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We design planar silicon antennas for controlling the emission rate of magnetic or electric dipolar emitters. Evolutionary algorithms coupled to the Green Dyadic Method lead to different optimized geometries which depend on the nature and orientation of the dipoles. We discuss the physical origin of the obtained configurations thanks to modal analysis but also emphasize the role of nanoscale design of the LDOS. We complete our study using finite element method and demonstrate an enhancement up to 2 × 103 of the magnetic Purcell factor in europium ions. Our work brings together random optimizations to explore geometric parameters without constraint, a first order deterministic approach to understand the optimized designs and a modal analysis which clarifies the physical origin of the exaltation of the magnetic Purcell effect.
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We demonstrate inverse design of plasmonic nanoantennas for directional light scattering. Our method is based on a combination of full-field electrodynamical simulations via the Green dyadic method and evolutionary optimization (EO). Without any initial bias, we find that the geometries reproducibly found by EO work on the same principles as radio-frequency antennas. We demonstrate the versatility of our approach by designing various directional optical antennas for different scattering problems. EO-based nanoantenna design has tremendous potential for a multitude of applications like nano-scale information routing and processing or single-molecule spectroscopy. Furthermore, EO can help to derive general design rules and to identify inherent physical limitations for photonic nanoparticles and metasurfaces.
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We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few-nanometer thin film of rare-earth-ion-doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resolution of a few hundred nanometers, our approach appeals by its simplicity and high signal-to-noise ratio. We demonstrate our technique at the example of single silicon nanorods and dimers, in which we find a significant separation of electric and magnetic near-field contributions. Our method paves the way towards the efficient and rapid characterization of the electric and magnetic optical response of complex photonic nanostructures.
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Semiconducting nanowires (NWs) offer the unprecedented opportunity to host different crystal phases in a nanostructure, which enables the formation of polytypic heterostructures where the material composition is unchanged. This characteristic boosts the potential of polytypic heterostructured NWs for optoelectronic and phononic applications. In this work, we investigate cubic Ge NWs where small (â¼20 nm) hexagonal domains are formed due to a strain-induced phase transformation. By combining a nondestructive optical technique (Raman spectroscopy) with density-functional theory (DFT) calculations, we assess the phonon properties of hexagonal Ge, determine the crystal phase variations along the NW axis, and, quite remarkably, reconstruct the relative orientation of the two polytypes. Moreover, we provide information on the electronic band alignment of the heterostructure at points of the Brillouin zone different from the one (Γ) where the direct band gap recombination in hexagonal Ge takes place. We demonstrate the versatility of Raman spectroscopy and show that it can be used to determine the main crystalline, phononic, and electronic properties of the most challenging type of heterostructure (a polytypic, nanoscale heterostructure with constant material composition). The general procedure that we establish can be applied to several types of heterostructures.
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Improving the brightness of single-photon sources by means of optically resonant nanoantennas is a major stake for the development of efficient nanodevices for quantum communications. We demonstrate that nanoxerography by atomic force microscopy makes possible the fast, robust and repeatable positioning of model quantum nanoemitters (nitrogen-vacancy NV centers in nanodiamonds) on a large-scale in the gap of silicon nanoantennas with a dimer geometry. By tuning the parameters of the nanoxerography process, we can statistically control the number of deposited nanodiamonds, yielding configurations down to a unique single photon emitter coupled to these high index dielectric nanoantennas, with high selectivity and enhanced brightness induced by a near-field Purcell effect. Numerical simulations are in very good quantitative agreement with time-resolved photoluminescence experiments. A multipolar analysis reveals in particular all the aspects of the coupling between the dipolar single emitter and the Mie resonances hosted by these simple nanoantennas. This proof of principle opens a path to a genuine and large-scale spatial control of the coupling of punctual quantum nanoemitters to arrays of optimized optically resonant nanoantennas. It paves the way for future fundamental studies in quantum nano-optics and toward integrated photonics applications for quantum technologies.
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Light emission of europium (Eu3+) ions placed in the vicinity of optically resonant nanoantennas is usually controlled by tailoring the local density of photon states (LDOS). We show that the polarization and shape of the excitation beam can also be used to manipulate light emission, as azimuthally or radially polarized cylindrical vector beam offers to spatially shape the electric and magnetic fields, in addition to the effect of silicon nanorings (Si-NRs) used as nanoantennas. The photoluminescence (PL) mappings of the Eu3+ transitions and the Si phonon mappings are strongly dependent of both the excitation beam and the Si-NR dimensions. The experimental results of Raman scattering and photoluminescence are confirmed by numerical simulations of the near-field intensity in the Si nanoantenna and in the Eu3+-doped film, respectively. The branching ratios obtained from the experimental PL maps also reveal a redistribution of the electric and magnetic emission channels. Our results show that it could be possible to spatially control both electric and magnetic dipolar emission of Eu3+ ions by switching the laser beam polarization, hence the near field at the excitation wavelength, and the electric and magnetic LDOS at the emission wavelength. This paves the way for optimized geometries taking advantage of both excitation and emission processes.
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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe2-WSe2) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
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We present the experimental realization of plasmonic hyperdoped Si nanocrystals embedded in silica via a combination of sequential low energy ion implantation and rapid thermal annealing. We show that phosphorus dopants are incorporated into the nanocrystal cores at concentrations up to six times higher than P solid solubility in bulk Si by combining 3D mapping with atom probe tomography and analytical transmission electron microscopy. We shed light on the origin of nanocrystal growth at high P doses, which we attribute to Si recoiling atoms generated in the matrix by P implantation, which likely increase Si diffusivity and feed the Si nanocrystals. We show that dopant activation enables partial nanocrystal surface passivation that can be completed by forming gas annealing. Such surface passivation is a critical step in the formation of plasmon resonance, especially for small nanocrystals. We find that the activation rate in these small doped Si nanocrystals is the same as in bulk Si under the same doping conditions.
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In this letter, the ultrafast vibrational dynamics of individual gold nanorings has been investigated by femtosecond transient absorption spectroscopy. Two acoustic vibration modes have been detected and identified. The influence of the mechanical coupling at the nanoparticle/substrate interface on the acoustic vibrations of the nano-objects is discussed. Moreover, by changing the environment of the nanoring, we provide a clear evidence of the impact of the surrounding medium on the damping of the acoustic vibrations. Such results are reported here for the first time on individual nanoparticles. This work points out a new sensing method based on the sensitivity of the acoustic vibration damping to the surrounding medium.
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Optical metasurfaces have raised immense expectations as cheaper and lighter alternatives to bulk optical components. In recent years, novel components combining multiple optical functions have been proposed pushing further the level of requirement on the manufacturing precision of these objects. In this work, we study in details the influence of the most common fabrication errors on the optical response of a metasurface and quantitatively assess the tolerance to fabrication errors based on extensive numerical simulations. We illustrate these results with the design, fabrication and characterization of a silicon nanoresonator-based metasurface that operates as a beam deflector in the near-infrared range.