Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers.

This article presents low-loss mid-infrared waveguides fabricated on a Ge-rich SiGe strain-relaxed buffer grown on an industrial-scale 200 mm wafer, with propagation losses below 0.5 dB/cm for 5-7 µm wavelengths and below 5 dB/cm up to 11 µm. Investigation reveals free-carrier absorption as the primary loss factor for 5-6.5 µm and silicon multiphonon absorption beyond 7 µm wavelength. This result establishes a foundation for a scalable, silicon-compatible mid-infrared platform, enabling the realisation of photonic integrated circuits for various applications in the mid-infrared spectral region, from hazard detection to spectroscopy and military imaging.

Dual-polarization pump rejection filter in silicon nitride technology.

On-chip pump rejection filters are key building blocks in a variety of applications exploiting nonlinear phenomena, including Raman spectroscopy and photon-pair generation. Ultrahigh rejection has been achieved in the silicon technology by non-coherent cascading of modal-engineered Bragg filters. However, this concept cannot be directly applied to silicon nitride waveguides as the comparatively lower index contrast hampers the suppression of residual light propagating in the orthogonal polarization, limiting the achievable rejection. Here, we propose and demonstrate a novel, to the best of our knowledge, strategy to overcome this limitation based on non-coherent cascading of the modal- and polarization-engineered Bragg filters. Based on this concept, we experimentally demonstrate a rejection exceeding 60 dB for both polarizations, with a bandwidth of 4.4 nm. This is the largest rejection reported for silicon nitride Bragg gratings supporting both polarizations.

Broadband behavior of quadratic metalenses with a wide field of view.

Metalenses are attracting a large interest for the implementation of complex optical functionalities in planar and compact devices. However, chromatic and off-axis aberrations remain standing challenges. Here, we experimentally investigate the broadband behavior of metalenses based on quadratic phase profiles. We show that these metalenses do not only guarantee an arbitrarily large field of view but are also inherently tolerant to longitudinal and transverse chromatic aberrations. As such, we demonstrate a single-layer, silicon metalens with a field of view of 86° and a bandwidth up to 140 nm operating at both 1300 nm and 1550 nm telecommunication wavelength bands.

1†GHz electro-optical silicon-germanium modulator in the 5-9 µm wavelength range.

Spectroscopy in the mid-infrared (mid-IR) wavelength range is a key technique to detect and identify chemical and biological substances. In this context, the development of integrated optics systems paves the way for the realization of compact and cost-effective sensing systems. Among the required devices, an integrated electro-optical modulator (EOM) is a key element for advanced sensing circuits exploiting dual comb spectroscopy. In this paper, we have experimentally demonstrated an integrated EOM operating in a wide wavelength range, i.e. from 5 to 9 µm at radio frequency (RF) as high as 1 GHz. The modulator exploits the variation of free carrier absorption in a Schottky diode embedded in a graded silicon germanium (SiGe) photonic waveguide.

Boosting the SiN nonlinear photonic platform with transition metal dichalcogenide monolayers.

In the past few years, we have witnessed increased interest in the use of 2D materials to produce hybrid photonic nonlinear waveguides. Although graphene has attracted most of the attention, other families of 2D materials such as transition metal dichalcogenides have also shown promising nonlinear performance. In this work, we propose a strategy for designing silicon nitride waveguiding structures with embedded MoS2 for nonlinear applications. The transverse geometry of the hybrid waveguide is optimized for high third-order nonlinear effects using optogeometrical engineering and multiple layers of MoS2. Stacking multiple monolayers results in an improvement of two orders of magnitude compared to standard silicon nitride waveguides. The hybrid waveguide performance is then investigated in terms of four-wave mixing enhancement in micro-ring resonator configurations. A signal/idler conversion efficiency of -6.3 dB is reached for a wavelength of around 1.55 µm with a 5 mW pumping level.

Strong pump rejection filter for polarization-diverse silicon platforms.

Integrated wavelength filters with high optical rejection are key components in several silicon photonics circuits, including quantum photon-pair sources and spectrometers. Non-coherent cascading of modal-engineered Bragg filters allows for remarkable optical rejections in structures that only support transverse-electric (TE) polarized modes such as uncladded 220-nm-thick silicon. However, the restriction to TE-only platforms limits the versatility of the non-coherent cascading approach. Here, we propose and experimentally demonstrate a new, to the best of our knowledge, approach for high-rejection filters in polarization-diverse platforms by combining non-coherent cascading of modal-engineered Bragg filters and anisotropy-engineered metamaterial bends. Bragg filters provide a high rejection of the TE mode, while the metamaterial bends remove any residual power propagating in the transverse-magnetic (TM) mode, without any penalty in terms of insertion loss or device footprint. Based on this strategy, we demonstrate optical rejection exceeding 60 dB in 300-nm-thick, cladded silicon waveguides.

