Ultralow contact resistance between semimetal and monolayer semiconductors.

Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered1,2. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic devices1,3. However, owing to metal-induced gap states (MIGS)4-7, energy barriers at the metal-semiconductor interface-which fundamentally lead to high contact resistance and poor current-delivery capability-have constrained the improvement of two-dimensional semiconductor transistors so far2,8,9. Here we report ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where the MIGS are sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a contact resistance of 123 ohm micrometres and an on-state current density of 1,135 microamps per micrometre on monolayer MoS2; these two values are, to the best of our knowledge, the lowest and highest yet recorded, respectively. We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS2, WS2 and WSe2. Our reported contact resistances are a substantial improvement for two-dimensional semiconductors, and approach the quantum limit. This technology unveils the potential of high-performance monolayer transistors that are on par with state-of-the-art three-dimensional semiconductors, enabling further device downscaling and extending Moore's law.

Revealing Variable Dependences in Hexagonal Boron Nitride Synthesis via Machine Learning.

Wafer-scale monolayer two-dimensional (2D) materials have been realized by epitaxial chemical vapor deposition (CVD) in recent years. To scale up the synthesis of 2D materials, a systematic analysis of how the growth dynamics depend on the growth parameters is essential to unravel its mechanisms. However, the studies of CVD-grown 2D materials mostly adopted the control variate method and considered each parameter as an independent variable, which is not comprehensive for 2D materials growth optimization. Herein, we synthesized a representative 2D material, monolayer hexagonal boron nitride (hBN), on single-crystalline Cu (111) by epitaxial chemical vapor deposition and varied the growth parameters to regulate the hBN domain sizes. Furthermore, we explored the correlation between two growth parameters and provided the growth windows for large flake sizes by the Gaussian process. This new analysis approach based on machine learning provides a more comprehensive understanding of the growth mechanism for 2D materials.

A relatively wide-bandgap and air-stable donor polymer for fabrication of efficient semitransparent and tandem organic photovoltaics.

Organic photovoltaics (OPVs) have attracted tremendous attention in the field of thin-film solar cells due to their wide range of applications, especially for semitransparent devices. Here, we synthesize a dithiaindacenone-thiophene-benzothiadiazole-thiophene alternating donor copolymer named poly{[2,7-(5,5-didecyl-5H-1,8-dithia-as-indacenone)]-alt-[5,5-(5',6'-dioctyloxy-4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)]} (PDTIDTBT), which shows a relatively wide bandgap of 1.82 eV, good mobility, and high transmittance and ambient stability. In this work, we fabricate an OPV device using monolayer graphene as top electrode. Due to the stability of PDTIDTBT in air and water, we use a wet transfer technique for graphene to fabricate semitransparent OPVs. We demonstrate OPVs based on the PDTIDTBT:Phenyl-C61/71-butyric acid methyl ester (PCBM) blend with maximum power conversion efficiencies (PCEs) of 6.1 and 4.75% using silver and graphene top electrodes, respectively. Our graphene-based device shows a high average visible transmittance (AVT) of 55%, indicating the potential of PDTIDTBT for window application and tandem devices. Therefore, we also demonstrate tandem devices using the PDTIDTBT:Phenyl-C61-butyric acid methyl ester (PC60BM) blend in both series and parallel connections with average PCEs of 7.3 and 7.95%, respectively. We also achieve a good average PCE of 8.26% with an average open circuit voltage (Voc) of 1.79 V for 2-terminal tandem OPVs using this blend. Based on tandem design, an OPV with PCE of 6.45% and AVT of 38% is demonstrated. Moreover, our devices show improved shelf life and ultraviolet (UV) stability (using CdSe/ZnS core shell quantum dots [QDs]) in ambient with 45% relative humidity.

Elucidation of the role of guanidinium incorporation in single-crystalline MAPbI3 perovskite on ion migration and activation energy.

