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Due to its topological protection, the magnetic skyrmion has been intensively studied for both fundamental aspects and spintronics applications. However, despite recent advancements in skyrmion research, the deterministic creation of isolated skyrmions in a generic perpendicularly magnetized film is still one of the most essential and challenging techniques. Here, we present a method to create magnetic skyrmions in typical perpendicular magnetic anisotropy (PMA) films by applying a magnetic field pulse and a method to determine the magnitude of the required external magnetic fields. Furthermore, to demonstrate the usefulness of this result for future skyrmion research, we also experimentally study the PMA dependence on the minimum size of skyrmions. Although field-driven skyrmion generation is unsuitable for device application, this result can provide an easier approach for obtaining isolated skyrmions, making skyrmion-based research more accessible.
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Coupling of spin and heat currents enables the spin Nernst effect, the thermal generation of spin currents in nonmagnets that have strong spin-orbit interaction. Analogous to the spin Hall effect that electrically generates spin currents and associated electrical spin-orbit torques (SOTs), the spin Nernst effect can exert thermal SOTs on an adjacent magnetic layer and control the magnetization direction. Here, the thermal SOT caused by the spin Nernst effect is experimentally demonstrated in W/CoFeB/MgO structures. It is found that an in-plane temperature gradient across the sample generates a magnetic torque and modulates the switching field of the perpendicularly magnetized CoFeB. The W thickness dependence suggests that the torque originates mainly from thermal spin currents induced in W. Moreover, the thermal SOT reduces the critical current for SOT-induced magnetization switching, demonstrating that it can be utilized to control the magnetization in spintronic devices.
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Among two-dimensional (2D) layered van der Waals materials, ferromagnetic 2D materials can be useful for compact low-power spintronic applications. One promising candidate material is Fe3GeTe2 (FGT), which has a strong perpendicular magnetic anisotropy and relatively high Curie temperature. In this study, we confirmed that an oxide layer (O-FGT) naturally forms on top of exfoliated FGT and that an antiferromagnetic coupling (AFC) exists between FGT and O-FGT layers. From a first-principles calculation, oxide formation at the interface of each layer induces an AFC between the layers. An AFC causes a tailed hysteresis loop, where two-magnetization reversal curves are included, and a negative remanence magnetization at a certain temperature range.
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The recent discovery of room-temperature ferromagnetism in 2D van der Waals (vdW) materials, such as Fe3GaTe2 (FGaT), has garnered significant interest in offering a robust platform for 2D spintronic applications. Various fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, such as current-induced magnetization switching or tunneling magnetoresistance. Nevertheless, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. In this work, the current-induced generation of magnetic skyrmions in FGaT flakes employing high-resolution magnetic transmission soft X-ray microscopy is introduced, supported by a feasible mechanism based on thermal effects. Furthermore, direct observation of the current-induced magnetic skyrmion motion at room temperature in FGaT flakes is presented with ultra-low threshold current density. This work highlights the potential of FGaT as a foundation for room-temperature-operating 2D skyrmion device applications.
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We demonstrate here that the current-driven domain wall (DW) in two dimensions forms a "facet" roughness, distinctive to the conventional self-affine roughness induced by a magnetic field. Despite the different universality classes of these roughnesses, both the current- and field-driven DW speed follow the same creep law only with opposite angular dependences. Such angular dependences result in a stable facet angle, from which a single DW image can unambiguously quantify the spin-transfer torque efficiency, an essential parameter in DW-mediated nanodevices.
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We investigate a control scheme for enhancing the controllability of domain-wall (DW) pinning on ferromagnetic devices using an interaction between magnetic charges distributed on a nanobar and at a notch, respectively. The scheme is realized at an artificial notch with a nanobar vertical to it on Permalloy nanowires with an asymmetrical pad. Injection fields for injecting the DWs from the asymmetrical pad to the nanowire show an asymmetrical dependence on the saturation angle for initializing the magnetization of the nanowire, and the injected DWs are pinned by the notch with the nanobar vertical to it. We have found that the landscape of the pinning potential energy experienced by the DWs depends on the magnetized direction of the nanobar and that its level is shifted by the injection field, leading to an increase or decrease in the depinning field with respect to the saturation angle. This is consistent with our estimation based on micromagnetic simulation.
RESUMEN
Controlling the direction of magnetization with an electric current, rather than a magnetic field, is a powerful technique in spintronics. Spin-orbit torque, which generates an effective magnetic field from the injected current, is a promising method for this purpose. Here we show an approach for quantifying the magnitude of spin-orbit torque from a single magnetic image. To achieve this, we deposited two concentric electrodes on top of the magnetic sample to flow a radial current. By counterbalancing the current effect with an external magnetic field, we can create a stable circular magnetization state. We measure the magnitude of spin-orbit torque from the stable radius, providing a new tool for characterizing spin-orbit torque.
