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In homogeneous solid-state reactions, the single-crystal nature of the starting material remains unchanged, and the system evolves seamlessly through a series of solid solutions of reactant and product. Among [2+2] photodimerizations of cinnamic acid derivatives in the solid state, those involving salts of the 4-aminocinnamic acid have been recognized to proceed homogeneously in a "single-crystal-to-single-crystal" fashion by X-ray diffraction techniques. Here the bromide salt of this compound class is taken as a model system in a Raman spectroscopy study at low wavelengths, to understand how such a mechanism defines the trend of the crystal lattice vibrations during the reaction. Vibrational mode calculations, based on dispersion corrected DFT simulations of the crystal lattices involved in the transformation, have assisted the interpretation of the experiments. Such an approach has allowed us to clarify the spectral signatures and to establish a correlation between the dynamics of the monomer and dimer systems in a process where chemical progress and crystal structural changes are demonstrated to occur simultaneously.
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The electronic properties of a charge-transfer (donor-acceptor) semiconducting organic co-crystal, Perylene:F4-TCNQ (PE:F4) (the donor, D, is PE and the acceptor, A, is 2,3,5,6-tetrafluoro-7,7,8,8 tetracyanoquinodimethane (F4)) in its 3 : 2 stoichiometry, are experimentally and theoretically studied. This is performed by means of electron paramagnetic resonance (EPR) and solid state electrochemical techniques, such as cyclic voltammetry (CV) measurements on single crystals. In particular, solid state electrochemistry proves to be an effective tool to probe, on a macroscopic scale, the electronic characteristics of the co-crystal. However, EPR highlights the presence of spin ½ radicals localized on F4 molecules, possibly linked to defects. The experimental findings are discussed on the basis of density functional theory (DFT) based calculations, carried out using both the projector augmented wave (PAW), with "periodic boundary conditions" (pbc), method and the localized orbitals, molecular cluster, approach. In particular, a satisfying agreement is found between the experimental, 0.336 eV (electrochemical), and theoretical, 0.303 eV (PAW), band gaps. Differences with the reported optical bandgap are discussed considering excitonic effects.
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The presence of a substrate-induced polymorph of 2,7-dioctyloxy[1]benzothieno[3,2-b]benzothiophene is probed in microscopic crystals and in thin films. Two experimental techniques are used: lattice phonon Raman and IR spectroscopy. The bulk crystal and substrate-induced phase have an entirely different molecular packing, and therefore, their Raman spectra are characteristic fingerprints of the respective polymorphs. These spectra can be unambiguously assigned to the individual polymorphs. Drop-cast and spin-coated thin films on solid substrates are investigated in the as-prepared state and after solvent-vapor annealing. Because Raman spectroscopy is less sensitive with decreasing film thickness, IR spectroscopy is shown to be a more feasible tool for phase detection. The surface-induced phase is mainly present in the as-prepared thin films, whereas the bulk phase is present after solvent-vapor annealing. This result suggests that the surface-induced phase is a metastable polymorph.
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Polarized low-frequency Raman microscopy and a posteriori dispersion-corrected density functional simulations are combined to investigate the lattice vibrations of the αI, ß, and γ polymorphs of the model organic semiconductor quinacridone, which are known to display different optical and electronic properties. The comparison between experiments and calculations allows for unambiguous mode assignment and identification of the scattering crystal faces. Conversely, the agreement between simulations and experiments validates the adopted computational methods, which correctly describe the intermolecular interaction of the molecular material. The acquired knowledge of quinacridone lattice dynamics is used to describe the αI to ß thermal transition and, most consequentially, to reliably characterize the electron-lattice phonon coupling strength of the three polymorphs, obtaining hints about the electrical transport mechanism of the material.
