MXene-Layered Double Hydroxide Reinforced Epoxy Nanocomposite with Enhanced Electromagnetic Wave Absorption, Thermal Conductivity, and Flame Retardancy in Electronic Packaging.

Due to the increased integration and miniaturization of electronic devices, traditional electronic packaging materials, such as epoxy resin (EP), cannot solve electromagnetic interference (EMI) in electronic devices. Thus, the development of multifunctional electronic packaging materials with superior electromagnetic wave absorption (EMA), high heat dissipation, and flame retardancy is critical for current demand. This study employs an in-situ growth method to load layered double hydroxides (LDH) onto transition metal carbides (MXene), synthesizing a novel composite material (MXene@LDH). MXene@LDH possesses a sandwich structure and exhibits excellent EMA performance, thermal conductivity, and flame retardancy. By adjusting the load of LDH, under the synergistic effect of multiple factors, such as dielectric and polarization losses, this work achieves an EMA material with a remarkable minimum reflection loss (RL) of -52.064 dB and a maximum effective absorption bandwidth (EAB) of 4.5 GHz. Furthermore, MXene@LDH emerges a bridging effect in EP, namely MXene@LDH/EP, leading to a 118.75% increase in thermal conductivity compared to EP. Simultaneously, MXene@LDH/EP contributes to the enhanced flame retardancy compared to EP, resulting in a 46.5% reduction in the total heat release (THR). In summary, this work provides a promising candidate advanced electronic packaging material for high-power density electronic packaging.

Significant Enhancement of Thermoelectric Performance in Bi0.5 Sb1.5 Te3 Thin Film via Ferroelectric Polarization Engineering.

The Bi0.5 Sb1.5 Te3 (BST) thin film shows great promise in harvesting low-grade heat energy due to its excellent thermoelectric performance at room temperature. In order to further enhance its thermoelectric performance, specifically the power factor and output power, new approaches are highly desirable beyond the common "composition-structure-performance" paradigm. This study introduces ferroelectric polarization engineering as a novel strategy to achieve these goals. A Pb(Zr0.52 Ti0.48 )O3 /Bi0.5 Sb1.5 Te3 (PZT/BST) hybrid film is fabricated via magnetron sputtering. Density functional theory calculations demonstrate PZT polarization's influence on charge redistribution and interlayer charge transfer at the PZT/BST interface, facilitating adjustable carrier transport behavior and power factor of the BST film. As a result, a 26.7% enhancement of the power factor, from unpolarized 12.0 to 15.2 µW cm-1 K-2 , is reached by 2 kV out-of-plane downward polarization of PZT. Furthermore, a five-leg generator constructed using this PZT/BST hybrid film exhibits a maximum output power density of 13.06 W m-2 at ΔT = 39 K, which is 20.8% higher than that of the unpolarized one (10.81 W m-2 ). The research presents a new approach to enhance thermoelectric thin films' power factor and output performance by introducing ferroelectric polarization engineering.

High Thermoelectric Performance Related to PVDF Ferroelectric Domains in P-Type Flexible PVDF-Bi0.5 Sb1.5 Te3 Composite Film.

There is increasing demand to power Internet of Things devices using ambient energy sources. Flexible, low-temperature, organic/inorganic thermoelectric devices are a breakthrough next-generation approach to meet this challenge. However, these systems suffer from poor performance and expensive processing preventing wide application of the technology. In this study, by combining a ferroelectric polymer (Polyvinylidene fluoride (PVDF, ß phase)) with p-type Bi0.5 Sb1.5 Te3 (BST) a thermoelectric composite film with maximum is produced power factor. Energy filter from ferroelectric-thermoelectric junction also leads to high Seebeck voltage ≈242 µV K-1 . For the first time, compelling evidence is provided that the dipole of a ferroelectric material is helping decouple electron transport related to carrier mobility and the Seebeck coefficient, to provide 5× or more improvement in thermoelectric power factor. The best composition, PVDF/BST film with BST 95 wt.% has a power factor of 712 µW•m-1  K-2 . A thermoelectric generator fabricated from a PVDF/BST film demonstrated Pmax T 12.02 µW and Pdensity 40.8 W m-2 under 50 K temperature difference. This development also provides a new insight into a physical technique, applicable to both flexible and non-flexible thermoelectrics, to obtain comprehensive thermoelectric performance.

Toward Ultrahigh Thermoelectric Performance of Cu2 SnS3 -Based Materials by Analog Alloying.

