RESUMEN
Extensive explorations are undertaken, for the first time, of the feasibility of utilizing quantum-dot semiconductor optical amplifier intensity modulators (QD-SOA-IMs) in cost-sensitive intensity-modulation and direct-detection (IMDD) passive optical network (PON) systems based on adaptively modulated optical orthogonal frequency division multiplexing (AMOOFDM). A theoretical QD-SOA-IM model is developed, based on which optimum QD-SOA-IM operating conditions are identified together with major physical mechanism considerably affecting the system performance. It is shown that, in comparison with previously reported SOA-IMs in similar transmission systems, QD-SOA-IMs cannot only considerably improve the AMOOFDM transmission performance but also broaden the dynamic range of optimum operating conditions. In particular, for achieving signal bit rates of >30Gb/s over >60km single mode fiber (SMF), QD-SOA-IMs offer a 10dB reduction in CW optical input powers injected into the modulators. In addition, QD-SOA-IMs can also be employed to compensate the chromatic dispersion effect.
Asunto(s)
Amplificadores Electrónicos , Diseño Asistido por Computadora , Modelos Teóricos , Dispositivos Ópticos , Puntos Cuánticos , Semiconductores , Procesamiento de Señales Asistido por Computador/instrumentación , Telecomunicaciones/instrumentación , Simulación por Computador , Diseño de Equipo , Análisis de Falla de Equipo , Luz , Dispersión de RadiaciónRESUMEN
Based on a Ba(1-x)SrxTiO3 ferroelectric thin film, a discrete tunable surface mounted device (SMD) capacitor has been developed for microwave frequency applications. The proposed SMD topology has the particular advantage of inherent decoupling between the RF signal and the dc biasing voltage, necessary to tune the ferroelectric permittivity. The design and technological development of the SMD component is presented, and the synthesis of the ferroelectric thin film is summarized. Material characterization shows convenient tunability, while low dielectric losses at 10 MHz. The integration of the SMD tunable capacitor into a Planar Inverted-F Antenna has been done in order to evaluate the agility and tunability performance of the antenna.