SWIR imaging using PbS QD photodiode array sensors.

We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10-3 A/W and 1.20 × 10-2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.

Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si3N4 Quantum Photonic Circuits.

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Toward this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/Si3N4 photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si3N4 waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of postselected indistinguishable photons. This indicates a promising path toward significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

Direct Transfer of Light's Orbital Angular Momentum onto a Nonresonantly Excited Polariton Superfluid.

Recently, exciton polaritons in a semiconductor microcavity were found to condense into a coherent ground state much like a Bose-Einstein condensate and a superfluid. They have become a unique testbed for generating and manipulating quantum vortices in a driven-dissipative superfluid. Here, we generate an exciton-polariton condensate with a nonresonant Laguerre-Gaussian optical beam and verify the direct transfer of light's orbital angular momentum to an exciton-polariton quantum fluid. Quantized vortices are found in spite of the large energy relaxation involved in nonresonant pumping. We identified phase singularity, density distribution, and energy eigenstates for the vortex states. Our observations confirm that nonresonant optical Laguerre-Gaussian beam can be used to manipulate chirality, topological charge, and stability of the nonequilibrium quantum fluid. These vortices are quite robust, only sensitive to the orbital angular momentum of light and not other parameters such as energy, intensity, size, or shape of the pump beam. Therefore, optical information can be transferred between the photon and exciton-polariton with ease and the technique is potentially useful to form the controllable network of multiple topological charges even in the presence of spectral randomness in a solid state system.

Magnetic-field-controlled reconfigurable semiconductor logic.

Logic devices based on magnetism show promise for increasing computational efficiency while decreasing consumed power. They offer zero quiescent power and yet combine novel functions such as programmable logic operation and non-volatile built-in memory. However, practical efforts to adapt a magnetic device to logic suffer from a low signal-to-noise ratio and other performance attributes that are not adequate for logic gates. Rather than exploiting magnetoresistive effects that result from spin-dependent transport of carriers, we have approached the development of a magnetic logic device in a different way: we use the phenomenon of large magnetoresistance found in non-magnetic semiconductors in high electric fields. Here we report a device showing a strong diode characteristic that is highly sensitive to both the sign and the magnitude of an external magnetic field, offering a reversible change between two different characteristic states by the application of a magnetic field. This feature results from magnetic control of carrier generation and recombination in an InSb p-n bilayer channel. Simple circuits combining such elementary devices are fabricated and tested, and Boolean logic functions including AND, OR, NAND and NOR are performed. They are programmed dynamically by external electric or magnetic signals, demonstrating magnetic-field-controlled semiconductor reconfigurable logic at room temperature. This magnetic technology permits a new kind of spintronic device, characterized as a current switch rather than a voltage switch, and provides a simple and compact platform for non-volatile reconfigurable logic devices.

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g(2)(0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Generalized Scheme for High Performing Photodetectors with a p-Type 2D Channel Layer and n-Type Nanoparticles.

A generalized scheme for the fabrication of high performance photodetectors consisting of a p-type channel material and n-type nanoparticles is proposed. The high performance of the proposed hybrid photodetector is achieved through enhanced photoabsorption and the photocurrent gain arising from its effective charge transfer mechanism. In this paper, the realization of this design is presented in a hybrid photodetector consisting of 2D p-type black phosphorus (BP) and n-type molybdenum disulfide nanoparticles (MoS2 NPs), and it is demonstrated that it exhibits enhanced photoresponsivity and detectivity compared to pristine BP photodetectors. It is found that the performance of hybrid photodetector depends on the density of NPs on BP layer and that the response time can be reduced with increasing density of MoS2 NPs. The rising and falling times of this photodetector are smaller than those of BP photodetectors without NPs. This proposed scheme is expected to work equally well for a photodetector with an n-type channel material and p-type nanoparticles.

GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications.

We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.

Quantum cascade lasers with Y2O3 insulation layer operating at 8.1 µm.