Mid-infrared Fourier-transform spectrometer based on metamaterial lateral cladding suspended silicon waveguides.

Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, owing to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the strong absorption of the buried oxide layer for wavelengths beyond 4 µm. Here, we overcome this limitation by utilizing metamaterial-cladded suspended silicon waveguides to implement a spatial heterodyne Fourier-transform (SHFT) spectrometer operating at wavelengths near 5.5 µm. The metamaterial-cladded geometry allows removal of the buried oxide layer, yielding measured propagation loss below 2 dB/cm at wavelengths between 5.3 and 5.7 µm. The SHFT spectrometer comprises 19 Mach-Zehnder interferometers with a maximum arm length imbalance of 200 µm, achieving a measured spectral resolution of 13 cm-1 and a free spectral range of 100 cm-1 at wavelengths near 5.5 µm.

Broadband Fourier-transform silicon nitride spectrometer with wide-area multiaperture input.

Integrated microspectrometers implemented in silicon photonic chips have gathered a great interest for diverse applications such as biological analysis, environmental monitoring, and remote sensing. These applications often demand high spectral resolution, broad operational bandwidth, and large optical throughput. Spatial heterodyne Fourier-transform (SHFT) spectrometers have been proposed to overcome the limited optical throughput of dispersive and speckle-based on-chip spectrometers. However, state-of-the-art SHFT spectrometers in near-infrared achieve large optical throughput only within a narrow operational bandwidth. Here we demonstrate for the first time, to the best of our knowledge, a broadband silicon nitride SHFT spectrometer with the largest light collecting multiaperture input (320×410µm2) ever implemented in an SHFT on-chip spectrometer. The device was fabricated using 248 nm deep-ultraviolet lithography, exhibiting over 13 dB of optical throughput improvement compared to a single-aperture device. The measured resolution varies between 29 and 49 pm within the 1260-1600 nm wavelength range.

Silicon photonic on-chip spatial heterodyne Fourier transform spectrometer exploiting the Jacquinot's advantage.

Silicon photonics on-chip spectrometers are finding important applications in medical diagnostics, pollution monitoring, and astrophysics. Spatial heterodyne Fourier transform spectrometers (SHFTSs) provide a particularly interesting architecture with a powerful passive error correction capability and high spectral resolution. Despite having an intrinsically large optical throughput (étendue, also referred to as Jacquinot's advantage), state-of-the-art silicon SHFTSs have not exploited this advantage yet. Here, we propose and experimentally demonstrate for the first time, to the best of our knowledge, an SHFTS implementing a wide-area light collection system simultaneously feeding an array of 16 interferometers, with an input aperture as large as 90µm×60µm formed by a two-way-fed grating coupler. We experimentally demonstrate 85 pm spectral resolution, 600 pm bandwidth, and 13 dB étendue increase, compared with a device with a conventional grating coupler input. The SHFTS was fabricated using 193 nm deep-UV optical lithography and integrates a large-size input aperture with an interferometer array and monolithic Ge photodetectors, in a 4.5mm2 footprint.

Dual-band fiber-chip grating coupler in a 300 mm silicon-on-insulator platform and 193 nm deep-UV lithography.

Surface grating couplers are fundamental building blocks for coupling the light between optical fibers and integrated photonic devices. However, the operational bandwidth of conventional grating couplers is intrinsically limited by their wavelength-dependent radiation angle. The few dual-band grating couplers that have been experimentally demonstrated exhibit low coupling efficiencies and rely on complex fabrication processes. Here we demonstrate for the first time, to the best of our knowledge, the realization of an efficient dual-band grating coupler fabricated using 193 nm deep-ultraviolet lithography for 10 Gbit symmetric passive optical networks. The footprint of the device is 17×10µm2. We measured coupling efficiencies of -4.9 and -5.2dB with a 3-dB bandwidth of 27 and 56 nm at the wavelengths of 1270 and 1577 nm, corresponding to the upstream and downstream channels, respectively.

Design and Simulation Investigation of Si3N4 Photonics Circuits for Wideband On-Chip Optical Gas Sensing around 2 µm Optical Wavelength.

