Benchmark Investigation of Band-Gap Tunability of Monolayer Semiconductors under Hydrostatic Pressure with Focus-On Antimony.

In this paper, the band-gap tunability of three monolayer semiconductors under hydrostatic pressure was intensively investigated based on first-principle simulations with a focus on monolayer antimony (Sb) as a semiconductor nanomaterial. As the benchmark study, monolayer black phosphorus (BP) and monolayer molybdenum disulfide (MoS2) were also investigated for comparison. Our calculations showed that the band-gap tunability of the monolayer Sb was much more sensitive to hydrostatic pressure than that of the monolayer BP and MoS2. Furthermore, the monolayer Sb was predicted to change from an indirect band-gap semiconductor to a conductor and to transform into a double-layer nanostructure above a critical pressure value ranging from 3 to 5 GPa. This finding opens an opportunity for nanoelectronic, flexible electronics and optoelectronic devices as well as sensors with the capabilities of deep band-gap tunability and semiconductor-to-metal transition by applying mechanical pressure.

Room temperature ferromagnetism in D-D neutron irradiated rutile TiO2 single crystals.

Room temperature ferromagnetism (RTFM) was observed in unirradiated rutile TiO2 single crystals prepared by the floating zone method due to oxygen vacancy (VO) defects. D-D neutrons mainly collide elastically with TiO2, producing VO, titanium vacancies (VTi) and other point defects; the density and kind of defect is related to the neutron irradiation fluence. D-D neutron irradiation is used to regulate the concentration and type of defect, avoiding impurity elements. As the irradiation fluence increases, the saturation magnetization (Ms) first increases, then decreases and then increases. To verify the origin of RTFM, the CASTEP module was used to calculate the magnetic and structural properties of point defects in TiO2. VO induces a 2.39 µ B magnetic moment, Ti3+ and F+ induce 1.28 µ B and 1.70 µ B magnetic moments, respectively, while VTi induces a magnetic moment of ∼4 µ B. Combining experimental and theoretical results, increases in VO concentration lead to Ms increases; more VO combine with electrons to form F+, inducing a smaller magnetic moment. VO and VTi play a key role and Ms changes accordingly with larger fluence. VO, F+ and VTi are the most likely origins of RTFM.