Cu2 SnS3 is a promising thermoelectric candidate for power generation at medium temperature due to its low-cost and environmental-benign features. However, the high electrical resistivity due to low hole concentration severely restricts its final thermoelectric performance. Here, analog alloying with CuInSe2 is first adopted to optimize the electrical resistivity by promoting the formation of Sn vacancies and the precipitation of In, and optimize lattice thermal conductivity through the formation of stacking faults and nanotwins. Such analog alloying enables a greatly enhanced power factor of 8.03 µW cm-1 K-2 and a largely reduced lattice thermal conductivity of 0.38 W m-1  K-1 for Cu2 SnS3 - 9 mol.% CuInSe2 . Eventually, a peak ZT as high as 1.14 at 773 K is achieved for Cu2 SnS3 - 9 mol.% CuInSe2 , which is one of the highest ZT among the researches on Cu2 SnS3 -based thermoelectric materials. The work implies analog alloying with CuInSe2 is a very effective route to unleash superior thermoelectric performance of Cu2 SnS3 .

Manipulating the Interfacial Band Bending For Enhancing the Thermoelectric Properties of 1T'-MoTe2 /Bi2 Te3 Superlattice Films.

Interfacial charge effects, such as band bending, modulation doping, and energy filtering, are critical for improving electronic transport properties of superlattice films. However, effectively manipulating interfacial band bending has proven challenging in previous studies. In this study, (1T'-MoTe2 )x (Bi2 Te3 )y superlattice films with symmetry-mismatch were successfully fabricated via the molecular beam epitaxy. This enables to manipulate the interfacial band bending, thereby optimizing the corresponding thermoelectric performance. These results demonstrate that the increase of Te/Bi flux ratio (R) effectively tailored interfacial band bending, resulting in a reduction of the interfacial electric potential from ≈127 meV at R = 16 to ≈73 meV at R = 8. It is further verified that a smaller interfacial electric potential is more beneficial for optimizing the electronic transport properties of (1T'-MoTe2 )x (Bi2 Te3 )y . Especially, the (1T'-MoTe2 )1 (Bi2 Te3 )12 superlattice film displays the highest thermoelectric power factor of 2.72 mW m-1 K-2 among all films, due to the synergy of modulation doping, energy filtering, and the manipulation of band bending. Moreover, the lattice thermal conductivity of the superlattice films is significantly reduced. This work provides valuable guidance to manipulate the interfacial band bending and further enhance the thermoelectric performances of superlattice films.

Thermoelectric Performance of the 2D Bi2Si2Te6 Semiconductor.

Bi2Si2Te6, a 2D compound, is a direct band gap semiconductor with an optical band gap of ∼0.25 eV, and is a promising thermoelectric material. Single-phase Bi2Si2Te6 is prepared by a scalable ball-milling and annealing process, and the highly densified polycrystalline samples are prepared by spark plasma sintering. Bi2Si2Te6 shows a p-type semiconductor transport behavior and exhibits an intrinsically low lattice thermal conductivity of ∼0.48 W m-1 K-1 (cross-plane) at 573 K. The first-principles density functional theory calculations indicate that such low lattice thermal conductivity is derived from the interactions between acoustic phonons and low-lying optical phonons, local vibrations of Bi, the low Debye temperature, and strong anharmonicity result from the unique 2D crystal structure and metavalent bonding of Bi2Si2Te6. The Bi2Si2Te6 exhibits an optimal figure of merit ZT of ∼0.51 at 623 K, which can be further enhanced by the substitution of Bi with Pb. Pb doping leads to a large increase in power factor S2σ, from ∼3.9 µW cm-1 K-2 of Bi2Si2Te6 to ∼8.0 µW cm-1 K-2 of Bi1.98Pb0.02Si2Te6 at 773 K, owing to the increase in carrier concentration. Moreover, Pb doping induces a further reduction in the lattice thermal conductivity to ∼0.38 W m-1 K-1 (cross-plane) at 623 K in Bi1.98Pb0.02Si2Te6, due to strengthened point defect (PbBi') scattering. The simultaneous optimization of the power factor and lattice thermal conductivity achieves a peak ZT of ∼0.90 at 723 K and a high average ZT of ∼0.66 at 400-773 K in Bi1.98Pb0.02Si2Te6.