We theoretically explore the potential of Si3N4 on SiO2 waveguide platform toward a wideband spectroscopic detection around the optical wavelength of 2 µm. The design of Si3N4 on SiO2 waveguide architectures consisting of a Si3N4 slot waveguide for a wideband on-chip spectroscopic sensing around 2 µm, and a Si3N4 multi-mode interferometer (MMI)-based coupler for light coupling from classical strip waveguide into the identified Si3N4 slot waveguides over a wide spectral range are investigated. We found that a Si3N4 on SiO2 slot waveguide structure can be designed for using as optical interaction part over a spectral range of interest, and the MMI structure can be used to enable broadband optical coupling from a strip to the slot waveguide for wideband multi-gas on-chip spectroscopic sensing. Reasons for the operating spectral range of the system are discussed.

Frequency-tuning dual-comb spectroscopy using silicon Mach-Zehnder modulators.

Dual-comb spectroscopy using a silicon Mach-Zehnder modulator is reported for the first time. First, the properties of frequency combs generated by silicon modulators are assessed in terms of tunability, coherence, and number of lines. Then, taking advantage of the frequency agility of electro-optical frequency combs, a new technique for fine resolution absorption spectroscopy is proposed, named frequency-tuning dual-comb spectroscopy, which combines dual-comb spectroscopy and frequency spacing tunability to measure optical spectra with detection at a unique RF frequency. As a proof of concept, a 24 GHz optical bandwidth is scanned with a 1 GHz resolution.

Ge-rich graded SiGe waveguides and interferometers from 5 to 11†µm wavelength range.

The mid-infrared (mid-IR) wavelength range hosts unique vibrational and rotational resonances of a broad variety of substances that can be used to unambiguously detect the molecular composition in a non-intrusive way. Mid-IR photonic-integrated circuits (PICs) are thus expected to have a major impact in many applications. Still, new challenges are posed by the large spectral width required to simultaneously identify many substances using the same photonic circuit. Ge-rich graded SiGe waveguides have been proposed as a broadband platform approach for mid-IR PICs. In this work, ultra-broadband waveguides are experimentally demonstrated within unprecedented wavelength range, efficiently guiding light from 5 to 11 µm. Interestingly, losses from 0.5 to 1.2 dB/cm are obtained between 5.1 and 8 µm wavelength, and values below 3 dB/cm are measured from 9.5 to 11.2 µm wavelength. An increase of propagation losses is seen between 8 and 9.5 µm; however, values stay below 4.6 dB/cm in the entire wavelength range. A detailed analysis of propagation losses is reported, supported by secondary ion mass spectrometry measurement, and different contributions are analyzed: silicon substrate absorption, oxygen impurities, free carrier absorption by residual doping, sidewall roughness and multiphonon absorption. Finally, Mach-Zehnder interferometers are characterized, and wideband operation is experimentally obtained from 5.5 to 10.5 µm wavelength.

Erbium-doped hybrid waveguide amplifiers with net optical gain on a fully industrial 300 mm silicon nitride photonic platform.

Recently, erbium-doped integrated waveguide devices have been extensively studied as a CMOS-compatible and stable solution for optical amplification and lasing on the silicon photonic platform. However, erbium-doped waveguide technology still remains relatively immature when it comes to the production of competitive building blocks for the silicon photonics industry. Therefore, further progress is critical in this field to answer the industry's demand for infrared active materials that are not only CMOS-compatible and efficient, but also inexpensive and scalable in terms of large volume production. In this work, we present a novel and simple fabrication method to form cost-effective erbium-doped waveguide amplifiers on silicon. With a single and straightforward active layer deposition, we convert passive silicon nitride strip waveguide channels on a fully industrial 300 mm photonic platform into active waveguide amplifiers. We show net optical gain over sub-cm long waveguide channels that also include grating couplers and mode transition tapers, ultimately demonstrating tremendous progress in developing cost-effective active building blocks on the silicon photonic platform.

Polarization independent and temperature tolerant AWG based on a silicon nitride platform.

A polarization tolerant optical receiver is a key building block for the development of wavelength division multiplexing based high-speed optical data links. However, the design of a polarization independent demultiplexer is not trivial. In this Letter, we report on the realization of a polarization tolerant arrayed waveguide grating (AWG) on a 300-mm silicon nitride (SiN) photonic platform. By introducing a series of individual polarization rotators in the middle of the waveguide array, the polarization dependence of the AWG has been substantially reduced. Insertion losses below 2.2 dB and a crosstalk level better than -29dB has been obtained for transverse electric and transverse magnetic polarizations on a four-channel coarse AWG. The AWG temperature sensitivity has also been evaluated. Thanks to the low thermo-optical coefficient of SiN, a thermal shift below 12 pm/°C has been demonstrated.

Silicon subwavelength modal Bragg grating filters with narrow bandwidth and high optical rejection.

