Dual-tip magnetic force microscopy with suppressed influence on magnetically soft samples.

Standard magnetic force microscopy (MFM) is considered as a powerful tool used for magnetic field imaging at nanoscale. The method consists of two passes realized by the magnetic tip. Within the first one, the topography pass, the magnetic tip directly touches the magnetic sample. Such contact perturbs the magnetization of the sample explored. To avoid the sample touching the magnetic tip, we present a new approach to magnetic field scanning by segregating the topological and magnetic scans with two different tips located on a cut cantilever. The approach minimizes the disturbance of sample magnetization, which could be a major problem in conventional MFM images of soft magnetic samples. By cutting the cantilever in half using the focused ion beam technique, we create one sensor with two different tips--one tip is magnetized, and the other one is left non-magnetized. The non-magnetized tip is used for topography and the magnetized one for the magnetic field imaging. The method developed we call dual-tip magnetic force microscopy (DT-MFM). We describe in detail the dual-tip fabrication process. In the experiments, we show that the DT-MFM method reduces significantly the perturbations of the magnetic tip as compared to the standard MFM method. The present technique can be used to investigate microscopic magnetic domain structures in a variety of magnetic samples and is relevant in a wide range of applications, e.g., data storage and biomedicine.

Mg Doping of N-Polar, In-Rich InAlN.

Metal organic chemical vapor deposition was used to grow N-polar In0.63Al0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and 130 nmol/min, reaching a Cp2Mg/III ratio of 8.3 × 10-3. The grain structure of 360 nm thick InAlN was spoiled by pits after introducing a flow of CP2Mg at 30 nmol/min. The surface quality was improved with a flow of 80 nmol/min; however, detrimental deterioration appeared at 130 nmol/min. This correlated with the XRD shape and determined density of dislocations, indicating a phase separation at the highest flow. Degenerated n-type conduction and a free carrier concentration of ~1019 cm-3 were determined in all samples, with a minor compensation observed at a CP2Mg flow of 30 nmol/min. The room temperature (RT) electron mobility of ~40 cm2/Vs of the undoped sample was reduced to ~6 and ~0.3 cm2/Vs with a CP2Mg flow of 30 and 80 nmol/min, respectively. Scattering at ionized acceptor/donor Mg-related levels is suggested. RT photoluminescence showed a red shift of 0.22 eV from the virgin 1.73 eV peak value with Mg doping. Mobility degradation was found to be the main factor by InAlN resistivity determination, which increased by two orders of magnitude, approaching ~0.5 Ωcm, at the highest Cp2Mg flow.

Additive Manufacturing in Atomic Layer Processing Mode.

Additive manufacturing (3D printing) has not been applicable to micro- and nanoscale engineering due to the limited resolution. Atomic layer deposition (ALD) is a technique for coating large areas with atomic thickness resolution based on tailored surface chemical reactions. Thus, combining the principles of additive manufacturing with ALD could open up a completely new field of manufacturing. Indeed, it is shown that a spatially localized delivery of ALD precursors can generate materials patterns. In this "atomic-layer additive manufacturing" (ALAM), the vertical resolution of the solid structure deposited is about 0.1 nm, whereas the lateral resolution is defined by the microfluidic gas delivery. The ALAM principle is demonstrated by generating lines and patterns of pure, crystalline TiO2 and Pt on planar substrates and conformal coatings of 3D nanostructures. The functional quality of ALAM patterns is exemplified with temperature sensors, which achieve a performance similar to the industry standard. This general method of multimaterial direct patterning is much simpler than standard multistep lithographic microfabrication. It offers process flexibility, saves processing time, investment, materials, waste, and energy. It is envisioned that together with etching, doping, and cleaning performed in a similar local manner, ALAM will create the "atomic-layer advanced manufacturing" family of techniques.

Nanofriction Properties of Mono- and Double-Layer Ti3C2Tx MXenes.

Unique structure and ability to control the surface termination groups of MXenes make these materials extremely promising for solid lubrication applications. Due to the challenging delamination process, the tribological properties of two-dimensional MXenes particles have been mostly investigated as additive components in the solvents working in the macrosystem, while the understanding of the nanotribological properties of mono- and few-layer MXenes is still limited. Here, we investigate the nanotribological properties of mono- and double-layer Ti3C2Tx MXenes deposited by the Langmuir-Schaefer technique on SiO2/Si substrates. The friction of all of the samples demonstrated superior lubrication properties with respect to SiO2 substrate, while the friction force of the monolayers was found to be slightly higher compared to double- and three-layer flakes, which demonstrated similar friction. The coefficient of friction was estimated to be 0.087 ± 0.002 and 0.082 ± 0.003 for mono- and double-layer flakes, respectively. The viscous regime was suggested as the dominant friction mechanism at high scanning velocities, while the meniscus forces affected by contamination of the MXenes surface were proposed to control the friction at low sliding velocities.