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In the field of organic electronics, the semiconductor 7-decyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) has become a benchmark due to its high charge mobility and chemical stability in thin film devices. Its phase diagram is characterized by a crystal phase with a bilayer structure that at high temperature transforms into a Smectic E liquid crystal with monolayer structure. As the charge transport properties appear to depend on the phase present in the thin film, the transition has been the subject of structural and computational studies. Here such a process has been investigated by polarized low frequency Raman spectroscopy, selectively probing the intermolecular dynamics of the two phases. The spectroscopic observations demonstrate the key role played by a displacive component of the transition, with the interpenetration of the crystal bilayers driven by lattice phonon mode softening followed by the intralayer rearrangement of the molecule rigid cores into the herringbone motif of the liquid crystal. The mechanism can be related to the effectiveness of thermal annealing to restore the crystal phase in films.
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Contact resistance and charge trapping are two key obstacles, often intertwined, that negatively impact on the performance of organic field-effect transistors (OFETs) by reducing the overall device mobility and provoking a nonideal behavior. Here, we expose organic semiconductor (OSC) thin films based on blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8) with polystyrene (PS) to (i) a CH3CN vapor annealing process, (ii) a doping I2/water procedure, and (iii) vapors of I2/CH3CN to simultaneously dope and anneal the films. After careful analysis of the OFET electrical characteristics and by performing local Kelvin probe force microscopy studies, we found that the vapor annealing process predominantly reduces interfacial shallow traps, while the chemical doping of the OSC film is responsible for the diminishment of deeper traps and promoting a significant reduction of the contact resistance. Remarkably, the devices treated with I2/CH3CN reveal ideal electrical characteristics with a low level of shallow/deep traps and a very high and almost gate-independent mobility. Hence, this work demonstrates the promising synergistic effects of performing simultaneously a solvent vapor annealing and doping procedure, which can lead to trap-free OSC films with negligible contact resistance problems.
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This work reports on the electrochemical behaviour of Fe and Zn based metal-organic framework (MOF) compounds, which are "doped" with chiral molecules, namely: cysteine and camphor sulfonic acid. Their electrochemical behaviour was thoroughly investigated via "solid-state" electrochemical measurements, exploiting an "ad hoc" tailored experimental set-up: a paste obtained by carefully mixing the MOF with graphite powder is deposited on a glassy carbon (GC) surface. The latter serves as the working electrode (WE) in cyclic voltammetry (CV) measurements. Infrared (IR), X-ray diffraction (XRD) and absorbance (UV-Vis) techniques are exploited for a further characterization of the MOFs' structural and electronic properties. The experimental results are then compared with DFT based quantum mechanical calculations. The electronic and structural properties of the MOFs synthesized in this study depend mainly on the type of metal center, and to a minor extent on the chemical nature of the dopant.
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The photochemical reaction of 9,10-dinitroanthracene (DNO(2)A) to anthraquinone (AQ) + 2NO has been studied by means of lattice phonon Raman spectroscopy in the spectral region 10-150 cm(-1). In fact, crystal-to-crystal transformations are best revealed by following changes in the lattice modes, as even small modifications in the crystal structure lead to dramatic changes in symmetry and selection rules of vibrational modes. While analysis of the lattice modes allowed for the study of the physical changes, the chemical transformation was monitored by measuring the intramolecular Raman-active modes of both reactant and product. On the basis of the experimental data it has been possible, at a microscopic level, to infer crucial information on the reaction mechanism by simultaneously detecting molecular (vibrational modes) and crystal structure (lattice phonons) modifications during the reaction. At a macroscopic level we have detected an intriguing relationship between incident photons and mechanical strain, which manifests itself as a striking bending and unfolding of the specimens under irradiation. To clarify the mechanisms underlying the relationship between incoming light and molecular environment, we have extended the study to high pressure up to 2 GPa. It has been found that above 1 GPa the photoreaction becomes inhibited. The solid-state transformation has also been theoretically modeled, thus identifying the reaction pathway along which the DNO(2)A crystal lattice deforms to finally become the crystal lattice of the AQ product.
