Light-Dependent Resistors as Dosimetric Sensors in Radiotherapy.

Safe quality control of radiotherapy treatments lies in reliable dosimetric sensors. Currently, ionization chambers and solid-state diodes along with electrometers as readout systems are accomplishing this task. In this work, we present a well-known and low-cost semiconductor sensor, the light-dependent resistor (LDR), as an alternative to the existing sensing devices for dosimetry. To demonstrate this, a complete characterization of the response to radiation of commercial LDRs has been conducted in terms of sensitivity, reproducibility and thermal correction under different bias voltages. Irradiation sessions have been applied under the common conditions in radiotherapy treatments using a hospital linear accelerator. Moreover, the same electrometer used for the ionization chamber has also been successfully used for LDRs. In comparison with the sensitivity achieved for the ionization chamber (0.2 nC/cGy at 400 V bias voltage), higher sensitivities have been measured for the proposed LDRs, ranging from 0.24 to 1.04 nC/cGy at bias voltages from 30 to 150 V, with a reproducibility uncertainty among samples of around 10%. In addition, LDR temperature dependence has been properly modeled using the simple thermistor model so that an easy thermal drift correction of dose measurements can be applied. Therefore, experimental results show that LDRs can be a reliable alternative to dosimetric sensors with the advantages of low size, affordable cost and the fact that it could be adopted with minimal changes in routine dosimetry quality control since the same readout system is fully compatible.

Commercial photodiodes and phototransistors as dosimeters of photon beams for radiotherapy.

PURPOSE: The response to radiation typically used in radiotherapy treatments has been experimentally evaluated for three samples of two phototransistors (BPW85B and OP505A) and two PIN photodiodes types (VTB8440BH and BPW34S). METHODS: To that end, a staggered irradiation cycle has been applied which included dose rate values from 0.81 to 4.87 cGy/s, achieving a total absorbed dose of 21.4 Gy. The samples have been irradiated with a linear accelerator and the relations between the induced photocurrent and the average and instantaneous dose rates, and between the accumulated charge and the absorbed dose, have been determined. The radiation-induced output currents were measured by means of an external interface of the devices to a previously designed readout unit. RESULTS: Experimental results of Si PIN photodiode BPW34S have shown a sensitivity of (13.9 ± 0.5) nC/cGy, slight sensitivity dependence on dose rate, and a high linearity of the current with the average and instantaneous dose rate, requiring only 10 V of reverse bias voltage. This device thermal drift has characterized and modeled for temperature effect compensation. CONCLUSIONS: Silicon PIN photodiode BPW34S, previously tested for X-rays and Co-60 gamma ray source, can also be a reliable candidate for dose rate and absorbed skin dose determination in typical radiotherapy treatments irradiations. A low sensitivity loss below 2% up to 21.4 Gy has been measured, allowing its use as an affordable reusable skin dosimeter. Moreover, no significant difference has been observed between its response to dose-per-pulse and changing pulse repetition frequency in terms of sensitivity and dependence with dose-rate value.