RESUMEN
Plastic electrodes are desirable for the rapid development of flexible organic electronics. In this article, a plastic electrode has been prepared by employing traditional conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and plastic substrate polyethersulfone (PES). The completed electrode (Denote as HC-PEDOT:PSS) treated by 80% concentrated sulfuric acid (H2SO4) possesses a high electrical conductivity of over 2673 S/cm and a high transmittance of over 90% at 550 nm. The high conductivity is attributed to the regular arrangement of PEDOT molecules, which has been proved by the X-ray diffraction characterization. Temperature-dependent conductivity measurement reveals that the HC-PEDOT:PSS possesses both semiconducting and metallic properties. The binding force and effects between the PEDOT and PEI are investigated in detail. All plastic solar cells with a classical device structure of PES/HC-PEDOT:PSS/PEI/P3HT:ICBA/EG-PEDOT:PSS show a PCE of 4.05%. The ITO-free device with a structure of Glass/HC-PEDOT:PSS/Al4083/PM6:Y6/PDINO/Ag delivers an open-circuit voltage (VOC) of 0.81 V, short-circuit current (JSC ) of 23.5 mA/cm2, fill factor (FF) of 0.67 and a moderate power conversion efficiency (PCE) of 12.8%. The above results demonstrate the HC-PEDOT:PSS electrode is a promising candidate for all-plastic solar cells and ITO-free organic solar cells.
RESUMEN
A multifunctional group molecule, namely MATC, was first introduced into a Cs/FA-based perovskite used as an additive. An impressive PCE of 21.51% was achieved for the inverted PSCs with reduced defect states and improved perovskite film quality. Moreover, MATC passivation considerably enhanced the stability of the PSC devices.
RESUMEN
N-(3-aminopropyl)-imidazole diiodide (APDI) was introduced on the upper surface of the perovskite for the first time to modulate the terminal groups. The defect traps were suppressed by binding N cations from the APDI with Pb2+. Consequently, the optimum APDI-treated device achieved a PCE of 21.41% and exhibited excellent stability.
RESUMEN
2-TA and 3-TA were introduced for the first time on the surface of ZnO, and used as SAMs for interfacial modification. A highest PCE of 20.6% was achieved for 2-TA PSCs with improved energy alignment and perovskite film quality, and reduced defect density. The modified ZnO exhibited better thermostability of the perovskite and resultant device stability.