A Novel Route for the Easy Production of Thermochromic VO2 Nanoparticles.

In this work, a simple, fast and dry method for the fabrication of a thermochromic product with a high load of VO2 (M1) consisting of the controlled heat treatment of pure vanadium nanoparticles in air is presented. After a complete design of experiments, it is concluded that the most direct way to attain the maximum transformation of V into VO2 (M1) consists of one cycle with a fast heating ramp of 42 °C s-1 , followed by keeping 700 °C for 530-600 seconds, and a subsequent cooling at 0.05 °C s-1 . Careful examination of these results lead to a second optimum, even more suitable for industrial production (quicker and less energy-intensive because of its lower temperatures and shorter times), consisting of subjecting V to two consecutive cycles of temperatures and times (625 °C for 5 minutes) with similar preheating (42 °C s-1 ) but a much faster postcooling (∼ 8 °C s-1 ). These green reactions only use the power for heating a tube open to atmosphere and a vanadium precursor; without assistance of reactive gases or catalysts, and no special vacuum or pressure requirements. The best products present similar thermochromic properties but higher thermal stability than commercial VO2 particles. These methods can be combined with VO2 doping.

Compositional and structural analysis of engineered stones and inorganic particles in silicotic nodules of exposed workers.

BACKGROUND: Engineered stone silicosis is an emerging disease in many countries worldwide produced by the inhalation of respirable dust of engineered stone. This silicosis has a high incidence among young workers, with a short latency period and greater aggressiveness than silicosis caused by natural materials. Although the silica content is very high and this is the key factor, it has been postulated that other constituents in engineered stones can influence the aggressiveness of the disease. Different samples of engineered stone countertops (fabricated by workers during the years prior to their diagnoses), as well as seven lung samples from exposed patients, were analyzed by multiple techniques. RESULTS: The different countertops were composed of SiO2 in percentages between 87.9 and 99.6%, with variable relationships of quartz and cristobalite depending on the sample. The most abundant metals were Al, Na, Fe, Ca and Ti. The most frequent volatile organic compounds were styrene, toluene and m-xylene, and among the polycyclic aromatic hydrocarbons, phenanthrene and naphthalene were detected in all samples. Patients were all males, between 26 and 46 years-old (average age: 36) at the moment of the diagnosis. They were exposed to the engineered stone an average time of 14 years. At diagnosis, only one patient had progressive massive fibrosis. After a follow-up period of 8 ± 3 years, four patients presented progressive massive fibrosis. Samples obtained from lung biopsies most frequently showed well or ill-defined nodules, composed of histiocytic cells and fibroblasts without central hyalinization. All tissue samples showed high proportion of Si and Al at the center of the nodules, becoming sparser at the periphery. Al to Si content ratios turned out to be higher than 1 in two of the studied cases. Correlation between Si and Al was very high (r = 0.93). CONCLUSION: Some of the volatile organic compounds, polycyclic aromatic hydrocarbons and metals detected in the studied countertop samples have been described as causative of lung inflammation and respiratory disease. Among inorganic constituents, aluminum has been a relevant component within the silicotic nodule, reaching atomic concentrations even higher than silicon in some cases. Such concentrations, both for silicon and aluminum showed a decreasing tendency from the center of the nodule towards its frontier.

Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs.

We present a simple and robust method to acquire quantitative maps of compositional fluctuations in nanostructures from low magnification high-angle annular dark field (HAADF) micrographs calibrated by energy-dispersive X-ray (EDX) spectroscopy in scanning transmission electron microscopy (STEM) mode. We show that a nonuniform background in HAADF-STEM micrographs can be eliminated, to a first approximation, by use of a suitable analytic function. The uncertainty in probe position when collecting an EDX spectrum renders the calibration of HAADF-STEM micrographs indirect, and a statistical approach has been developed to determine the position with confidence. Our analysis procedure, presented in a flowchart to facilitate the successful implementation of the method by users, was applied to discontinuous InGaN/GaN quantum wells in order to obtain quantitative determinations of compositional fluctuations on the nanoscale.

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices.

Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach's optical and structural quality, so the mechanisms by which this improvement is achieved remain unclear. One critical issue in increasing the performance of InAs/GaSb T2SLs arises from the lattice mismatch between InAs and GaSb, leading to interfacial strain in the structure. Not only that but also, since each side of the InAs/GaSb heterosystem does not have common atoms, there is a possibility of atomic intermixing at the IFs. To address such issues, an intentional InSb interfacial layer is commonly introduced at the InAs-on-GaSb and GaSb-on-InAs IFs to compensate for the strain and the chemical mismatches. In this report, we investigate InAs/GaSb T2SLs with (Sample A) and without (Sample B) InSb IF layers emitting in the mid-wavelength infrared (MWIR) through photoluminescence (PL) and band structure simulations. The PL studies indicate that the maximum PL intensity of Sample A is 1.6 times stronger than that of Sample B. This could be attributed to the effect of migration-enhanced epitaxy (MEE) growth mode. Band structure simulations understand the impact of atomic intermixing and segregation at T2SL IFs on the bandgap energy and PL intensity. It is observed that atomic intermixing at the IFs changes the bandgap energy and significantly affects the wave function overlap and the optical property of the samples. Transmission electron microscopy (TEM) measurements reveal that the T2SL IFs in Sample A are very rough compared to sharp IFs in Sample B, indicating a high possibility of atomic intermixing and segregation. Based on these results, it is believed that high-quality heterostructure could be achieved by controlling the IFs to enhance its structural and compositional homogeneities and the optical properties of the T2SLs.

