Time-bin entangled photon pairs from quantum dots embedded in a self-aligned cavity.

We introduce a scalable photonic platform that enables efficient generation of entangled photon pairs from a semiconductor quantum dot. Our system, which is based on a self-aligned quantum dot- micro-cavity structure, erases the need for complex steps of lithography and nanofabrication. We experimentally show collection efficiency of 0.17 combined with a Purcell enhancement of up to 1.7. We harness the potential of our device to generate photon pairs entangled in time bin, reaching a fidelity of 0.84(5) with the maximally entangled state. The achieved pair collection efficiency is 4 times larger than the state-of-the art for this application. The device, which theoretically supports pair extraction efficiencies of nearly 0.5 is a promising candidate for the implementation of bright sources of time-bin, polarization- and hyper entangled photon pairs in a straightforward manner.

High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx.

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon-dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.