Lead-Free AE Sensor Based on BZT-BCT Ceramics.

In this study, an acoustic emission (AE) sensor was fabricated using lead-free Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) ceramics. The acoustic and electromechanical properties of the AE sensor were determined by the shapes of the piezoelectric ceramics. To optimize the AE sensor performance, the shapes of the ceramics were designed according to various diameter/thickness ratios (D/T) = 0.5, 1.0, 1.5, 2.0, 2.5, 3.0. The BZT-BCT ceramic with D/T = 1.0 exhibited excellent values of a piezoelectric charge coefficient (d33), piezoelectric voltage coefficient (g33), and electromechanical coupling factor (kp), which were 370 (pC/N), 11.3 (10-3 Vm/N), and 0.58, respectively. Optimum values of resonant frequency (fr) = 172.724 (kHz), anti-resonant frequency (fa) = 196.067 (kHz), and effective electromechanical coupling factor (keff) = 0.473 were obtained for the manufactured BZT-BCT ceramic with D/T = 1.0. The maximum sensitivity and frequency of the AE sensor made of the BZT-BCT ceramic with a D/T ratio of 1.0 were 65 dB and 30 kHz, respectively.

Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors.

In this paper, the dependency of low frequency noise as a function of the gate voltage was examined for tunneling field effect transistors (TFETs). When the level of gate voltage is low, the tunneling width of the TFETs is large. Thus, electrons move via the trap instead of tunneling directly. On the other hand, when the level of gate voltage is high, the tunneling width of the TFETs becomes narrow. Thus, when the gate voltage is low, the noise level of TFETs is high because electrons pass through the trap. However, when the gate voltage is high, electrons pass directly from valence band of source to conduction band of drain, so the noise level is low. Finding the voltage suitable for this TFET is important to determine the optimum conditions for generating BTBT when measuring TFETs and to reduce noise.

Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks.

The positive bias temperature instability (PBTI) characteristics of fully depleted silicon on insulator (FD-SOI) tunneling field effect transistor (TFET) are investigated in comparison with those of metal oxide semiconductor field effect transistor (MOSFET) fabricated with the same technology process. Unlike some of the previously reported studies, in which the PBTI lifetime of TFET is much longer than that of MOSFET, in this study, the PBTI lifetime of TFET is found to be shorter than that of MOSFET. This result is very interesting, because degradation of electrical parameters of TFET is mainly affected by local traps near the source junction rather than global traps in the channel region. Large degradation of the electrical parameters of TFET due to PBTI stress would result from large fluctuation of the vertical electric field caused by traps near the source junction. This electric field fluctuation near the local region in TFET has more impact on electrical parameter degradation than channel conductivity fluctuation in MOSFET. Therefore, to improve the reliability characteristics of TFET, evaluation of PBTI characteristics and improvement of the quality of gate oxide near the source junction are essential.

Undoped blue organic light-emitting diodes using 2-diphenylaminofluoren-7-ylstyryl derivatives.

Blue fluorescent materials based on diphenylaminofluorenylstyryl derivatives connected with the various end-capping aromatic groups were synthesized and characterized. An OLED, using (E)-9,9-diethyl-7-(4-(4-fluoronaphthalen-1-yl)styryl)-N,N-diphenyl-9 H-fluoren-2-amine(5) in emitting layer, was fabricated. This device showed the highly efficient blue emission with the maximum luminance of 5138 cd/m2, the luminous efficiency of 3.92 cd/A, the power efficiency of 3.17 lm/W, the external quantum efficiency of 2.90% at 20 mA/cm2 and CIE x, y coordinates of (0.14, 0.17).

Effects of co-doping on the red fluorescent OLEDS.

The device performance of red organic light-emitting diodes (OLEDs) was dramatically improved by co-doping of the red fluorescent material of (2Z,2'Z)-3,3'-[4,4"-bis(dimethylamino)-1,1':4',1"-terphenyl-2',5'-diyl]-bis(2-phenylacrylonitrile) (ABCV-P) with the hole transport material of N'-bis-(1-naphyl)-N,N'-diphenyl-1,1 '-biphenyl-4,4'-diamine (NPB) and the electron transport material of bis(2-methyl-8-quninolinato)-4-phenylphenolate aluminum (BAlq). The device structures were ITO/NPB/emitting layers/BAlq/Liq/Al in which the emitting layers were MADN:ABCV-P (40%) (device A), MADN:ABCV-P (40%):NPB (10%) (device B), MADN:ABCV-P (40%):BAlq (10%) (device C) and MADN:ABCV-P (40%):NPB (10%):BAlq (10%) (device D), respectively. The device D co-doped with NPB and BAlq exhibited maximum luminance of 9784 cd/m2, maximum luminous efficiency of 2.82 cd/A and maximum quantum efficiency of 3.19%, respectively, whereas those of the device A doped with only ABCV-P were 7563 cd/m2, 1.98 cd/A and 1.99%.

In Situ Changes in Mechanical Properties Based on Gas Saturation Inside Pressure Vessels.

