We demonstrate low-stress high-confinement silicon-rich nitride waveguides with flat and anomalous dispersion over the entire C and L optical wavelength transmission bands for optical signal processing based on cross-phase modulation. The waveguides do not show any nonlinear loss for a measured optical input intensity of up to 1.5 × 109 W/cm2. In particular, we achieve wavelength conversion of 10 Gb/s signals across the C band; XPM broadening is also observed in the O band. In addition, we highlight the use of SixNy waveguides for nonlinear microwave photonics. Specifically, we demonstrate radio-frequency spectral monitoring of optical signals with a bandwidth of hundreds of gigahertz.
RESUMEN
We correct the value for the nonlinear Kerr effect of the silicon-rich nitride waveguide presented in [Opt. Express23, 25828 (20152015)].
RESUMEN
We update the simulations presented in Opt. Lett.41, 2719 (2016)OPLEDP0146-959210.1364/OL.41.002719 using a corrected value for the material nonlinearity.
RESUMEN
We experimentally show octave-spanning supercontinuum generation in a nonstoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band.
RESUMEN
In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (â¼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (â¼10(5)).
RESUMEN
Generation of multiple tones using four-wave mixing (FWM) has been exploited for many applications, ranging from wavelength conversion to frequency comb generation. FWM is a coherent process, meaning that its dynamics strongly depend on the relative phase among the waves involved. The coherent nature of FWM has been exploited for phase-sensitive processing in different waveguide structures, but it has never been studied in integrated microresonators. Waveguides arranged in a resonant way allow for an effective increase in the wavelength conversion efficiency (at the expense of a reduction in the operational bandwidth). In this Letter, we show that phase shaping of a three-wave pump provides an extra degree of freedom for controlling the FWM dynamics in microresonators. We present experimental results in single-mode, normal-dispersion high-Q silicon nitride resonators, and numerical calculations of systems operating in the anomalous dispersion regime. Our results indicate that the wavelength conversion efficiency and modulation instability gain in microcavities pumped by multiple waves can be significantly modified with the aid of simple lossless coherent control techniques.
RESUMEN
In this Letter we introduce a complementary metal-oxide semiconductor (CMOS)-compatible low-loss Si3N4 waveguide platform for nonlinear integrated optics. The waveguide has a moderate nonlinear coefficient of 285 W/km, but the achieved propagation loss of only 0.06 dB/cm and the ability to handle high optical power facilitate an optimal waveguide length for wavelength conversion. We observe a constant quadratic dependence of the four-wave mixing (FWM) process on the continuous-wave (CW) pump when operating in the C-band, which indicates that the waveguide has negligible high-power constraints owing to nonlinear losses. We achieve a conversion efficiency of -26.1 dB and idler power generation of -19.6 dBm. With these characteristics, we present for the first time, to the best of our knowledge, CW-pumped data conversion in a non-resonant Si3N4 waveguide.