Controlled synthesis of phase-pure InAs nanowires on Si(111) by diminishing the diameter to 10 nm.

Here we report the growth of phase-pure InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag catalysts. A conventional one-step catalyst annealing process is found to give rise to InAs nanowires with diameters ranging from 4.5 to 81 nm due to the varying sizes of the Ag droplets, which reveal strong diameter dependence of the crystal structure. In contrast, a novel two-step catalyst annealing procedure yields vertical growth of highly uniform InAs nanowires ∼10 nm in diameter. Significantly, these ultrathin nanowires exhibit a perfect wurtzite crystal structure, free of stacking faults and twin defects. Using these high-quality ultrathin InAs nanowires as the channel material of metal-oxide-semiconductor field-effect transistor, we have obtained a high ION/IOFF ratio of ∼10(6), which shows great potential for application in future nanodevices with low power dissipation.

Multifunctional L1(0) -Mn(1.5)Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product.

A new kind of multifunctional L1(0) -Mn(1.5)Ga film is demonstrated for the first time. These MBE-grown epitaxial films exhibit pronounced magnetic properties at room temperature, including ultrahigh perpendicular coercivity up to 42.8 kOe, giant perpendicular magnetic anisotropy with a maximum of 21.7 Merg/cm(3) and large magnetic energy products up to 2.60 MGOe, which allow various applications in ultrahigh density recording, spintronics, and permanent magnets.