Valence Disproportionation of GeS in the PbS Matrix Forms Pb5Ge5S12 Inclusions with Conduction Band Alignment Leading to High n-Type Thermoelectric Performance.

Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe > PbSe > PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge2+ substitution in Pb2+ and discordant off-center behavior; formation of Pb5Ge5S12 as stable second-phase inclusions through valence disproportionation of Ge2+ to Ge0 and Ge4+. PbS and Pb5Ge5S12 exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb5Ge5S12 increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (κlat) of ∼0.61 W m-1 K-1. The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room-temperature electron mobility of ∼121 cm2 V-1 s-1 for 3 × 1019 cm-3 carrier density and a ZT of 1.32 at 923 K. This is ∼55% greater than the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZTavg) of ∼0.76 from 400 to 923 K is the highest for PbS-based systems.

Multifunctional Epoxy-Based Electronic Packaging Material MDCF@LDH/EP for Electromagnetic Wave Absorption, Thermal Management, and Flame Retardancy.

The sharp reduction in size and increase in power density of next-generation integrated circuits lead to electromagnetic interference and heat failure being a key roadblock for their widespread applications in polymer-based electronic packaging materials. This work demonstrates a multifunctional epoxy-based composite (MDCF@LDH/EP) with high electromagnetic wave (EMW) absorption, thermal conductivity, and flame retardancy performance. In which, the synergistic effect of porous structure and heterointerface promotes the multiple reflection and absorption, and dielectric loss of EMW. A low reflection loss of -57.77 dB, and an effective absorption bandwidth of 7.20 GHz are achieved under the fillings of only 10 wt%. Meanwhile, a 241.4% enhanced thermal conductivity of EP is due to the high continuous 3D melamine-derived carbon foams (MDCF), which provides a broad path for the transport of phonons. In addition, MDCF@LDH/EP composite exhibits high thermal stability and flame retardancy, thanks to the physical barrier effect of MDCF@LDH combined with the high temperature cooling properties of NiAl-LDH-CO3 2- . Compared with pure epoxy resin, the peak heat release rate and the total heat release rate are reduced by 19.4% and 30.7%, respectively. Such an excellent comprehensive performance enables MDCF@LDH/EP to a promising electronic packaging material.

Defect engineering in thermoelectric materials: what have we learned?

Thermoelectric energy conversion is an all solid-state technology that relies on exceptional semiconductor materials that are generally optimized through sophisticated strategies involving the engineering of defects in their structure. In this review, we summarize the recent advances of defect engineering to improve the thermoelectric (TE) performance and mechanical properties of inorganic materials. First, we introduce the various types of defects categorized by dimensionality, i.e. point defects (vacancies, interstitials, and antisites), dislocations, planar defects (twin boundaries, stacking faults and grain boundaries), and volume defects (precipitation and voids). Next, we discuss the advanced methods for characterizing defects in TE materials. Subsequently, we elaborate on the influences of defect engineering on the electrical and thermal transport properties as well as mechanical performance of TE materials. In the end, we discuss the outlook for the future development of defect engineering to further advance the TE field.

Cubic AgMnSbTe3 Semiconductor with a High Thermoelectric Performance.

The reaction of MnTe with AgSbTe2 in an equimolar ratio (ATMS) provides a new semiconductor, AgMnSbTe3. AgMnSbTe3 crystallizes in an average rock-salt NaCl structure with Ag, Mn, and Sb cations statistically occupying the Na sites. AgMnSbTe3 is a p-type semiconductor with a narrow optical band gap of ∼0.36 eV. A pair distribution function analysis indicates that local distortions are associated with the location of the Ag atoms in the lattice. Density functional theory calculations suggest a specific electronic band structure with multi-peak valence band maxima prone to energy convergence. In addition, Ag2Te nanograins precipitate at grain boundaries of AgMnSbTe3. The energy offset of the valence band edge between AgMnSbTe3 and Ag2Te is ∼0.05 eV, which implies that Ag2Te precipitates exhibit a negligible effect on the hole transmission. As a result, ATMS exhibits a high power factor of ∼12.2 µW cm-1 K-2 at 823 K, ultralow lattice thermal conductivity of ∼0.34 W m-1 K-1 (823 K), high peak ZT of ∼1.46 at 823 K, and high average ZT of ∼0.87 in the temperature range of 400-823 K.

Strong Valence Band Convergence to Enhance Thermoelectric Performance in PbSe with Two Chemically Independent Controls.