Waveguide Bragg grating filters with narrow bandwidths and high optical rejections are key functions for several advanced silicon photonics circuits. Here, we propose and demonstrate a new, to the best of our knowledge, Bragg grating geometry that provides a narrowband and high rejection response. It combines the advantages of subwavelength and modal engineering. As a proof-of-concept demonstration, we implement the proposed Bragg filters in 220-nm-thick Si technology with a single etch step. We experimentally show flexible control of the filter selectivity, with measured null-to-null bandwidths below 2 nm, and strength of 60 dB rejection with a null-to-null bandwidth of 1.8 nm.

Subwavelength engineering for Brillouin gain optimization in silicon optomechanical waveguides.

Brillouin optomechanics has recently emerged as a promising tool to implement new functionalities in silicon photonics, including high-performance opto-RF processing and nonreciprocal light propagation. One key challenge in this field is to maximize the photon-phonon interaction and the phonon lifetime, simultaneously. Here, we propose a new, to the best of our knowledge, strategy that exploits subwavelength engineering of the photonic and phononic modes in silicon membrane waveguides to maximize the Brillouin gain. By properly designing the dimensions of the subwavelength periodic structuration, we tightly confine near-infrared photons and GHz phonons, minimizing leakage losses and maximizing the Brillouin coupling. Our theoretical analysis predicts a high mechanical quality factor of up to 700 and a remarkable Brillouin gain yielding 3500(W⋅m)-1 for minimum feature size of 50 nm, compatible with electron-beam lithography. We believe that the proposed waveguide with subwavelength nanostructure holds great potential for the engineering of Brillouin optomechanical interactions in silicon.

Sub-decibel silicon grating couplers based on L-shaped waveguides and engineered subwavelength metamaterials.

The availability of low-loss optical interfaces to couple light between standard optical fibers and high-index-contrast silicon waveguides is essential for the development of chip-integrated nanophotonics. Input and output couplers based on diffraction gratings are attractive coupling solutions. Advanced grating coupler designs, with Bragg or metal mirror underneath, low- and high-index overlays, and multi-level or multi-layer layouts, have proven less useful due to customized or complex fabrication, however. In this work, we propose a rather simpler in design of efficient off-chip fiber couplers that provide a simulated efficiency up to 95% (-0.25 dB) at a wavelength of 1.55 µm. These grating couplers are formed with an L-shaped waveguide profile and synthesized subwavelength grating metamaterials. This concept jointly provides sufficient degrees of freedom to simultaneously control the grating directionality and out-radiated field profile of the grating mode. The proposed chip-to-fiber couplers promote robust sub-decibel coupling of light, yet contain device dimensions (> 120 nm) compatible with standard lithographic technologies presently available in silicon nanophotonic foundries. Fabrication imperfections are also investigated. Dimensional offsets of ± 15 nm in shallow-etch depth and ± 10 nm in linewidth's and mask misalignments are tolerated for a 1-dB loss penalty. The proposed concept is meant to be universal, which is an essential prerequisite for developing reliable and low-cost optical couplers. We foresee that the work on L-shaped grating couplers with sub-decibel coupling efficiencies could also be a valuable direction for silicon chip interfacing in integrated nanophotonics.

SiGe-enhanced Si capacitive modulator integration in a 300 mm silicon photonics platform for low power consumption.

The successful integration of capacitive phase shifters featuring a p-type strained SiGe layer in a 300 mm silicon photonics platform is presented. The phase shift is evaluated with a voltage swing of only 0.9 Vpp, compatible with CMOS technology. A good correlation is shown between the phase shift efficiency from 10 to 60°/mm and the capacitive oxide thickness varying from 15 to 4 nm. Corresponding insertion losses are as low as 3 dB/mm thanks to the development of low loss poly-silicon and to a careful design of the doped layers within the waveguide. The thin SiGe layer brings an additional 20% gain in efficiency due to higher hole efficiency in strained SiGe.

Broadband integrated racetrack ring resonators for long-wave infrared photonics.

Long-wave infrared photonics is an exciting research field meant to revolutionize our daily life by means of key advances in several domains including communications, imaging systems, medical care, environmental monitoring, or multispectral chemical sensing, among others. For this purpose, integrated photonics is particularly promising owing to its compactness, mass fabrication, and energy-efficient characteristics. We present in this Letter, for the first time to the best of our knowledge, broadband integrated racetrack ring resonators operating within the crucial molecular fingerprint region. Devices show an operation bandwidth of Δλ≈900 nm with a central wavelength of λ≈8 µm, a quality factor of Q≈3200, and an extinction ratio of ER≈10 dB around the critical coupling condition. These resonant structures establish the basis of a new generation of integrated building blocks for long-wave infrared photonics that opens the route towards miniaturized multitarget molecule detection systems.