Facile Fabrication of High-Performance Thermochromic VO2-Based Films on Si for Application in Phase-Change Devices.

This work reports on an alternative and advantageous procedure to attain VO2-based thermochromic coatings on silicon substrates. It involves the sputtering of vanadium thin films at glancing angles and their subsequent fast annealing in an air atmosphere. By adjusting thickness and porosity of films as well as the thermal treatment parameters, high VO2(M) yields were achieved for 100, 200, and 300 nm thick layers treated at 475 and 550 °C for reaction times below 120 s. Comprehensive structural and compositional characterization by Raman spectroscopy, X-ray diffraction, and scanning-transmission electron microscopies combined with analytical techniques such as electron energy-loss spectroscopy bring to the fore the successful synthesis of VO2(M) + V2O3/V6O13/V2O5 mixtures. Likewise, a 200 nm thick coating consisting exclusively of VO2(M) is also achieved. Conversely, the functional characterization of these samples is addressed by variable temperature spectral reflectance and resistivity measurements. The best results are obtained for the VO2/Si sample with changes in reflectance of 30-65% in the near-infrared at temperatures between 25 and 110 °C. Similarly, it is also proven that the achieved mixtures of vanadium oxides can be advantageous for certain optical applications in specific infrared windows. Finally, the features of the different structural, optical, and electrical hysteresis loops associated with the metal-insulator transition of the VO2/Si sample are disclosed and compared. These remarkable thermochromic performances hereby accomplished highlight the suitability of these VO2-based coatings for applications in a wide range of optical, optoelectronic, and/or electronic smart devices.

High-resolution electron diffraction: accounting for radially and angularly invariant distortions.

The distortions present in an electron diffraction pattern can be classified into two categories: one is radially invariant and the other is angularly invariant. We report a method to compensate these displacements undergone by diffraction features promoted by any kind of artifacts generated in parallel beam electron diffraction conditions. This approach is not aimed at quantifying these distortions but only intends to aid in the measurement of lattice parameters of crystals with a significant increase of accuracy and precision as compared to previous approaches. It is based on statistical estimations of the relative positions between diffraction rings and/or spots after performing a transformation of the digitalized patterns to polar coordinates. The analytical method is based on fitting a Gaussian type profile to intensity distributions. This makes it possible to determine the lattice parameters of a polycrystal or single crystal with relative errors smaller than 0.1% for diffractograms acquired in photographic films and below 0.01% for those collected in imaging plates.

Atomically resolved tomographic reconstruction of nanoparticles from single projection: Influence of amorphous carbon support.

Nanoparticles have a wide range of applications due to their unique geometry and arrangement of atoms. For a precise structure-property correlation, information regarding atomically resolved 3D structures of nanoparticles is utmost beneficial. Though modern aberration-corrected transmission electron microscopes can resolve atoms with the sub-angstrom resolution, an atomic-scale 3D reconstruction of a nanoparticle using Scanning Transmission Electron Microscopy (STEM) based tomographic method faces hurdles due to high electron irradiation damage and "missing-wedge". Instead, inline 3D holography based tomographic reconstructions from single projection registered at low electron doses is more suitable for defining atomic positions at nanostructures. Nanoparticles are generally supported on amorphous carbon film for Transmission Electron Microscopy (TEM) experiments. However, neglecting the influence of carbon film on the tomographic reconstruction of the nanoparticle may lead to ambiguity. To address this issue, the effect of amorphous carbon support was quantitatively studied using simulations and experiments and it was revealed that increasing thickness and/or density of carbon support increases distortion in tomograms.

Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging.

InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB-stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore, the determination of this characteristic on any wurtzite (semi)polar III-N compound or alloy is essential for defining its applicability. In this paper, the polarity of InN QDs grown on silicon by indium droplet epitaxy plus nitridation and annealing was determined by a modified approach combining exit wave reconstruction with negative-spherical-aberration high-resolution lattice imaging using TEM. Comparing the micrographs of two QDs from the same TEM specimen with the simulated images of InN slab structures generated under the same conditions as of the experiments, it was confirmed that the QDs of the present study are N polar. Given that the settlement of material's polarity has always been a tedious, indirect and controversial issue, the major value of our proposal is to provide a straightforward procedure to determine the polar direction from atomic-resolution focal series images.

Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction.

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.