In previous studies, difficulties were encountered in measuring changes within high-pressure vessels owing to limitations such as sensor connectors and sensor failures under high-pressure conditions. In addition, polymer-gas mixtures experience instantaneous gas desorption upon exiting high-pressure vessels owing to pressure differentials, leading to measurement errors. In this study, a device using magnetic sensors was developed to measure the real-time changes in gas-saturated polymers inside pressure vessels. Experiments on polymethyl methacrylate gas adsorption were conducted with parameters including pressure at 5 MPa and temperatures ranging from -20 to 40 °C for 60 and 180 min. It was observed that at -20 °C, the maximum magnetic field force density and deflection were 391.53 µT and 5.83 mm, respectively, whereas at 40 °C, deflection did not occur, with a value of 321.79 µT. Based on gas saturation experiments, a new model for deflection in high-pressure atmospheres is proposed. Additionally, an ANSYS analysis was conducted to predict the changes in Young's modulus based on gas saturation. In previous studies, mechanical properties were measured outside the pressure vessel, resulting in an error due to a pressure difference, while the proposed method is characterized by the ability to directly measure polymer behavior according to gas saturation in high-pressure vessels using a magnetic sensor in real time. Therefore, it is possible to predict polymer behavior, making it easy to control variables in high-pressure polymer processes.

The new iridium complexes involving pyridylpyridine derivatives for the saturated blue emission.

To obtain a saturated blue phosphorescent material with a good color purity, we have synthesized the new blue emitting iridium complexes with 2, 6-difluoro-3-(4-methylpyridin-2-yl)pyridine (4-Me-dfpypy) as a main ligand. We expected that the LUMO energy levels of the complex might increase upon introduction of an electron donating group such as a methyl group to the pyridyl moieties of the ligand, leading to a wide energy gap of the complex to give the saturated blue emission. We have also introduced a variety of the ancillary ligands to the iridium center to compare the effect of the ancillary ligards on the emission of their complexes. The resulting iridium complexes, Ir(4-Me-dfpypy)3, Ir(4-Me-dfpypy)2(acac), Ir(4-Me-dfpypy)2(pic) and Ir(4-Me-dfpypy)2(trzl-CH3) where acac, pic, and trzl-CH3 represent acetylacetonate, picolinate, and 2-(5-methyl-2H-1,2,4-triazol-3-yl) pyridinate, respectively exhibited the blue emission at 451, 447, 440 and 425 nm in CH2Cl2 solution. The organic light emitting device (OLED) employing homoleptic Ir(4-Me-dfpypy), as the blue dopant was prepared and their electroluminescence was investigated. Ir(4-Me-dfpypy)3 exhibited the blue emission of CIE coordinates (0.22, 0.32).

Highly efficient and stable white organic light emitting diode base on double recombination zones of phosphorescent blue/orange emitters.

We demonstrated efficient and stable white phosphorescent organic light-emitting diodes (OLEDs) with double-emitting layers (D-EMLs), which were comprised of two emissive layers with a hole transport-type host of N,N'-dicarbazolyl-3,5-benzene (mCP) and a electron transport-type host of 2,2',2"-(1,3,5-benzenetryl)tris(1-phenyl)-1H-benzimidazol (TPBi) with blue/orange emitters, respectively. We fabricated two type white devices with single emitting layer (S-EML) and D-EML of orange emitter, maintaining double recombination zone of blue emitter. In addition, the device architecture was developed to confine excitons inside the D-EMLs and to manage triplet excitons by controlling the charge injection. As a result, light-emitting performances of white OLED with D-EMLs were improved and showed the steady CIE coordinates compared to that with S-EML of orange emitter, which demonstrated the maximum luminous efficiency and external quantum efficiency were 21.38 cd/A and 11.09%. It also showed the stable white emission with CIE(x,y) coordinates from (x = 0.36, y = 0.37) at 6 V to (x = 0.33, y = 0.38) at 12 V.

Enhanced efficiency of blue phosphorescent organic light-emitting diode base on triple-emitting layer with mixed host system.

We report an improvement of efficiency in blue phosphorescent organic light-emitting diodes (PHOLEDs) based on triple-emitting layer (T-EML) with mixed host (MH) system using a phosphorescent blue emitter: iridium(III)bis[(4,6-di-fluoropheny)-pyridinato-N,C2]picolinate (Flrpic) doped in N,N'-dicarbazolyl-3,5-benzene (mCP) of hole transport-type host material and 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) of electron transport-type host material. This T-EML device resulted in both an effective electron and hole balance and efficient distribution of the recombination zone. As a result, the property of T-EML device which demonstrated a maximum luminous efficiency of 24.45 cd/A and a external quantum efficiency of 10.9%. It also showed a high maximum power efficiency of 13.82 lm/W, which is approximately two times higher than that of the control device.

Improved efficiency of red phosphorescent organic light-emitting diodes with combination of heterojunction and mixed host structure.

We report an improvement of efficiency in red phosphorescent organic light-emitting diodes (PHOLEDs) based on a combination of heterojunction (HJ) structure and mixed host (MH) system using a phosphorescent red emitter: bis(2-phenylquinolinato)-acetylacetonate iridium III [Ir(pq)2(acac)] doped in 4,4,N,N'-dicarbazolebiphenyl (CBP) of hole transport type host material and 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) of electron transport type host material. This combination device resulted in an effective electron and hole balance and distribution of the recombination zone. Therefore, highly efficient red PHOLEDs with maximum luminous efficiency and external quantum efficiency of 21.93 cd/A and 14.09% were achieved. Moreover, the combination device showed a power efficiency of 9.51 lm/W, which is higher than 7.61 lm/W in the control device at a luminance of 1000 cd/m2.