Ion migration plays a significant role in the overall stability and power conversion efficiency of perovskite solar cells (PSCs). This process was found to be influenced by the compositional engineering of the A-site cation in the perovskite crystal structure. However, the effect of partial A-site cation substitution in a methylammonium lead iodide (MAPbI3) perovskite on the ion migration process and its activation energy is not fully understood. Here we study the effect of a guanidinium (GUA) cation on the ion transport dynamics in the single crystalline GUAxMA1-xPbI3 perovskite composition using temperature-dependent electrochemical impedance spectroscopy (EIS). We find that the small substitution of MA with GUA decreases the activation energy for iodide ion migration in comparison to pristine MAPbI3. The presence of a large GUA cation in the 3D perovskite structure induces lattice enlargement, which perturbs the atomic interactions within the perovskite lattice. Consequently, the GUAxMA1-xPbI3 crystal exhibits a higher degree of hysteresis during current-voltage (J-V) measurements than the single-crystalline MAPbI3 counterpart. Our results provide the fundamental understanding of hysteresis, which is commonly observed in GUA-based PSCs and a general protocol for in-depth electrical characterization of perovskite single crystals.

Changes in the Electrical Characteristics of Perovskite Solar Cells with Aging Time.

The last decade has witnessed the impressive progress of perovskite solar cells (PSCs), with power conversion efficiency exceeding 25%. Nevertheless, the unsatisfactory device stability and current-voltage hysteresis normally observed with most PSCs under operational conditions are bottlenecks that hamper their further commercialization. Understanding the electrical characteristics of the device during the aging process is important for the design and development of effective strategies for the fabrication of stable PSCs. Herein, electrochemical impedance spectroscopical (IS) analyses are used to study the time-dependent electrical characteristics of PSC. We demonstrate that both the dark and light ideality factors are sensitive to aging time, indicating the dominant existence of trap-assisted recombination in the investigated device. By analyzing the capacitance versus frequency responses, we show that the low-frequency capacitance increases with increasing aging time due to the accumulation of charges or ions at the interfaces. These results are correlated with the observed hysteresis during the current-voltage measurement and provide an in-depth understanding of the degradation mechanism of PSCs with aging time.

Light Management in Organic Photovoltaics Processed in Ambient Conditions Using ZnO Nanowire and Antireflection Layer with Nanocone Array.

Low carrier mobility and lifetime in semiconductor polymers are some of the main challenges facing the field of organic photovoltaics (OPV) in the quest for efficient devices with high current density. Finding novel strategies such as device structure engineering is a key pathway toward addressing this issue. In this work, the light absorption and carrier collection of OPV devices are improved by employment of ZnO nanowire (NW) arrays with an optimum NW length (50 nm) and antireflection (AR) film with nanocone structure. The optical characterization results show that ZnO NW increases the transmittance of the electron transporting layer as well as the absorption of the polymer blend. Moreover, the as-deposited polymer blend on the ZnO NW array shows better charge transfer as compared to the planar sample. By employing PC70BM:PV2000 as a promising air-stable active-layer, power conversion efficiencies of 9.8% and 10.1% are achieved for NW devices without and with an AR film, indicating 22.5% and 26.2% enhancement in PCE as compared to that of planar device. Moreover, it is shown that the AR film enhances the water-repellent ability of the OPV device.

Mesoscopic Oxide Double Layer as Electron Specific Contact for Highly Efficient and UV Stable Perovskite Photovoltaics.

The solar to electric power conversion efficiency (PCE) of perovskite solar cells (PSCs) has recently reached 22.7%, exceeding that of competing thin film photovoltaics and the market leader polycrystalline silicon. Further augmentation of the PCE toward the Shockley-Queisser limit of 33.5% warrants suppression of radiationless carrier recombination by judicious engineering of the interface between the light harvesting perovskite and the charge carrier extraction layers. Here, we introduce a mesoscopic oxide double layer as electron selective contact consisting of a scaffold of TiO2 nanoparticles covered by a thin film of SnO2, either in amorphous (a-SnO2), crystalline (c-SnO2), or nanocrystalline (quantum dot) form (SnO2-NC). We find that the band gap of a-SnO2 is larger than that of the crystalline (tetragonal) polymorph leading to a corresponding lift in its conduction band edge energy which aligns it perfectly with the conduction band edge of both the triple cation perovskite and the TiO2 scaffold. This enables very fast electron extraction from the light perovskite, suppressing the notorious hysteresis in the current-voltage ( J-V) curves and retarding nonradiative charge carrier recombination. As a result, we gain a remarkable 170 mV in open circuit photovoltage ( V oc) by replacing the crystalline SnO2 by an amorphous phase. Because of the quantum size effect, the band gap of our SnO2-NC particles is larger than that of bulk SnO2 causing their conduction band edge to shift also to a higher energy thereby increasing the V oc. However, for SnO2-NC there remains a barrier for electron injection into the TiO2 scaffold decreasing the fill factor of the device and lowering the PCE. Introducing the a-SnO2 coated mp-TiO2 scaffold as electron extraction layer not only increases the V oc and PEC of the solar cells but also render them resistant to UV light which forebodes well for outdoor deployment of these new PSC architectures.

