Intrinsic Magnetic (EuIn)As Nanowire Shells with a Unique Crystal Structure.

In the pursuit of magneto-electronic systems nonstoichiometric magnetic elements commonly introduce disorder and enhance magnetic scattering. We demonstrate the growth of (EuIn)As shells, with a unique crystal structure comprised of a dense net of Eu inversion planes, over InAs and InAs1-xSbx core nanowires. This is imaged with atomic and elemental resolution which reveal a prismatic configuration of the Eu planes. The results are supported by molecular dynamics simulations. Local magnetic and susceptibility mappings show magnetic response in all nanowires, while a subset bearing a DC signal points to ferromagnetic order. These provide a mechanism for enhancing Zeeman responses, operational at zero applied magnetic field. Such properties suggest that the obtained structures can serve as a preferred platform for time-reversal symmetry broken one-dimensional states including intrinsic topological superconductivity.

Sub-Band Spectrum Engineering via Structural Order in Tapered Nanowires.

The cross-sectional dimensions of nanowires set the quantization conditions for the electronic subbands they host. These can be used as a platform to realize one-dimesional topological superconductivity. Here we develop a protocol that forces such nanowires to kink and change their growth direction. Consequently, a thin rectangular nanoplate is formed, which gradually converges into a very thin square tip. We characterize the resulting tapered nanowires structurally and spectroscopically by scanning and transmission electron microscopy and scanning tunneling microscopy and spectroscopy and model their growth. A unique structure composed of ordered rows of atoms on the (110) facet of the nanoflag is further revealed by atomically resolved topography and modeled by simulations. We discuss possible advantages tapered InAs nanowires offer for Majorana zero-mode realization and manipulation.

Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires.

We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd3As2 nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire. In these regimes, the device shows quantum dot behavior, whereas the device exhibits conductance plateaus in the n-n regime at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.

Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination.

The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

Wurtzite ZnTe Nanotrees and Nanowires on Fluorine-Doped Tin Oxide Glass Substrates.

ZnTe nanotrees and nanowires were grown on fluorine-doped tin oxide glass by physical vapor transport. Sn from a fluorine-doped tin oxide layer catalyzed the growth at a growth temperature of 320 °C. Both the stem and branch nanowires grew along ⟨0001⟩ in the rarely observed wurtzite structure. SnTe nanostructures were formed in the liquid catalyst and simultaneously ZnTe nanowire grew under Te-limited conditions, which made the formation of the wurtzite structure energetically favorable. Through polarization-dependent and power-dependent microphotoluminescence measurements from individual wurtzite nanowires at room temperature, we could determine the so far unknown fundamental bandgap of wurtzite ZnTe, which was 2.297 eV and thus 37 meV higher than that of zinc-blend ZnTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands is estimated to be 69 meV.

Fletching-shaped Bi4Te3­ZnTe heterostructure nanowires.

We investigated Bi(4)Te(3)-ZnTe axial heterostructure nanowires grown by physical vapor transport at the substrate temperature of 450 °C, utilizing ZnTe as the source and Bi(2)Te(3) as the catalyst. The temperatures of the source and catalyst materials were individually controlled by separating the source and catalyst boats. The axial heterostructure nanowires consisted of ZnTe and Bi(4)Te(3) segments. The Bi(4)Te(3) segment had an interesting fletching shape with three wings surrounded by a ZnO shell. A systematic redshift in the nanowire's photoluminescence was observed as the excitation laser spot was moved from the heterojunction toward the root of the ZnTe segment, attributed to the formation of deep defect states under the Te-rich environment that resulted from using Bi(2)Te(3) as the catalyst instead of Bi.

Topotaxial mutual-exchange growth of magnetic Zintl Eu3In2As4 nanowires with axion insulator classification.