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The paradigm shift of information carriers from charge to spin has long been awaited in modern electronics. The invention of the spin-information transistor is expected to be an essential building block for the future development of spintronics. Here, a proof-of-concept experiment of a magnetic skyrmion transistor working at room temperature, which has never been demonstrated experimentally, is introduced. With the spatially uniform control of magnetic anisotropy, the shape and topology of a skyrmion when passing the controlled area can be maintained. The findings will open a new route toward the design and realization of skyrmion-based spintronic devices in the near future.
RESUMEN
A scaling law elucidates the universality in nature, presiding over many physical phenomena which seem unrelated. Thus, exploring the universality class of scaling law in a particular system enlightens its physical nature in relevance to other systems and sometimes unearths an unprecedented new dynamic phase. Here, the dynamics of weakly driven magnetic skyrmions are investigated, and its scaling law is compared with the motion of a magnetic domain wall (DW) creep. This study finds that the skyrmion does not follow the scaling law of the DW creep in 2D space but instead shows a hopping behavior similar to that of the particle-like DW in 1D confinement. In addition, the hopping law satisfies even when a topological charge of the skyrmion is removed. Therefore, the distinct scaling behavior between the magnetic skyrmion and the DW stems from a general principle beyond the topological charge. This study demonstrates that the hopping behavior of skyrmions originates from the bottleneck process induced by DW segments with diverging collective lengths, which is inevitable in any closed-shape spin structure in 2D. This work reveals that the structural topology of magnetic texture determines the universality class of its weakly driven motion, which is distinguished from the universality class of magnetic DW creep.
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We examine magnetic domain wall motion in metallic nanowires Pt-Co-Pt. Regardless of whether the motion is driven by either magnetic fields or current, all experimental data fall onto a single universal curve in the creep regime, implying that both the motions belong to the same universality class. This result is in contrast to the report on magnetic semiconductor (Ga,Mn)As exhibiting two different universality classes. Our finding signals the possible existence of yet other universality classes which go beyond the present understanding of the statistical mechanics of driven interfaces.
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We propose a method to control the polarization of the magnetic domain walls (DWs) in ferromagnetic nanowires. Two neighboring DWs with antiparallel polarization alignment rather than parallel alignment are found to exhibit better stability with a helical magnetic structure that can be hardly be detangled. To achieve such an antiparallel alignment, two co-planar current lines with an angle to the nanowire are designed, from which the Oersted field creates a domain in between the current lines while keeping the polarization of the DWs beneath the current lines, as confirmed by a micromagnetic calculation for ferromagnetic nanowires with perpendicular magnetic anisotropy.
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We have found that the depinning field of domain walls (DWs) in permalloy (Ni(81)Fe(19)) nanowires can be experimentally controlled by interactions between magnetic stray fields and artificial constrictions. A pinning geometry that consists of a notch and a nanobar is considered, where a DW traveling in the nanowire is pinned by the notch with a nanobar vertical to it. We have found that the direction of magnetization of the nanobar affects the shape and local energy minimum of the potential landscape experienced by the DW; therefore, the pinning strength strongly depends on the interaction of the magnetic stray field from the nanobar with the external pinning force of the notch. The mechanism of this pinning behavior is applied for the instant and flexible control of the pinning strength with respect to various DW motions in DW-mediated magnetic memory devices.
RESUMEN
Reported herein is a possible way of controlling the depinning field of magnetic domain walls (DWs) by using a magnetic field H(T) transverse to the nanowire. A typical notch structure-in the form of triangles on both edges of ferromagnetic Permalloy nanowires-is employed to pin the DWs. The depinning field of the DW initially pinned at the notch is then measured with respect to H(T). Interestingly, it is experimentally found that the depinning field is drastically decreased to almost 0 with increasing H(T), due to the internal shift of the DW position at the notch. Moreover, it is experimentally observed that an oscillatory behavior of the depinning field occurs with respect to H(T), Micromagnetic calculation is performed to model the depinning behavior of the DW pinned at the notch structure with respect to H(T). It is ascribed to the natural edge roughness of the nanowire, which means the edge roughness plays an important role in determination of the depinning field.
RESUMEN
It is experimentally reported herein that the injection field of domain walls (DWs) from the nucleation pad to the nanowire is controlled by the angle of the initializing magnetic field with the use of asymmetric sample structures. The injection field is abruptly varied twice between two distinct values at a certain angle. Micromagnetic simulation is used to model the injection of a DW into the nanowire with respect to the angle of the initializing magnetic field. This is ascribed to the different structure of the DW at the junction between the pad and the nanowire, resulting in the different pinning strength of the DW. These observations provide a way to control the injection field of DWs into nanostructures and give a possibility of the fast, reliable motion of the DW with field strengths less than the so-called Walker field on the nanowire by injecting the DW with a known magnetic structure.