SiO2 is a commonly used insulation layer for QCLs but has high absorption peak around 8 to 10 µm. Instead of SiO2, we used Y2O3 as an insulation layer for DC-QCL and successfully demonstrated lasing operation at the wavelength around 8.1 µm. We also showed 2D numerical analysis on the absorption coefficient of our DC-QCL structure with various parameters such as insulating materials, waveguide width, and mesa angle.

Exciton Dipole-Dipole Interaction in a Single Coupled-Quantum-Dot Structure via Polarized Excitation.

We find that the exciton dipole-dipole interaction in a single laterally coupled GaAs/AlGaAs quantum dot structure can be controlled by the linear polarization of a nonresonant optical excitation. When the excitation intensity is increased with the linearly polarized light parallel to the lateral coupling direction [11̅0], excitons (X1 and X2) and local biexcitons (X1X1 and X2X2) of the two separate quantum dots (QD1 and QD2) show a redshift along with coupled biexcitons (X1X2), while neither coupled biexcitons nor a redshift are observed when the polarization of the exciting beam is perpendicular to the coupling direction. The polarization dependence and the redshift are attributed to an optical nonlinearity in the exciton Förster resonant energy transfer interaction, whereby exciton population transfer between the two quantum dots also becomes significant with increasing excitation intensity. We have further distinguished coupled biexcitons from local biexcitons by their large diamagnetic coefficient.

Alternative Patterning Process for Realization of Large-Area, Full-Color, Active Quantum Dot Display.

Although various colloidal quantum dot (QD) coating and patterning techniques have been developed to meet the demands in optoelectronic applications over the past years, each of the previously demonstrated methods has one or more limitations and trade-offs in forming multicolor, high-resolution, or large-area patterns of QDs. In this study, we present an alternative QD patterning technique using conventional photolithography combined with charge-assisted layer-by-layer (LbL) assembly to solve the trade-offs of the traditional patterning processes. From our demonstrations, we show repeatable QD patterning process that allows multicolor QD patterns in both large-area and microscale. Also, we show that the QD patterns are robust against additional photolithography processes and that the thickness of the QD patterns can be controlled at each position. To validate that this process can be applied to actual device applications as an active material, we have fabricated inverted, differently colored, active QD light-emitting device (QD-LED) on a pixelated substrate, which achieved maximum electroluminescence intensity of 23 770 cd/m2, and discussed the results. From our findings, we believe that our process provides a solution to achieving both high-resolution and large-scale QD pattern applicable to not only display, but also to practical photonic device research and development.

InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off.

We report fabrication and optical characteristics of an InGaP/GaAs heterojunction phototransistor (HPT) transferred to a Si substrate by a metal wafer bonding (MWB) and epitaxial lift-off (ELO) process at room temperature. An intermediate Pt/Au double layer between the HPT layer and Si provided a very smooth surface by which to achieve the MWB, and excellent durability against the acid solution during the ELO process. These processes were observed using scanning electron microscope (SEM) and atomic force microscopy (AFM). While the results on a low temperature photoluminescence (LTPL) signal and high resolution x-ray diffraction (HRXRD) rocking curve of the bonded device film implied a defect-free bonding, a very low collector dark current of the fabricated HPT was observed. The optical performance of a bonded InGaP/GaAs HPT on Si, operating at 635 nm wavelength is also investigated.

Correlated visible-light absorption and intrinsic magnetism of SrTiO3 due to oxygen deficiency: bulk or surface effect?

