Fabrication of Multilayer Borophene on Insulator Structure.

The X-ray photoelectron spectroscopy spectra indicate the peak of BB bonds, implying that the elemental boron structure might be formed after the process. The multilayer ß-borophene is directly observed by transmission electron microscopy (TEM) and the lattice parameters are valid. The middle SiNx layer also can be identified in TEM image. Furthermore, the 1.61 eV bandgap of the multilayer ß-borophene is announced in this study.

Direct formation of large-scale multi-layered germanene on Si substrate.

Germanene layers with lonsdaleite structure has been synthesized from a SiGe thin film for the first time using a N2 plasma-assisted process in this investigation. Multi-layered germanene can be directly observed, and the derived lattice parameters are nearly consistent with the theoretical results. Furthermore, large-scale multi-layered germanene has also been demonstrated for applications.

Preliminary study on spallation target characteristics in an Accelerator-Driven system.

This study aims to investigate the neutronic characteristics of spallation targets for Accelerator-Driven subcritical System (ADS) and find the optimal target design for reducing the strength of the required beam current. All the calculations were conducted using the MCNP6.1 with cross-section library ENDF/B-VII. In this study, the influence of several parameters on spallation targets is investigated, such as neutron production with various spallation target layouts, spallation neutron distribution with different proton beam energy levels, and spallation neutron spectrum.

Burnup computations of online-refueling process for pebble-bed reactors using layer-mixed-shell fuel movement model.

This study aims to propose a model for dynamically simulating the online-refueling process in pebble-bed reactor (PBR) using MCNPX. PBR has a special feature of online-refueling which can greatly reduce the outage time and enable a higher burnup in spent fuel. However, this feature also results in the dynamical fuel movements which may significantly increase the difficulty and the computational time in computer simulation. Therefore, an appropriate model is necessary to be proposed to simulate the burnup characteristics of online-refueling and to reduce the computational time simultaneously. All the calculations in this study were performed using MCNPX 2.7.0 with the ENDF/B-VII continuous energy nuclear data library. The PBR model was built according to the core design of HTR-10 but adopted some reasonable assumptions. The refueling process was emulated by utilizing the fuel loading scenario of the once through then out (OTTO) in combination with the layer-mixed-shell fuel movement. Additionally, the layer-mixed-shell fuel movement considered the concept of fuel channels, where the fuel pebbles only move in the same fuel channel, such that the burnup characteristics of fuel pebbles in both radial and axial direction can be identified separately. The core was divided into 9 fuel zones with a fixed volume and 3 fuel channels with a variety of fuel zones. Furthermore, the number of fuel zones in each fuel channel was determined based on the relative residence time of fuel pebbles in the core. The results revealed that the core can achieve an equilibrium fuel cycle after refueling several times, and after that all the core characteristics can nearly maintain unchanged between different cycles. Although the refueling process was modeled based on the OTTO fuel loading scenario instead of the multi-pass one, the discharged burnup can still reach the target burnup of the spent fuel for HTR-10, i.e. 72 GWd/tHM. In addition, the average discharged burnup under the equilibrium fuel cycle is approximate to 80 GWd/tHM, which also coincides the design value of the spent fuel for HTR-10. Therefore, the layer-mixed-shell movement model can consider the fuel movements in either radial or axial directions simultaneously and enable a more accurate prediction to the real refueling process of HTR-10 than our previous studies.

The advent of multilayer antimonene nanoribbons with room temperature orange light emission.

Multilayer antimonene nanoribbons with room temperature orange light emission uniformly distributed on InSb were synthesized by the plasma-assisted process. The bandgap opening was caused by the quantum confinement effect of the nanoribbon structure and the turbostratic stacking of antimonene layers. This attractive two-dimensional material, whose band structure is proper for applications of transistors and light-emitting diodes, was first synthesized.

Synthesis of nonepitaxial multilayer silicene assisted by ion implantation.

Nonepitaxial multilayer silicene with a lonsdaleite structure was synthesized from a 4H-SiC substrate using an implantation-assisted process. An sp(3)-like bonding signal was fitted in a lonsdaleite Si XPS spectrum. The multilayer silicene was directly observed and the derived interplanar distances were found to be nearly consistent with the theoretical values.

Plasma-Assisted Synthesis of High-Mobility Atomically Layered Violet Phosphorus.

Two-dimensional layered materials such as graphene, transition metal dichalcogenides, and black phosphorus have demonstrated outstanding properties due to electron confinement as the thickness is reduced to atomic scale. Among the phosphorus allotropes, black phosphorus, and violet phosphorus possess layer structure with the potential to be scaled down to atomically thin film. For the first time, the plasma-assisted synthesis of atomically layered violet phosphorus has been achieved. Material characterization supports the formation of violet phosphorus/InN over InP substrate where the layer structure of violet phosphorus is clearly observed. The identification of the crystal structure and lattice constant ratifies the formation of violet phosphorus indeed. The critical concept of this synthesis method is the selective reaction induced by different variations of Gibbs free energy (ΔG) of reactions. Besides, the Hall mobility of the violet phosphorus on the InP substrate greatly increases over the theoretical values of InP bulk material without much reduction in the carrier concentration, suggesting that the mobility enhancement results from the violet phosphorus layers. Furthermore, this study demonstrates a low-cost technique with high compatibility to synthesize the high-mobility atomically layered violet phosphorus and open the space for the study of the fundamental properties of this intriguing material as a new member of the fast growing family of 2D crystals.

Scalable graphene synthesised by plasma-assisted selective reaction on silicon carbide for device applications.

Graphene, a two-dimensional material with honeycomb arrays of carbon atoms, has shown outstanding physical properties that make it a promising candidate material for a variety of electronic applications. To date, several issues related to the material synthesis and device fabrication need to be overcome. Despite the fact that large-area graphene films synthesised by chemical vapour deposition (CVD) can be grown with relatively few defects, the required transfer process creates wrinkles and polymer residues that greatly reduce its performance in device applications. Graphene synthesised on silicon carbide (SiC) has shown outstanding mobility and has been successfully used to develop ultra-high frequency transistors; however, this fabrication method is limited due to the use of costly ultra-high vacuum (UHV) equipment that can reach temperatures over 1500 °C. Here, we show a simple and novel approach to synthesise graphene on SiC substrates that greatly reduces the temperature and vacuum requirements and allows the use of equipment commonly used in the semiconductor processing industry. In this work, we used plasma treatment followed by annealing in order to obtain large-scale graphene films from bulk SiC. After exposure to N2 plasma, the annealing process promotes the reaction of nitrogen ions with Si and the simultaneous condensation of C on the surface of SiC. Eventually, a uniform, large-scale, n-type graphene film with remarkable transport behaviour on the SiC wafer is achieved. Furthermore, graphene field effect transistors (FETs) with high carrier mobilities on SiC were also demonstrated in this study.