Asunto(s)
Antracenos/química , Antraquinonas/síntesis química , Antraquinonas/química , Cristalización , Procesos Fotoquímicos , Presión , Espectrometría RamanRESUMEN
Stannane, SnH(4), has been studied both theoretically, using high-level ab initio methods, and experimentally, using high-resolution spectroscopy to analyze the Sn-H stretching fundamental band of the H(120)SnD(3) isotopologue. The geometry and the anharmonic force field of the molecule have been calculated ab initio, using the coupled-cluster with single, double, and perturbative triple excitations level of theory. H(120)SnD(3), present as minor isotopologue in (120)SnD(4), has been studied by Fourier transform spectroscopy at an effective resolution of ca. 0.005 cm(-1) near 1900 cm(-1) and the ν(1) band was identified. About 360 ro-vibration transitions with J(') up to 18 and K up to 10 have been assigned. Since the spectrum evidenced the existence of some perturbations, the transitions were analyzed either neglecting, or including in the model A(1)∕E Coriolis-type interactions with nearby dark states. The standard deviation of the fits, ca. 1.5 × 10(-3) cm(-1), is about one order of magnitude larger than the estimated experimental precision, and is only slightly dependent on the adopted model. The spectroscopic parameters obtained from this and from previous analyses of stannane isotopologues have been compared with the theoretical results. The theoretical force field is also used to obtain semi-experimental harmonic frequencies and the equilibrium geometry.
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Thin films of the organic semiconductor Ph-BTBT-10 and blends of this material with polystyrene have been deposited by a solution shearing technique at low (1 mm s-1) and high (10 mm s-1) coating velocities and implemented in organic field-effect transistors. Combined X-ray diffraction and electrical characterisation studies prove that the films coated at low speed are significantly anisotropic. The highest mobility is found along the coating direction, which corresponds to the crystallographic a-axis. In contrast, at high coating speed the films are crystallographically less ordered but with better thin film homogeneity and exhibit isotropic electrical characteristics. Best mobilities are found in films prepared at high coating speeds with the blended semiconductor. This work demonstrates the interplay between the crystal packing and thin film morphology and uniformity and their impact on the device performance.
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Metal halide perovskites (MHPs) have unique characteristics and hold great potential for next-generation optoelectronic technologies. Recently, the importance of lattice strain in MHPs has been gaining recognition as a significant optimization parameter for device performance. While the effect of strain on the fundamental properties of MHPs has been at the center of interest, its combined effect with an external electric field has been largely overlooked. Here we perform an electric-field-dependent photoluminescence study on heteroepitaxially strained surface-guided CsPbBr3 nanowires. We reveal an unexpected strong linear dependence of the photoluminescence intensity on the alternating field amplitude, stemming from an induced internal dipole. Using low-frequency polarized-Raman spectroscopy, we reveal structural modifications in the nanowires under an external field, associated with the observed polarity. These results reflect the important interplay between strain and an external field in MHPs and offer opportunities for the design of MHP-based optoelectronic nanodevices.
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Production of multilayered microstructures composed of conducting and insulating materials is of great interest as they can be utilized as microelectronic components. Current proposed fabrication methods of these microstructures include top-down and bottom-up methods, each having their own set of drawbacks. Laser-based methods were shown to pattern various materials with micron/sub-micron resolution; however, multilayered structures demonstrating conducting/insulating/conducting properties were not yet realized. Here, we demonstrate laser printing of multilayered microstructures consisting of conducting platinum and insulating silicon oxide layers by a combination of thermally driven reactions with microbubble-assisted printing. PtCl2 dissolved in N-methyl-2-pyrrolidone (NMP) was used as a precursor to form conducting Pt layers, while tetraethyl orthosilicate dissolved in NMP formed insulating silicon oxide layers identified by Raman spectroscopy. We demonstrate control over the height of the insulating layer between â¼50 and 250 nm by varying the laser power and number of iterations. The resistivity of the silicon oxide layer at 0.5 V was 1.5 × 1011 Ωm. Other materials that we studied were found to be porous and prone to cracking, rendering them irrelevant as insulators. Finally, we show how microfluidics can enhance multilayered laser microprinting by quickly switching between precursors. The concepts presented here could provide new opportunities for simple fabrication of multilayered microelectronic devices.