The visible-light absorption and luminescence of wide band gap (3.25 eV) strontium titanate (SrTiO3) are well-known, in many cases, to originate from the existence of natural oxygen deficiency in the material. In this study based on density functional theory (DFT) calculations, we provide, to the best of our knowledge, the first report indicating that oxygen vacancies in the bulk and on the surfaces of SrTiO3 (STO) play different roles in the optical and magnetic properties. We found that the doubly charged state of oxygen vacancy (VO(2+)) is dominant in bulk SrTiO3 and does not contribute to the sub-band gap photoexcitation or intrinsic magnetism of STO. Neutral oxygen vacancies (VO(0)) on (001) surfaces terminated with both TiO2 and SrO layers induce magnetic moments, which are dependent on the charged state of VO. The calculated absorption spectra for the (001) surfaces exhibit mid-infrared absorption (<0.5 eV) and sub-band gap absorption (2.5-3.1 eV) due to oxygen vacancies. In particular, VO(0) on the TiO2-terminated surface has a relatively low formation energy and magnetic moments, which can explain the recently observed spin-dependent photon absorptions of STO in a magnetic circular dichroism measurement [Rice, W. D.; et al. Nat. Mater.13, 481, 2014].

Electron and phonon coupling dynamics in low-gap semiconductor: quantum versus classical scale.

We have studied the characteristics of longitudinal-optical-phonon-plasmon coupled (LOPC) mode by using the ultrashort pulsed laser with 45 THz bandwidth as a function of thickness in InAs epilayers, ranging from 10 to 900 nm. We have observed the LOPC modes split into the upper (L(+) mode) and the lower (L(-) mode) branches only in the classical scale, but the longitudinal-optical (LO) phonon peak was persistently observed. The shorter decay time of the plasmon-like L(+) modes rather than the phonon-like L(-) modes should be associated with carrier-carrier scattering which is further considered with diffusion properties in the low-gap semiconductors. This result leads to that the absence of the LOPC modes in a scale less than exciton Bohr radius manifests the role of electron diffusion rather than the carrier screening via drift motion in surface depletion region.

Propagation effects of THz waves in InAs-based heterostructures.

We have investigated THz radiation characteristics along different directions, either reflective or along lateral by using InAs-based heterostructures. Firstly, we demonstrate the phase shift with InAs layer thickness, revealing the change of dominant THz wave generation mechanism along both directions. Along the lateral direction, the time-domain signals in thin InAs epilayers showed an abrupt phase and amplitude change at certain time delays which suggest the interference between two rays at the photoconductive switch. This behavior was further substantiated by the multiple cavity modes in Fourier-transformed spectra and by the amplitude variation with excitation spot displacement.

Directional terahertz emission from corrugated InAs structures.

The terahertz (THz) radiation from transient dipoles, formed by distinct diffusion coefficients between oppositely charged carriers as often observed in low band gap semiconductors, propagates with an anisotropic amplitude distribution perpendicular to the dipole axis along the diffusive motion. By directionally adjusting the electronic diffusion, we conceptualize groove-patterned THz emitters based on (100) InAs thin films and demonstrate the unidirectional radiation. Line-of-sight emission along the surface-normal direction is greatly enhanced in a distributed asymmetric trapezoid with its period similar to the electronic diffusion length of InAs. This directional enhancement is in clear contrast to the constant emission amplitude along the lateral direction, regardless of pattern scale, which manifests the role of groove patterns as microscale reflectors in laterally corrugating the carrier density. In contrast to the rather limited nonlinearity in (100) plane, the azimuthal angle dependence of the THz field amplitude in corrugated samples shows a combined effect of diffusive transport and second-order nonlinearity, whose compositional contributions varies in different structures.

Single Quantum Dot Selection and Tailor-Made Photonic Device Integration using a Nanoscale-Focus Pinspot.