We present an effective approach to favorably modify the electronic structure of PbSe using Ag doping coupled with SrSe or BaSe alloying. The Ag 4d states make a contribution to in the top of the heavy hole valence band and raise its energy. The Sr and Ba atoms diminish the contribution of Pb 6s2 states and decrease the energy of the light hole valence band. This electronic structure modification increases the density-of-states effective mass, and strongly enhances the thermoelectric performance. Moreover, the Ag-rich nanoscale precipitates, discordant Ag atoms, and Pb/Sr, Pb/Ba point defects in the PbSe matrix work together to reduce the lattice thermal conductivity, resulting a record high average ZTavg of around 0.86 over 400-923 K.

High Thermoelectric Performance in the New Cubic Semiconductor AgSnSbSe3 by High-Entropy Engineering.

We investigate the structural and physical properties of the AgSnmSbSem+2 system with m = 1-20 (i.e., SnSe matrix and ∼5-50% AgSbSe2) from atomic, nano, and macro length scales. We find the 50:50 composition, with m = 1 (i.e., AgSnSbSe3), forms a stable cation-disordered cubic rock-salt p-type semiconductor with a special multi-peak electronic valence band structure. AgSnSbSe3 has an intrinsically low lattice thermal conductivity of ∼0.47 W m-1 K-1 at 673 K owing to the synergy of cation disorder, phonon anharmonicity, low phonon velocity, and low-frequency optical modes. Furthermore, Te alloying on Se sites creates a quinary high-entropy NaCl-type solid solution AgSnSbSe3-xTex with randomly disordered cations and anions. The extra point defects and lattice dislocations lead to glass-like lattice thermal conductivities of ∼0.32 W m-1 K-1 at 723 K and higher hole carrier concentration than AgSnSbSe3. Concurrently, the Te alloying promotes greater convergence of the multiple valence band maxima in AgSnSbSe1.5Te1.5, the composition with the highest configurational entropy. Facilitated by these favorable modifications, we achieve a high average power factor of ∼9.54 µW cm-1 K-2 (400-773 K), a peak thermoelectric figure of merit ZT of 1.14 at 723 K, and a high average ZT of ∼1.0 over a wide temperature range of 400-773 K in AgSnSbSe1.5Te1.5.

Enhancement of Thermoelectric Performance for n-Type PbS through Synergy of Gap State and Fermi Level Pinning.

We report that Ga-doped and Ga-In-codoped n-type PbS samples show excellent thermoelectric performance in the intermediate temperature range. First-principles electronic structure calculations reveal that Ga doping can cause Fermi level pinning in PbS by introducing a gap state between the conduction and valence bands. Furthermore, Ga-In codoping introduces an extra conduction band. These added electronic features lead to high electron mobilities up to µH ∼ 630 cm2 V-1 s-1 for n of 1.67 × 1019 cm-3 and significantly enhanced Seebeck coefficients in PbS. Consequently, we obtained a maximum power factor of ∼32 µW cm-1 K-2 at 300 K for Pb0.9875Ga0.0125S, which is the highest reported for PbS-based systems giving a room-temperature figure of merit, ZT, of ∼0.35 and ∼0.82 at 923 K. For the codoped Pb0.9865Ga0.0125In0.001S, the maximum ZT rises to ∼1.0 at 923 K and achieves a record-high average ZT (ZTavg) of ∼0.74 in the temperature range of 400-923 K.

High Figure of Merit in Gallium-Doped Nanostructured n-Type PbTe-xGeTe with Midgap States.

PbTe-based thermoelectric materials are some of the most promising for converting heat into electricity, but their n-type versions still lag in performance the p-type ones. Here, we introduce midgap states and nanoscale precipitates using Ga-doping and GeTe-alloying to considerably improve the performance of n-type PbTe. The GeTe alloying significantly enlarges the energy band gap of PbTe and subsequent Ga doping introduces special midgap states that lead to an increased density of states (DOS) effective mass and enhanced Seebeck coefficients. Moreover, the nucleated Ga2Te3 nanoscale precipitates and off-center discordant Ge atoms in the PbTe matrix cause intense phonon scattering, strongly reducing the thermal conductivity (∼0.65 W m-1 K-1 at 623 K). As a result, a high room-temperature thermoelectric figure of merit ZT ∼ 0.59 and a peak ZTmax of ∼1.47 at 673 K were obtained for the Pb0.98Ga0.02Te-5%GeTe. The ZTavg value that is most relevant for devices is ∼1.27 from 400 to 773 K, the highest recorded value for n-type PbTe.