Nanotextured Spikes of α-Fe2O3/NiFe2O4 Composite for Efficient Photoelectrochemical Oxidation of Water.

We demonstrate for the first time the application of p-NiFe2O4/n-Fe2O3 composite thin films as anode materials for light-assisted electrolysis of water. The p-NiFe2O4/n-Fe2O3 composite thin films were deposited on planar fluorinated tin oxide (FTO)-coated glass as well as on 3D array of nanospike (NSP) substrates. The effect of substrate (planar FTO and 3D-NSP) and percentage change of each component (i.e., NiFe2O4 and Fe2O3) of composite was studied on photoelectrochemical (PEC) water oxidation reaction. This work also includes the performance comparison of p-NiFe2O4/n-Fe2O3 composite (planar and NSP) devices with pure hematite for PEC water oxidation. Overall, the nanostructured p-NiFe2O4/n-Fe2O3 device with equal molar 1:1 ratio of NiFe2O4 and Fe2O3 was found to be highly efficient for PEC water oxidation as compared with pure hematite, 1:2 and 1:3 molar ratios of composite. The photocurrent density of 1:1 composite thin film on planar substrate was equal to 1.07 mA/cm2 at 1.23 VRHE, which was 1.7 times higher current density as compared with pure hematite device (0.63 mA/cm2 at 1.23 VRHE). The performance of p-NiFe2O4/n-Fe2O3 composites in PEC water oxidation was further enhanced by their deposition over 3D-NSP substrate. The highest photocurrent density of 2.1 mA/cm2 at 1.23 VRHE was obtained for the 1:1 molar ratio p-NiFe2O4/n-Fe2O3 composite on NSP (NF1-NSP), which was 3.3 times more photocurrent density than pure hematite. The measured applied bias photon-to-current efficiency (ABPE) value of NF1-NSP (0.206%) was found to be 1.87 times higher than that of NF1-P (0.11%) and 4.7 times higher than that of pure hematite deposited on FTO-coated glass (0.044%). The higher PEC water oxidation activity of p-NiFe2O4/n-Fe2O3 composite thin film as compared with pure hematite is attributed to the Z-path scheme and better separation of electrons and holes. The increased surface area and greater light absorption capabilities of 3D-NSP devices result in further improvement in catalytic activities.

All Inorganic Cesium Lead Iodide Perovskite Nanowires with Stabilized Cubic Phase at Room Temperature and Nanowire Array-Based Photodetectors.

Alluring optical and electronic properties have made organometallic halide perovskites attractive candidates for optoelectronics. Among all perovskite materials, inorganic CsPbX3 (X is halide) in black cubic phase has triggered enormous attention recently owing to its comparable photovoltaic performance and high stability as compared to organic and hybrid perovskites. However, cubic phase stabilization at room temperature for CsPbI3 still survives as a challenge. Herein we report all inorganic three-dimensional vertical CsPbI3 perovskite nanowires (NWs) synthesized inside anodic alumina membrane (AAM) by chemical vapor deposition (CVD) method. It was discovered that the as-grown NWs have stable cubic phase at room temperature. This significant improvement on phase stability can be attributed to the effective encapsulation of NWs by AAM and large specific area of these NWs. To demonstrate device application of these NWs, photodetectors based on these high density CsPbI3 NWs were fabricated demonstrating decent performance. Our discovery suggests a novel and practical approach to stabilize the cubic phase of CsPbI3 material, which will have broad applications for optoelectronics in the visible wavelength range.

Lead-Free Perovskite Nanowire Array Photodetectors with Drastically Improved Stability in Nanoengineering Templates.

Organometal halide perovskite materials have triggered enormous attention for a wide range of high-performance optoelectronic devices. However, their stability and toxicity are major bottleneck challenges for practical applications. Substituting toxic heavy metal, that is, lead (Pb), with other environmentally benign elements, for example, tin (Sn), could be a potential solution to address the toxicity issue. Nevertheless, even worse stability of Sn-based perovskite material than Pb-based perovskite poses a great challenge for further device fabrication. In this work, for the first time, three-dimensional CH3NH3SnI3 perovskite nanowire arrays were fabricated in nanoengineering templates, which can address nanowire integration and stability issues at the same time. Also, nanowire photodetectors have been fabricated and characterized. Intriguingly, it was discovered that as the nanowires are embedded in mechanically and chemically robust templates, the material decay process has been dramatically slowed down by up to 840 times, as compared with a planar thin film. This significant improvement on stability can be attributed to the effective blockage of diffusion of water and oxygen molecules within the templates. These results clearly demonstrate a new and alternative strategy to address the stability issue of perovskite materials, which is the major roadblock for high-performance optoelectronics.

