Stacking Polymorphism in PtSe2 Drastically Affects Its Electromechanical Properties.

PtSe2 is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. It is shown that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device are estimated.

Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors.

Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 µm. Multilayered platinum diselenide (PtSe2) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe2-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 µs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 µm indicates the suitability of PtSe2 for PDs far into the IR wavelength range. Our PtSe2 PDs integrated by direct growth outperform PtSe2 PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe2 an attractive 2D material for optoelectronics and PICs.

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding.

Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to [Formula: see text]. Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.

Calibration of Nonstationary Gas Sensors Based on Two-Dimensional Materials.

Two-dimensional materials (2DMs) have high potential in gas sensing, due to their large surface-to-volume ratio. However, most sensors based on 2DMs suffer from the lack of a steady state during gas exposure, hampering sensor calibration. Here, we demonstrate that analysis of the time differential of the signal output enables the calibration of chemiresistors based on platinum or tungsten diselenide (PtSe2, WSe2) and molybdenum disulfide (MoS2), which present nonstationary behavior. 2DMs are synthesized by thermally assisted conversion of predeposited metals on a silicon/silicon dioxide substrate and therefore are integrable with standard complementary metal-oxide semiconductor (CMOS) technology. We analyze the behavior of the sensors at room temperature toward nitrogen dioxide (NO2) in a narrow range from 0.1 to 1 ppm. This study overcomes the problem of the absence of steady-state signals in 2DM gas sensors and thus facilitates their usage in this highly important application.