Enhancement of Thermoelectric Performance in CuSbSe2 Nanoplate-Based Pellets by Texture Engineering and Carrier Concentration Optimization.

This work reports the thermoelectric properties of the CuSbSe2 -x mol% PtTe2 (x = 0, 0.5, 1.0, 1.5, and 2.0) pellets composed of highly oriented single crystalline nanoplates. CuSbSe2 -PtTe2 single crystalline nanoplates are prepared by a wet-chemical process, and the pellets are prepared through a bottom-up self-assembly of the CuSbSe2 -PtTe2 nanoplates and spark plasma sintering (SPS) process. X-ray diffraction and field emission scanning electron microscopic analyses show a highly textured nature with an orientation factor of ≈0.8 for (00l) facets along the primary surface of the pellets (in-plane, perpendicular to the SPS pressure). By this way, bulk-single-crystal-like electrical and thermal transport properties with a strong anisotropy are obtained, which results in an effective optimization on thermoelectric performance. The maximum in-plane thermoelectric figure-of-merit ZT value reaches 0.50 at 673 K for CuSbSe2 -2.0 mol% PtTe2 pellet, which is about five times higher than the in-plane ZT (0.10) for pure CuSbSe2 .

Fe-Doped Ni3 C Nanodots in N-Doped Carbon Nanosheets for Efficient Hydrogen-Evolution and Oxygen-Evolution Electrocatalysis.

Uniform Ni3 C nanodots dispersed in ultrathin N-doped carbon nanosheets were successfully prepared by carburization of the two dimensional (2D) nickel cyanide coordination polymer precursors. The Ni3 C based nanosheets have lateral length of about 200 nm and thickness of 10 nm. When doped with Fe, the Ni3 C based nanosheets exhibited outstanding electrocatalytic properties for both the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). For example, 2 at % Fe (atomic percent) doped Ni3 C nanosheets depict a low overpotential (292 mV) and a small Tafel slope (41.3 mV dec-1 ) for HER in KOH solution. An outstanding OER catalytic property is also achieved with a low overpotential of 275 mV and a small Tafel slope of 62 mV dec-1 in KOH solution. Such nanodot-incorporated 2D hybrid structures can serve as an efficient bifunctional electrocatalyst for overall water splitting.

Synergistic Combination of Sb2Si2Te6 Additives for Enhanced Average ZT and Single-Leg Device Efficiency of Bi0.4Sb1.6Te3-based Composites.

Thermoelectric materials are highly promising for waste heat harvesting. Although thermoelectric materials research has expanded over the years, bismuth telluride-based alloys are still the best for near-room-temperature applications. In this work, a ≈38% enhancement of the average ZT (300-473 K) to 1.21 is achieved by mixing Bi0.4Sb1.6Te3 with an emerging thermoelectric material Sb2Si2Te6, which is significantly higher than that of most BiySb2-yTe3-based composites. This enhancement is facilitated by the unique interface region between the Bi0.4Sb1.6Te3 matrix and Sb2Si2Te6-based precipitates with an orderly atomic arrangement, which promotes the transport of charge carriers with minimal scattering, overcoming a common factor that is limiting ZT enhancement in such composites. At the same time, high-density dislocations in the same region can effectively scatter the phonons, decoupling the electron-phonon transport. This results in a ≈56% enhancement of the thermoelectric quality factor at 373 K, from 0.41 for the pristine sample to 0.64 for the composite sample. A single-leg device is fabricated with a high efficiency of 5.4% at ΔT = 164 K further demonstrating the efficacy of the Sb2Si2Te6 compositing strategy and the importance of the precipitate-matrix interface microstructure in improving the performance of materials for relatively low-temperature applications.

High Thermoelectric Performance in Cu-Doped Bi2Te2.7Se0.33 Due to Cl Doping and Multiscale AgBiSe2.