Among the diverse platforms of quantum light sources, epitaxially grown semiconductor quantum dots (QDs) are one of the most attractive workhorses for realizing quantum photonic technologies owing to their outstanding brightness and scalability. However, the spatial and spectral randomness of most QDs severely hinders the construction of large-scale photonic platforms. In this work, a methodology is presented to deterministically integrate single QDs with tailor-made photonic structures. A nondestructive luminescence picking method termed as nanoscale-focus pinspot (NFP) is applied using helium-ion microscopy to reduce the luminous QD density while retaining the surrounding medium. A single QD emission is only extracted out of the high-density ensemble QDs. Then the tailor-made photonic structure of a circular Bragg reflector (CBR) is designed and deterministically integrated with the selected QD. Given that the microscopy can image with nanoscale resolution and apply NFP in situ, photonic devices can be deterministically fabricated on target QDs. The extraction efficiency of the NFP-selected QD emission is improved by 25 times after the CBR integration. Since the NFP method only controls the luminescence without destroying the medium, it is applicable to various photonic structures such as photonic waveguides or photonic crystal cavities regardless of materials.

Polarization shaping of few-cycle terahertz waves.

We present a polarization shaping technique for few-cycle terahertz (THz) waves. For this, N femtosecond laser pulses are generated from a devised diffractive optical system made of as-many glass wedges, which then simultaneously illuminate on various angular positions of a sub-wavelength circular pattern of an indium arsenide thin film, to produce a THz wave of tailor-made polarization state given as a superposition of N linearly-polarized THz pulses. By properly arranging the orientation and thickness of the glass wedges, which determine the polarization and its timing of the constituent THz pulses, we successfully generate THz waves of various unconventional polarization states, such as polarization rotation and alternation between circular polarization states.

In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmetric quantum well.

The Photoluminescence spectra (PL), their temperature and power dependence were investigated for the ground state in InAs quantum dots (QDs) embedded in InGaAs asymmetric quantum well (Asym. QW). In-atom segregation is well known phenomena in such structures, which result in altering the inter-atomic distances; as a consequence the thermo-dynamical parameters change as well, namely Debye temperature. The bigger value of Debye temperature for the studied sample with respect to the corresponding bulk value is attributed to In/Ga inter-diffusion during growth. The inter-diffusion process causes non-radiative defects in the sample. As a consequence, rapid decrease in the QDs integrated emission intensity as the temperature increases was occurred.

Temperature-Dependent Exciton Dynamics in a Single GaAs Quantum Ring and a Quantum Dot.

Micro-photoluminescence was observed while increasing the excitation power in a single GaAs quantum ring (QR) at 4 K. Fine structures at the energy levels of the ground (N = 1) and excited (N = 2) state excitons exhibited a blue shift when excitation power increased. The excited state exciton had a strong polarization dependence that stemmed from the asymmetric localized state. According to temperature-dependence measurements, strong exciton-phonon interaction (48 meV) was observed from an excited exciton state in comparison with the weak exciton-phonon interaction (27 meV) from the ground exciton state, resulting from enhanced confinement in the excited exciton state. In addition, higher activation energy (by 20 meV) was observed for the confined electrons in a single GaAs QR, where the confinement effect was enhanced by the asymmetric ring structure.

Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing.

A charge trap device based on field-effect transistors (FET) is a promising candidate for artificial synapses because of its high reliability and mature fabrication technology. However, conventional MOSFET-based charge trap synapses require a strong stimulus for synaptic update because of their inefficient hot-carrier injection into the charge trapping layer, consequently causing a slow speed operation and large power consumption. Here, we propose a highly efficient charge trap synapse using III-V materials-based tunnel field-effect transistor (TFET). Our synaptic TFETs present superior subthreshold swing and improved charge trapping ability utilizing both carriers as charge trapping sources: hot holes created by impact ionization in the narrow bandgap InGaAs after being provided from the p+-source, and band-to-band tunneling hot electrons (BBHEs) generated at the abrupt p+n junctions in the TFETs. Thanks to these advances, our devices achieved outstanding efficiency in synaptic characteristics with a 5750 times faster synaptic update speed and 51 times lower sub-fJ/um2 energy consumption per single synaptic update in comparison to the MOSFET-based synapse. An artificial neural network (ANN) simulation also confirmed a high recognition accuracy of handwritten digits up to ∼90% in a multilayer perceptron neural network based on our synaptic devices.