Progress and Design Concerns of Nanostructured Solar Energy Harvesting Devices.

Integrating devices with nanostructures is considered a promising strategy to improve the performance of solar energy harvesting devices such as photovoltaic (PV) devices and photo-electrochemical (PEC) solar water splitting devices. Extensive efforts have been exerted to improve the power conversion efficiencies (PCE) of such devices by utilizing novel nanostructures to revolutionize device structural designs. The thicknesses of light absorber and material consumption can be substantially reduced because of light trapping with nanostructures. Meanwhile, the utilization of nanostructures can also result in more effective carrier collection by shortening the photogenerated carrier collection path length. Nevertheless, performance optimization of nanostructured solar energy harvesting devices requires a rational design of various aspects of the nanostructures, such as their shape, aspect ratio, periodicity, etc. Without this, the utilization of nanostructures can lead to compromised device performance as the incorporation of these structures can result in defects and additional carrier recombination. The design guidelines of solar energy harvesting devices are summarized, including thin film non-uniformity on nanostructures, surface recombination, parasitic absorption, and the importance of uniform distribution of photo-generated carriers. A systematic view of the design concerns will assist better understanding of device physics and benefit the fabrication of high performance devices in the future.

Surface passivation of lead sulfide nanocrystals with low electron affinity metals: photoluminescence and photovoltaic performance.

During the last decade, solution-processed colloidal quantum dots (CQDs) have attracted significant attention for low-cost fabrication of optoelectronic devices. In this study, lead sulfide (PbS) CQDs were synthesized via the hot injection method and the effect of doping elements with low electron affinity, including cadmium, calcium and zinc, on the passivation of trap states was investigated. A red-shift in the luminescence emission was observed by doping through passivation of lead dangling bonds. Time-resolved photoluminescence measurements showed that the lifetime of charged carriers was significantly enhanced by cadmium doping (∼80%) which is quite noticeable compared with calcium- and zinc-doped nanocrystals. External quantum efficiency measurements on thin solid films (∼300 nm) prepared by spin coating supported improved lifetime of carriers through passivation of mid-gap trap states. In order to show the potential application of the doping process, bulk heterojunction CQD solar cells were fabricated. It was found that the power conversion efficiency (PCE) was improved up to ∼40%; the highest improvement was observed with the Cd treatment. Finally, density functional theory (DFT) and electrochemical impedance spectroscopy (EIS) were employed to study the effect of doping on the density of states. The results showed that doping with low electron affinity metals effectively reduced the deep trap states of PbS QDs.

Hybrid zinc oxide/graphene electrodes for depleted heterojunction colloidal quantum-dot solar cells.

Recently, hybrid nanocomposites consisting of graphene/nanomaterial heterostructures have emerged as promising candidates for the fabrication of optoelectronic devices. In this work, we have employed a facile and in situ solution-based process to prepare zinc oxide/graphene quantum dots (ZnO/G QDs) in a hybrid structure. The prepared hybrid dots are composed of a ZnO core, with an average size of 5 nm, warped with graphene nanosheets. Spectroscopic studies show that the graphene shell quenches the photoluminescence intensity of the ZnO nanocrystals by about 72%, primarily due to charge transfer reactions and static quenching. A red shift in the absorption peak is also observed. Raman spectroscopy determines G-band splitting of the graphene shell into two separated sub-bands (G(+), G(-)) caused by the strain induced symmetry breaking. It is shown that the hybrid ZnO/G QDs can be used as a counter-electrode for heterojunction colloidal quantum-dot solar cells for efficient charge-carrier collection, as evidenced by the external quantum efficiency measurement. Under the solar simulated spectrum (AM 1.5G), we report enhanced power conversion efficiency (35%) with higher short current circuit (80%) for lead sulfide-based solar cells as compared to devices prepared by pristine ZnO nanocrystals.

Thiocyanate-Passivated Diaminonaphthalene-Incorporated Dion-Jacobson Perovskite for Highly Efficient and Stable Solar Cells.