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The molecule 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) is an organic semiconductor with outstanding performance in thin-film transistors. The asymmetric shape of the molecule causes an unusual phase behavior, which is a result of a distinct difference in the molecular arrangement between the head-to-head stacking of the molecules versus head-to-tail stacking. Thin films are prepared at elevated temperatures by crystallization from melt under controlled cooling rates, thermal-gradient crystallization, and bar coating at elevated temperatures. The films are investigated using X-ray diffraction techniques. Unusual peak-broadening effects are found, which cannot be explained using standard models. The modeling of the diffraction patterns with a statistic variation of the molecules reveal that a specific type of molecular disorder is responsible for the observed peak-broadening phenomena: the known head-to-head stacking within the crystalline phase is disturbed by the statistic integration of reversed (or flipped) molecules. It is found that 7-15% of the molecules are integrated in a reversed way, and these fractions are correlated with cooling rates during the sample preparation procedure. Temperature-dependent in situ experiments reveal that the defects can be healed by approaching the transition from the crystalline state to the smectic E state at a temperature of 145 °C. This work identifies and quantifies a specific crystalline defect type within thin films of an asymmetric rodlike conjugated molecule, which is caused by the crystallization kinetics.
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This work assesses the reliability of different van der Waals (vdW) methods to describe lattice vibrations of molecular crystals in the framework of density functional theory (DFT). To accomplish this task, calculated and experimental lattice phonon Raman spectra of a pool of organic molecular crystals are compared. We show that the many-body dispersion (MBD@rsSCS) van der Waals method of Ambrosetti et al. and the pairwise method of Grimme et al. (D3-BJ) outperform the other tested approaches (i.e., the D2 method of Grimme, the TS method of Tkatchenko and Scheffler, and the nonlocal functional vdW-DF-optPBE of Klimes et al.). For the worse-performing approaches the results could not even be fixed by the introduction of scaling parameters, as commonly used for high-energy intramolecular vibrations. Interestingly, when using the experimentally determined unit cell parameters, DFT calculations using the PBE functional without corrections for long-range vdW interactions provide spectra of similar accuracy as the MBD@rsSCS and D3-BJ simulations.
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We revisit the polymorphism of paracetamol by means of a micro-Raman technique, which has proved to be a powerful tool for structure recognition. Distinct lattice phonon spectra clearly identified the pure phases. Confocality enabled us to detect phase mixing between form II and either I or III on a micrometric scale in the same crystallite. Following the most recent findings on surface-mediated structures, we also investigated spin-coated films grown on glass, gold, and polystyrene substrates, confirming the selectivity of these surfaces for the metastable form III, which shows an unprecedented stability over a time span of several months. A mechanism of its transformation to phase II, via a partially ordered intermediate state, is suggested by polarized Raman measurements.
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A combined experimental and theoretical approach, consisting of lattice phonon Raman spectroscopy and density functional theory (DFT) calculations, is proposed as a tool for lattice dynamics characterization and polymorph phase identification. To illustrate the reliability of the method, the lattice phonon Raman spectra of two polymorphs of the molecule 2,7-dioctyloxy[1]benzothieno[3,2-b]benzothiophene are investigated. We show that DFT calculations of the lattice vibrations based on the known crystal structures, including many-body dispersion van der Waals (MBD-vdW) corrections, predict experimental data within an accuracy of âª5 cm-1 (âª0.6 meV). Due to the high accuracy of the simulations, they can be used to unambiguously identify different polymorphs and to characterize the nature of the lattice vibrations and their relationship to the structural properties. More generally, this work implies that DFT-MBD-vdW is a promising method to describe also other physical properties that depend on lattice dynamics like charge transport.