RESUMEN
Raynaud's phenomenon is a symptom complex manifested as intermittent fingertip ischemia caused by cold or other sympathetic drivers. Secondary Raynaud's phenomenon is often more severe and could even lead to finger ulceration, making it particularly complicated to treat. We describe a case of severe Raynaud's phenomenon secondary to subclinical hypothyroidism lasting for more than 6 hours in a 65-year-old woman. The patient was also diagnosed with hypothyroidism, epilepsy, and secondary soft tissue infection of the right middle and ring fingers. After careful multidisciplinary consultation and discussion, the patient received vasodilation, anticoagulation, thyroxine supplementation, stellate ganglion block, hyperbaric oxygen therapy and debridement. The patient responded well to the medication, avoiding amputation or obviously dysfunction. Multidisciplinary team gathering the doctors from different departments proposes appropriate strategies for patients with severe Raynaud's phenomenon and could improve the prognosis and satisfaction of patient effectively.
Asunto(s)
Hipotiroidismo , Enfermedad de Raynaud , Femenino , Humanos , Anciano , Hipotiroidismo/complicaciones , Enfermedad de Raynaud/etiología , Enfermedad de Raynaud/terapia , Enfermedad de Raynaud/diagnósticoRESUMEN
We report here on significant enhancement of the photochemical etching of p-type gallium phosphide (GaP) by Au plasmonic nanostructures. The photochemical etching rate of defect (dislocation) states of Au-coated p-GaP samples is ten times higher than blank samples when irradiated with 532 nm laser. It is confirmed that the enhancement of photochemical etching is wavelength selective. Only 532 nm laser can efficiently increase the photochemical etching rate, while lasers of other wavelengths (375, 405, 445, and 473 nm) show limited or negative effects. This observation can be attributed to defect (dislocation) enhanced photochemical etching through localized surface plasmon resonance of Au nanostructures. This method may open a new pathway for controlled fabrication of novel optoelectronic devices.