Two-dimensional (2D) metal halide perovskites have recently emerged as promising photovoltaic materials due to their superior ambient stability and rich structural diversity. However, power conversion efficiencies (PCEs) of the 2D perovskites solar cells (PSCs) still lag behind their three-dimensional (3D) counterpart, particularly due to the anisotropy in the charge carrier mobility and inhomogeneous energy landscape. A promising alternative is Dion-Jacobson (D-J) phase quasi-2D perovskite, where the bulky organic diammonium cations are introduced into inorganic frameworks to remove the weak van der Waals interactions between interlayers and to improve the open-circuit voltage (Voc). Although the D-J phase 2D perovskite shows a homogeneous energy landscape and better charge transport, their poor crystallinity and existence of higher trap states remain a major challenge for the development of high-efficiency solar cells device. To address this issue, here, we report the eclipsed D-J phase 2D perovskite using 1,5-diaminonaphthalene cation and subsequently treated the film with ammonium thiocyanate (NH4SCN) additive to further improve the film crystallinity, out-of-plane orientation, and carrier mobility. We observe that 2 mol NH4SCN surface treatment in NDA-based D-J phase perovskite leads to better film morphology and improved crystallinity, as confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Time-resolved photoluminescence (TRPL) spectroscopy and steady-state space charge limited current (SCLC) mobility measurement reveal a significant reduction of trap-assisted nonradiative recombination and improvement of carrier mobility in the thiocyanate-passivated perovskite. Consequently, the PCE of the NH4SCN-treated (NDA)(MA)3(Pb)4(I)13 perovskite device enhanced nearly 46% from 10.3 to 15.08%. We have further studied intensity-dependent J-V characteristics, which demonstrate the reduction of ideality factor, confirming the effective suppression of trap-assisted nonradiative recombination, consistent with the transient PL results. Electrochemical impedance spectroscopy (EIS) confirms the improved charge carrier transport in NH4SCN additive-treated devices. Interestingly, our additive-engineered unsealed perovskite devices retained 75% of their initial efficiency after 1000 h of continuous storage under 60% relative humidity. This study opens up the strategy for developing high-efficiency and stable 2D perovskite solar cells.

Facile NaF Treatment Achieves 20% Efficient ETL-Free Perovskite Solar Cells.

Electron transporting layer (ETL)-free perovskite solar cells (PSCs) exhibit promising progress in photovoltaic devices due to the elimination of the complex and energy-/time-consuming preparation route of ETLs. However, the performance of ETL-free devices still lags behind conventional devices because of mismatched energy levels and undesired interfacial charge recombination. In this study, we introduce sodium fluoride (NaF) as an interface layer in ETL-free PSCs to align the energy level between the perovskite and the FTO electrode. KPFM measurements clearly show that the NaF layer covers the surface of rough underlying FTO very well. This interface modification reduces the work function of FTO by forming an interfacial dipole layer, leading to band bending at the FTO/perovskite interface, which facilitates an effective electron carrier collection. Besides, the part of Na+ ions is found to be able to migrate into the absorber layer, facilitating enlarged grains and spontaneous passivation of the perovskite layer. As a result, the efficiency of the NaF-treated cell reaches 20%, comparable to those of state-of-the-art ETL-based cells. Moreover, this strategy effectively enhances the operational stability of devices by preserving 94% of the initial efficiency after storage for 500 h under continuous light soaking at 55 °C. Overall, these improvements in photovoltaic properties are clear indicators of enhanced interface passivation by NaF-based interface engineering.

Rationalizing the Effect of Polymer-Controlled Growth of Perovskite Single Crystals on Optoelectronic Properties.

To improve and modulate the optoelectronic properties of single-crystal (SC) metal halide perovskites (MHPs), significant progress has been achieved. Polymer-assisted techniques are a great approach to control the growth rate of SCs effectively. However, the resultant optoelectrical properties induced by polymers are ambiguous and need to be taken into the consideration. In this study, we have synthesized methylammonium lead triiodide (MAPbI3) SCs using polyethylene glycol (PEG) and polystyrene (PS) polymers where PEG contains oxygen functionalities and PS does not. We studied the electrical properties of these SCs under dark and illumination conditions. It was observed that PEG-assisted SCs showed few defects with lower photocurrent as compared to the PS-assisted ones because of defect-mediated conductivity. The results are further verified by transient current response, responsivity, and capacitance-frequency measurements. The present study sheds light on the polymer selection for the growth of MHP SCs and their optoelectronic properties.