The thermoelectric performance of n-type Bi2Te3 needs further enhancement to match that of its p-type Bi2Te3 counterpart and should be considered for competitive applications. Combining Cu/Cl and multiscale additives (AgBiSe2) presents a suitable route for such enhancement. This is evidence of the enhanced thermoelectric performance of Bi1.995Cu0.005Te2.69Se0.33Cl0.03. Moreover, by incorporating 0.65 wt % AgBiSe2 (ABS) into Bi1.995Cu0.005Te2.69Se0.33Cl0.03, we further reduce its lattice thermal conductivity to ∼0.28 W m-1 K-1 at 353 K owing to the extra phonon scattering of multiscale ABS. Additionally, the Seebeck coefficient enhances (-183.89 µV K-1 at 353 K) owing to the matrix's reduced carrier concentration caused by ABS. As a result, we achieve a high ZT of ∼1.25 (at 353 K) and a high ZTave of ∼1.12 at 300-433 K for Bi1.995Cu0.005Te2.69Se0.33Cl0.03 + 0.65 wt % ABS. This work provides a promising strategy for enhancing the thermoelectric performance of n-type Bi2Te3 through Cu/Cl doping and ABS incorporation.

Accuracy of post-operative recall by degenerative cervical myelopathy patients using the modified Japanese Orthopaedic Association scale.

Background and Aim: The modified Japanese Orthopaedic Association (mJOA) scale is one of the primary measures of neurological function used on patients with degenerative cervical myelopathy (DCM). Contrary to some reports, the mJOA is not based on patient-reported outcomes as it is an assessment conducted by physicians, allied health professionals, or trained staff. To date, the accuracy of post-operative recall by DCM patients of their pre-operative neurological function, as assessed by the mJOA scale, has not been examined. This study, therefore, aimed to evaluate recall accuracy in DCM patients using the mJOA scale. Methods: This study analyzed recall capacity of DCM patients who had undergone anterior cervical discectomy and fusion by a single surgeon at a large academic spine center between February 2012 and August 2017. Patient recall of neurological function pre-surgery was assessed at 3, 12, and 24 months post-surgery using the mJOA scale. Actual mJOA scores were also determined at each follow-up. Recall error (RE) was defined as the difference between recalled mJOA score at each post-operative visit and the actual baseline score. Age, gender, surgical segments, hospital length of stay, actual mJOA scores at follow-up, and actual rate of improvement in mJOA score were analyzed as predictors of recall accuracy. Descriptive statistics were collected to profile the characteristics of patients enrolled in the study cohort. All statistical computing and graphing were performed with R software and generalized estimating equation (GEE) model fitting was done using geepack package. Results: A total of 105 patients (56.2% of males and 43.8% of females) were enrolled in the study. The median ± SD (range) age at the pre-surgical baseline measurement was 50 ± 8 (25 - 78) years. The recalled mJOA scores at the three follow-up time points were lower than the actual mJOA scores. The recall accuracy gradually decreased over time. Estimated coefficients showed that all variables in the GEE model except for surgical fusion segments were significant (P < 0.05). The pre-operative actual baseline mJOA score was inversely associated with RE. An increasing actual mJOA score over time had a significant positive influence on RE. Greater RE was found in males compared to females. Unexpectedly, age was inversely associated with RE. Conclusions: The RE increases with the time interval between pre-surgical measurement and post-surgical follow-up and is more prominent in male DCMs patients following upper spine surgery. Relevance for Patients: It is necessary to select post-operative patients who need to pay attention according to the three factors of post-operative time, gender, and age, that is, patients with large RE should be given early or timely psychological counseling and treatment concerns, so as to reduce the occurrence of potential medical disputes and improve the level of medical safety.

High-Performance Planar Perovskite Solar Cells with a Reduced Energy Barrier and Enhanced Charge Extraction via a Na2WO4-Modified SnO2 Electron Transport Layer.

Tin oxide (SnO2) has been commonly used as an electron transport layer (ETL) in planar perovskite solar cells (p-PSCs) because it can be prepared by a low-temperature solution-processed method. However, the device performance has been restricted due to the limited electrical performance of SnO2 and its mismatched energy level alignment with the perovskite absorber. Considering these problems, sodium tungstate (Na2WO4) has been employed to modify the SnO2 ETL. The conduction band minimum of SnO2 increases and the defects at the ETL/perovskite interface decrease by the modification of the SnO2 ETL with Na2WO4, thus reducing the energy barrier between the ETL and perovskite. In addition, the electron extraction ability has been enhanced and the interface recombination between the ETL and perovskite has also been inhibited. As a result, the photovoltaic performance of p-PSCs based on the modified ETL has been improved, and a champion power conversion efficiency of 21.16% has been achieved compared with the control device of 17.30% with an open circuit voltage increased from 1.075 to 1.162 V.