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The various spiral structures that exist in nature inspire humanity because of their morphological beauty, and spiral structures are used in various fields, including architecture, engineering, and art. Spiral structures have their own winding directions, and in most spirals, it is difficult to reverse the predetermined winding direction. Here, we show that a rotating spiral exists in magnetic systems for which the winding direction can be easily reversed. A magnetization vector basically has a spiral motion combining a precessional and a damping motion. The application of these basic mechanics to a system composed of magnetic vectors that are affected by a radial current and the Dzyaloshinskii-Moriya interaction forms the rotating magnetic spiral. The winding direction of the magnetic spiral has its own stability, but the direction can be changed using an external magnetic field. This magnetic spiral has a finite size, and the magnetic domain is destroyed at the edge of the spiral, which can create magnetic skyrmions.
RESUMEN
The magnetic skyrmion is a topologically protected spin texture that has attracted much attention as a promising information carrier because of its distinct features of suitability for high-density storage, low power consumption, and stability. One of the skyrmion devices proposed so far is the skyrmion racetrack memory, which is the skyrmion version of the domain-wall racetrack memory. For application in devices, skyrmion racetrack memory requires electrical generation, deletion, and displacement of isolated skyrmions. Despite the progress in experimental demonstrations of skyrmion generation, deletion, and displacement, these three operations have yet to be realized in one device. Here, a route for generating and deleting isolated skyrmion-bubbles through vertical current injection with an explanation of its microscopic origin is presented. By combining the proposed skyrmion-bubble generation/deletion method with the spin-orbit-torque-driven skyrmion shift, a proof-of-concept experimental demonstration of the skyrmion racetrack memory operation in a three-terminal device structure is provided.
RESUMEN
Magnetic domain wall (DW) motion in perpendicularly magnetized materials is drawing increased attention due to the prospect of new type of information storage devices, such as racetrack memory. To augment the functionalities of DW motion-based devices, it is essential to improve controllability over the DW motion. Other than electric current, which is known to induce unidirectional shifting of a train of DWs, an application of in-plane magnetic field also enables the control of DW dynamics by rotating the DW magnetization and consequently modulating the inherited chiral DW structure. Applying an external bias field, however, is not a viable approach for the miniaturization of the devices as the external field acts globally. Here, the programmable exchange-coupled DW motion in the antiferromagnet (AFM)/ferromagnet (FM) system is demonstrated, where the role of an external in-plane field is replaced by the exchange bias field from AFM layer, enabling the external field-free modulations of DW motions. Interestingly, the direction of the exchange bias field can also be reconfigured by simply injecting spin currents through the device, enabling electrical and programmable operations of the device. Furthermore, the result inspires a prototype DW motion-based device based on the AFM/FM heterostructure, that could be easily integrated in logic devices.
RESUMEN
Current-induced magnetic domain wall (DW) motion is an important operating principle of spintronic devices. Injected current generates spin torques (STs) on the DWs in two ways. One is the spin transfer from magnetic domains to the walls by the current flowing in the magnet. Current flow in attached heavy metals also generates another ST because of the spin-Hall effect. Both phenomena explain the wall motions well; therefore, their respective contribution is an important issue. Here, we show the simultaneous measurement of both torques by using magnetic facet domains that form mountain-shaped domains with straight walls. When the STs and the external magnetic field push the walls in opposite directions, the walls should have equilibrium angles to create balanced states. Such angles can be modulated by an additional in-plane magnetic field. Angle measurements distinguish the STs because each torque has a distinct mechanism related to the DW structure.
RESUMEN
Unidirectional motion of magnetic structures such as the magnetic domain and domain walls is a key concept underlying next-generation memory and logic devices. As a potential candidate of such unidirectional motion, it has been recently demonstrated that the magnetic bubblecade-the coherent unidirectional motion of magnetic bubbles-can be generated by applying an alternating magnetic field. Here we report the optimal configuration of applied magnetic field for the magnetic bubblecade. The tilted alternating magnetic field induces asymmetric expansion and shrinkage of the magnetic bubbles under the influence of the Dzyaloshinskii-Moriya interaction, resulting in continuous shift of the bubbles in time. By examining the magnetic bubblecade in Pt/Co/Pt films, we find that the bubblecade speed is sensitive to the tilt angle with a maximum at an angle, which can be explained well by a simple analytical form within the context of the domain-wall creep theory. A simplified analytic formula for the angle for maximum speed is then given as a function of the amplitude of the alternating magnetic field. The present results provide a useful guideline of optimal design for magnetic bubblecade memory and logic devices.
RESUMEN
The one-dimensional magnetic skyrmion motion induced by an electric current has attracted much interest because of its application potential in next-generation magnetic memory devices. Recently, the unidirectional motion of large (20 µm in diameter) magnetic bubbles with two-dimensional skyrmion topology, driven by an oscillating magnetic field, has also been demonstrated. For application in high-density memory devices, it is preferable to reduce the size of skyrmion. Here we show by numerical simulation that a skyrmion of a few tens of nanometres can also be driven by high-frequency field oscillations, but with a different direction of motion from the in-plane component of the tilted oscillating field. We found that a high-frequency field for small skyrmions can excite skyrmion resonant modes and that a combination of different modes results in a final skyrmion motion with a helical trajectory. Because this helical motion depends on the frequency of the field, we can control both the speed and the direction of the skyrmion motion, which is a distinguishable characteristic compared with other methods.