RESUMEN
This study investigated the structure and magnetic properties of Co40Fe40V20 thin films with a thicknesses (tf) of 10 nm to 100 nm on a glass substrate. The X-ray diffraction (XRD) patterns of the CoFeV films demonstrated a significant crystalline body-centered cubic (BCC) CoFe (110) structure when the thickness was between 60 and 100 nm, and an amorphous status were shown when the thickness was from 10 to 50 nm. The strongest crystalline XRD peak was at 60 nm because it had a continuous mode of film growth and induced a large grain distribution. The low-frequency alternating current magnetic susceptibility (Ï°ac) property decreased when the frequency increased. The lowest Ï°ac value was detected at 60 nm owing to the large grain distribution inducing high coercivity (Hc) and then enhancing the spin coupling strength. The external field (Hext) was difficult to rotate spin state, then deduces the spin sensitivity and Ï°ac value is decreased. The highest Ï°ac meant the spin sensitivity was maximized at the optimal resonance frequency. The 50-mm thickness had the highest Ï°ac 0.045 value at an fres of 100 Hz. The fres value was less than 1000 Hz at all CoFeV thicknesses, suggesting that CoFeV films would be suitable for low-frequency magnetic component applications. Moreover, the saturation magnetization (Ms) revealed a thickness effect when the thicknesses had a larger Ms. The Hc values were between 3 Oe and 10 Oe at all CoFeV films, except for 60 nm. The Hc of the 60 nm film was about 80 Oe due to the larger grain distribution, and it induced strong remanent magnetization (Mr) and a larger squareness ratio (Mr/Ms) of 92%. The results of the magnetic measurement showed that the 60 nm Co40Fe40V20 film had greater Hc and a good squareness ratio.
RESUMEN
In this work, polymethylmethacrylate (PMMA) as a superior mediate for the pressure welding of silver nanowires (Ag NWs) networks as transparent electrodes without any thermal treatment is demonstrated. After a pressing of 200 kg cm-2 , not only the sheet resistance but also the surface roughness of the PMMA-mediated Ag NWs networks decreases from 2.6 kΩ sq-1 to 34.3 Ω sq-1 and from 76.1 to 12.6 nm, respectively. On the other hand, high transparency of an average transmittance in the visible wavelengths of 93.5% together with a low haze value of 2.58% can be achieved. In terms of optoelectronic applications, the promising potential of the PMMA-mediated pressure-welded Ag NWs networks used as a transparent electrode in a green organic light-emitting diode (OLED) device is also demonstrated. In comparison with the OLED based on commercial tin-doped indium oxide electrode, the increments of power efficiency and external quantum efficiency (EQE) from 80.1 to 85.9 lm w-1 and 19.2% to 19.9% are demonstrated. In addition, the PMMA-mediated pressure welding succeeds in transferring Ag NWs networks to flexible polyethylene naphthalate and polyimide substrates with the sheet resistance of 42 and 91 Ω sq-1 after 10 000 times of bending, respectively.
RESUMEN
The following structures are deposited under the conditions (a) glass/Ru(X nm)/Co60Fe20V20(5 nm) and (b) glass/Ta(Y nm)/Co60Fe20V20(5 nm) at room temperature (RT), where X and Y is from 5 nm to 10 nm. X-ray diffraction (XRD) patterns of glass/Ru(X nm)/Co60Fe20V20(5 nm) and glass/Ta(Y nm)/Co60Fe20V20(5 nm) reveal a weak crystallization at peak ß-(200) as the thicknesses of Ta increase from 8 nm to 10 nm, and the patterns indicate an amorphous state as the thicknesses of all Ru films and Ta thicknesses increase from 5 nm to 7 nm. The average contact angles of glass/Ru(X nm)/Co60Fe20V20(5 nm) and glass/Ta(Y nm)/Co60Fe20V20(5 nm) are less than 90° with testing liquids deionized (DI) water and glycerol. The average contact angle of water on the surface is nearly 90 degrees, indicating it is hydrophobic. Moreover, the maximum surface energy of glass/Ru(9 nm)/Co60Fe20V20(5 nm) and glass/Ta(10 nm)/Co60Fe20V20(5 nm) are 44.5 mJ/m2 and 37.4 mJ/m2, demonstrating that the high surface energy corresponds to a strong adhesion, which can be combined with a magnetic tunneling layer of MgO or AlOx and is compatible with other semiconductor processes in magnetic recording media and photoelectric applications.
RESUMEN
Tunable multilevel storage of complementary resistive switching (CRS) on single-step formation of ZnO/ZnWOx bilayer structure via interfacial engineering was demonstrated for the first time. In addition, the performance of the ZnO/ZnWOx-based CRS device with the voltage- and current-sweep modes was demonstrated and investigated in detail. The resistance switching behaviors of the ZnO/ZnWOx bilayer ReRAM with adjustable RESET-stop voltages was explained using an electrochemical redox reaction model whose electron-hopping activation energies of 28, 40, and 133 meV can be obtained from Arrhenius equation at RESET-stop voltages of 1.0, 1.3, and 1.5 V, respectively. In the case of the voltage-sweep operation on the ZnO-based CRS device, the maximum array numbers (N) of 9, 15, and 31 at RESET-stop voltages of 1.4, 1.5, and 1.6 V were estimated, while the maximum array numbers increase into 47, 63, and 105 at RESET-stop voltages of 2.0, 2.2, and 2.4 V, operated by the current-sweep mode, respectively. In addition, the endurance tests show a very stable multilevel operation at each RESET-stop voltage under the current-sweep mode.