Recent Progress in Growth of Single-Crystal Perovskites for Photovoltaic Applications.

The growth of high-quality single-crystal (SC) perovskite films is a great strategy for the fabrication of defect-free perovskite solar cells (PSCs) with photovoltaic parameters close to the theoretical limit, which resulted in high efficiency and superior stability of the device. Plenty of growth methods for perovskite SCs are available to achieve a maximum power conversion efficiency (PCE) surpassing 21% for SC-based PSCs. However, there is still a lot of room to further push the efficiency by considering new crystal growth techniques, interface engineering, passivation approaches, and additive engineering. In this review, we summarize the recent progress in the growth of SC-based perovskite films for the fabrication of high-efficiency and stable PSCs. We describe the impact of SC growth of perovskite films and their quality on the device performance and stability, compared with the commonly used polycrystalline perovskite films. In the last section, the challenges and potential of SCs in PSCs are also covered for future development.

Azahomofullerenes as New n-Type Acceptor Materials for Efficient and Stable Inverted Planar Perovskite Solar Cells.

Fullerene derivatives with a strong electron-accepting ability play a crucial role in enhancing both the performance and stability of perovskite solar cells (PSCs). However, most of the used fullerene molecules are based on [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), which limits the device performance due to difficulties in preparing high-quality and uniform thin films. Herein, solution-processable azahomofullerene (AHF) derivatives (abbreviated as AHF-1 and AHF-2) are reported as novel and effective electron-transport layers (ETLs) in p-i-n planar PSCs. Compared to the control PCBM ETL-based PSCs, the devices based on AHFs exhibit higher photovoltaic performances, which is attributed to the enhanced charge-transport properties and improved layer morphology leading to a maximum power conversion efficiency (PCE) of 20.21% in the case of the device based on AHF-2 ETL. Besides, due to the preferable energy band alignment with the perovskite layer, reduced trap states, and suppressed charge recombination, the device with AHF-2 ETL exhibits significantly suppressed hysteresis and improved stability under both ambient and thermal conditions.

Cost-Effective and Semi-Transparent PbS Quantum Dot Solar Cells Using Copper Electrodes.

PbS quantum dots (QDs) have gained significant attention as promising solution-based materials for third generation of photovoltaic (PV) devices, thanks to their size-tunable band gap, air stability, and low-cost solution processing. Gold (Au), despite its high cost, is the standard electrode in the conventional PbS QD PV architecture because of its perfect alignment with valence levels of PbS QDs. However, to comply with manufacturing requirements for scalable device processing, alternative cost-effective electrodes are urgently required. Here, we employed an interface engineering approach and deposited poly(3-hexylthiophene-2,5-diyl) as a hole transport layer on 1,2-ethanedithiol-capped PbS QDs in order to adjust the valence band of QDs with the work function of inexpensive copper (Cu) electrodes. In fact, this is the first report of a Au-free PbS QD PV system employing the conventional device structure. Our Cu-based device shows a maximum power conversion efficiency (PCE) of 8.7% which is comparable with that of the Au-based device (10.2%). Interestingly, the P3HT-based device shows improved stability with relatively 10% PCE loss after 230 h under continuous illumination. Moreover, using an ultrathin Cu electrode, a semitransparent PbS QD PV is fabricated with a remarkably high average visible transparency of 26% and a PCE of 7.4%.

Atomic Layer Deposition of an Effective Interface Layer of TiN for Efficient and Hysteresis-Free Mesoscopic Perovskite Solar Cells.

Perovskite solar cells (PSCs) have experienced outstanding advances in power conversion efficiencies (PCEs) by employing new electron transport layers (ETLs), interface engineering, optimizing perovskite morphology, and improving charge collection efficiency. In this work, we study the role of a new ultrathin interface layer of titanium nitride (TiN) conformally deposited on a mesoporous TiO2 (mp-TiO2) scaffold using the atomic layer deposition method. Our characterization results revealed that the presence of TiN at the ETL/perovskite interface improves the charge collection as well as reduces the interface recombination. We find that the morphology (grain size) and optical properties of the perovskite film deposited on the optimized mp-TiO2/TiN ETL are improved drastically, leading to devices with a maximum PCE of 19.38% and a high open-circuit voltage (Voc) of 1.148 V with negligible hysteresis and improved environmental (∼40% RH) and thermal (80 °C) stabilities.