Due to quasi-one-dimensional confinement, nanowires possess unique electronic properties, which can promote specific device architectures. However, nanowire growth presents paramount challenges, limiting the accessible crystal structures and elemental compositions. Here we demonstrate solid-state topotactic exchange that converts wurtzite InAs nanowires into Zintl Eu3In2As4. Molecular-beam-epitaxy-based in situ evaporation of Eu and As onto InAs nanowires results in the mutual exchange of Eu from the shell and In from the core. Therefore, a single-phase Eu3In2As4 shell grows, which gradually consumes the InAs core. The mutual exchange is supported by the substructure of the As matrix, which is similar across the wurtzite InAs and Zintl Eu3In2As4 and therefore is topotactic. The Eu3In2As4 nanowires undergo an antiferromagnetic transition at a Néel temperature of ~6.5 K. Ab initio calculations confirm the antiferromagnetic ground state and classify Eu3In2As4 as a C2T axion insulator, hosting both chiral hinge modes and unpinned Dirac surface states. The topotactic mutual-exchange nanowire growth will, thus, enable the exploration of intricate magneto-topological states in Eu3In2As4 and potentially in other exotic compounds.

Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots.

We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 µm lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.

CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method.

The two-dimensional heterostructure nanobelts with a central CdSe region and lateral CdS structures are synthesized by a two-step physical vapor transport method. The large growth rate difference between lateral CdS structures on both +/- (0001) sides of the CdSe region is found. The growth anisotropy is discussed in terms of the polar nature of the side +/- (0001) surfaces of CdSe. High-resolution transmission electron microscopy reveals the CdSe central region covered with non-uniform CdS layer/islands. From micro-photoluminescence measurements, a systematic blueshift of emission energy from the central CdSe region in accordance with the increase of lateral CdS growth temperature is observed. This result indicates that the intermixing rate in the CdSe region with CdS increases with the increase of lateral CdS growth temperature. In conventional CdSSe ternary nanostructures, morphology and emission wavelength were correlated parameters. However, the morphology and emission wavelength are independently controllable in the CdS/CdSe lateral heterostructure nanobelts. This structure is attractive for applications in visible optoelectronic devices.

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 degrees C to circumvent the oxidation problem. By using a thin Ge buffer layer with root-mean-square roughness of approximately 2 nm, the yield of vertically oriented Ge nanowires is as high as 96.3%. This yield is comparable to that of homoepitaxial Ge nanowires. Furthermore, branched Ge nanowires could be successfully grown on these vertically oriented Ge nanowires by a secondary seeding technique. Since the buffer layers are grown under moderate conditions without any high temperature processing steps, this method has a wide process window highly suitable for Si-based microelectronics.

The growth and optical properties of CdSSe nanosheets.

We have investigated the growth of ternary CdSSe nanostructures by physical vapor transport, specifically aiming at the synthesis of CdSSe nanosheets. CdSSe nanostructures with various S mole fractions are grown at growth temperatures less than 800 degrees C and photoluminescence from these nanostructures covers the entire visible spectral range. Morphological evolution from nanowires to nanosheets is observed as increasing growth temperatures due to the change of relative dominance in the growth mechanism from vapor-liquid-solid to vapor-solid. Nanosheets whose widths extend several tens of micrometers are successfully synthesized. However, nanosheets show a strong suppression effect of S incorporation when the growth is dominated by the vapor-solid mechanism. A micro-photoluminescence study shows high optical quality of individual CdSSe nanostructures with polarization anisotropy ratios rho ~ 0.1. In addition, lateral heterostructure CdS/CdSe nanosheets are successfully synthesized by two step growth. Strong red and green emissions are observed by selective laser excitations focusing at the center and edge parts of these heterostructure nanosheets, respectively. These heterostructure CdS/CdSe nanosheets may be useful for multicolor light emitting devices.

Vertically standing Ge nanowires on GaAs(110) substrates.

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380 °C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the [Formula: see text] direction. Using this unique property, vertical [Formula: see text] Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the [Formula: see text] directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.