Magnetoresistance properties in nickel-catalyzed, air-stable, uniform, and transfer-free graphene.

A transfer-free graphene with high magnetoresistance (MR) and air stability has been synthesized using nickel-catalyzed atmospheric pressure chemical vapor deposition. The Raman spectrum and Raman mapping reveal the monolayer structure of the transfer-free graphene, which has low defect density, high uniformity, and high coverage (>90%). The temperature-dependent (from 5 to 300 K) current-voltage (I-V) and resistance measurements are performed, showing the semiconductor properties of the transfer-free graphene. Moreover, the MR of the transfer-free graphene has been measured over a wide temperature range (5-300 K) under a magnetic field of 0 to 1 T. As a result of the Lorentz force dominating above 30 K, the transfer-free graphene exhibits positive MR values, reaching ∼8.7% at 300 K under a magnetic field (1 Tesla). On the other hand, MR values are negative below 30 K due to the predominance of the weak localization effect. Furthermore, the temperature-dependent MR values of transfer-free graphene are almost identical with and without a vacuum annealing process, indicating that there are low density of defects and impurities after graphene fabrication processes so as to apply in air-stable sensor applications. This study opens avenues to develop 2D nanomaterial-based sensors for commercial applications in future devices.

Low-Power Photodetectors Based on PVA-Modified Reduced Graphene Oxide Hybrid Solutions.

Photodetectors based on reduced graphene oxide (rGO) have attracted much attention owing to their simple and low-cost fabrication process. However, the aggregation and defects of rGO flakes still limit the performance of rGO photodetectors. Controlling the composition of rGO has become a vital factor for its prospective applications. For example, the interconnection between rGO and polymers for modified morphologies of rGO films leads to an enhanced performance of devices. In this work, a practical approach to engineer surface uniformity and enhance the performance of a photodetector by modifying the rGO film with hydrophilic polymers poly(vinyl alcohol) (PVA) is reported. Compared with the rGO photodetector, the on/off ratio for the PVA/rGO photodetector shows 3.5 times improvement, and the detectivity shows 53% enhancement even when the photodetector is operated at a low bias of 0.3 V. This study provides an effective route to realize PVA/rGO photodetectors with a low-power operation which shows promising opportunities for the future development of green systems.

Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection.

This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 103 cm2/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 × 1012 cmHz1/2/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 µs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future.

White-Light Photosensors Based on Ag Nanoparticle-Reduced Graphene Oxide Hybrid Materials.

The unique and outstanding electrical and optical properties of graphene make it a potential material to be used in the construction of high-performance photosensors. However, the fabrication process of a graphene photosensor is usually complicated and the size of the device also is restricted to micrometer scale. In this work, we report large-area photosensors based on reduced graphene oxide (rGO) implemented with Ag nanoparticles (AgNPs) via a simple and cost-effective method. To further optimize the performance of photosensors, the absorbance and distribution of the electrical field intensity of graphene with AgNPs was simulated using the finite-difference time-domain (FDTD) method through use of the surface plasmon resonance effect. Based on the simulated results, we constructed photosensors using rGO with 60⁻80 nm AgNPs and analyzed the characteristics at room temperature under white-light illumination for outdoor environment applications. The on/off ratio of the photosensor with AgNPs was improved from 1.166 to 9.699 at the bias voltage of -1.5 V, which was compared as a sample without AgNPs. The proposed photosensor affords a new strategy to construct cost-effective and large-area graphene films which raises opportunities in the field of next-generation optoelectronic devices operated in an outdoor environment.