Quantifying charge carrier localization in chemically doped semiconducting polymers.

Charge transport in semiconducting polymers ranges from localized (hopping-like) to delocalized (metal-like), yet no quantitative model exists to fully capture this transport spectrum and its dependency on charge carrier density. In this study, using an archetypal polymer-dopant system, we measure the temperature-dependent electrical conductivity, Seebeck coefficient and extent of oxidation. We then use these measurements to develop a semi-localized transport (SLoT) model, which captures both localized and delocalized transport contributions. By applying the SLoT model to published data, we demonstrate its broad utility. We are able to determine system-dependent parameters such as the maximum localization energy of the system, how this localization energy changes with doping, the amount of dopant required to achieve metal-like conductivity and the conductivity a system could have in the absence of localization effects. This proposed SLoT model improves our ability to predict and tailor electronic properties of doped semiconducting polymers.

Manipulating Band Structure through Reconstruction of Binary Metal Sulfide for High-Performance Thermoelectrics in Solution-Synthesized Nanostructured Bi13 S18 I2.

Reconstructing canonical binary compounds by inserting a third agent can significantly modify their electronic and phonon structures. Therefore, it has inspired the semiconductor communities in various fields. Introducing this paradigm will potentially revolutionize thermoelectrics as well. Using a solution synthesis, Bi2 S3 was rebuilt by adding disordered Bi and weakly bonded I. These new structural motifs and the altered crystal symmetry induce prominent changes in electrical and thermal transport, resulting in a great enhancement of the figure of merit. The as-obtained nanostructured Bi13 S18 I2 is the first non-toxic, cost-efficient, and solution-processable n-type material with z T=1.0.

Highly Porous Thermoelectric Nanocomposites with Low Thermal Conductivity and High Figure of Merit from Large-Scale Solution-Synthesized Bi2 Te2.5 Se0.5 Hollow Nanostructures.

To enhance the performance of thermoelectric materials and enable access to their widespread applications, it is beneficial yet challenging to synthesize hollow nanostructures in large quantities, with high porosity, low thermal conductivity (κ) and excellent figure of merit (z T). Herein we report a scalable (ca. 11.0 g per batch) and low-temperature colloidal processing route for Bi2 Te2.5 Se0.5 hollow nanostructures. They are sintered into porous, bulk nanocomposites (phi 10 mm×h 10 mm) with low κ (0.48 W m-1 K-1 ) and the highest z T (1.18) among state-of-the-art Bi2 Te3-x Sex materilas. Additional benefits of the unprecedented low relative density (68-77 %) are the large demand reduction of raw materials and the improved portability. This method can be adopted to fabricate other porous phase-transition and thermoelectric chalcogenide materials and will pave the way for the implementation of hollow nanostructures in other fields.