Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor.

The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (Ids > 1 A mm(-1)) to be defined (0.5 A mm(-1) at 300 °C). The vertical breakdown voltage has been determined to be ∼850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter.

A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in SiO2 layers.

Current-limiting and ultrafast system for the characterization of resistive random access memories.

A new system for the ultrafast characterization of resistive switching phenomenon is developed to acquire the current during the Set and Reset process in a microsecond time scale. A new electronic circuit has been developed as a part of the main setup system, which is capable of (i) applying a hardware current limit ranging from nanoampers up to miliampers and (ii) converting the Set and Reset exponential gate current range into an equivalent linear voltage. The complete system setup allows measuring with a microsecond resolution. Some examples demonstrate that, with the developed setup, an in-depth analysis of resistive switching phenomenon and random telegraph noise can be made.

Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization.

Graphene single-layer films are grown by chemical vapor deposition and transferred onto commercially available conductive tips for atomic force microscopy. Graphene-coated tips are much more resistant to both high currents and frictions than commercially available, metal-varnished, conductive atomic force microscopy tips, leading to much larger lifetimes and more reliable imaging due to a lower tip-sample interaction.

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces.

Conductive atomic force microscopy experiments on gate dielectrics in air, nitrogen, and UHV have been compared to evaluate the impact of the environment on topography and electrical measurements. In current images, an increase of the lateral resolution and a reduction of the conductivity were observed in N(2) and, especially, in UHV (where current depends also on the contact force). Both effects were related to the reduction/elimination of the water layer between the tip and the sample in N(2)/UHV. Therefore, since current measurements are very sensitive to environmental conditions, these factors must be taken into consideration when comparisons between several experiments are performed.