Nonvolatile n-Type Doping and Metallic State in Multilayer-MoS2 Induced by Hydrogenation Using Ionic-Liquid Gating.

Manipulation of the carrier density of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Herein, we applied the ionic-liquid-gating (ILG) method to inject the smallest ions, H+, into layered MoS2 to manipulate its carrier concentration. The measurements demonstrate that the injection of H+ realizes a nonvolatile n-type doping and metallic state in multilayer-MoS2 with a concentration of injection electron of ∼1.08 × 1013 cm-2 but has no effect on monolayer-MoS2, which clearly reveals that the H+ is injected into the interlayer of MoS2, not in the crystal lattice. The H+-injected multilayer-MoS2 was then used as the contact electrodes of a monolayer-MoS2 field effect transistor to improve the contact quality, and its performance has been enhanced. Our work deepens the understanding of the ILG technology and extends its application in TMDs.

Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction.

Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A W-1and a fast response time of 20µs at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field. A specific detectivity of 1012Jones and a broad spectral response ranging from 300 to 1100 nm can also be achieved. This work provides an alternative strategy for high-performance self-powered optoelectronic devices.

N-type doping of black phosphorus single crystal by tellurium.

Black phosphorus has many potential applications in optoelectronic devices because of its unique properties. Adjusting its performance by doping is an important issue of research. In this paper, we synthesized high-quality Te-doped crystals by the chemical vapor transport method. Tellurium doping with an atomic ratio of 0.1% was confirmed by X-ray photoelectron spectroscopy, X-ray diffraction, and energy dispersive X-ray analysis. The performance of field effect transistors devices shows that the hole mobility of Te-doped black phosphorous (BP) is significantly improved compared with that of undoped-BP. The highest hole mobility at room temperature is 719 cm2 V-1 s-1, and the electron mobility is 63 cm2 V-1 s-1. Te-doped BP field effect transistors show an obvious bipolar behavior.

Design of a two-layer structure to significantly improve the performance of zinc oxide resistive memory.

Resistive random access memory (RRAM) is considered to be one of the important candidates for the next generation of memory devices. Zinc oxide resistive memory has also been studied for many years, but there are still some controversial topics and problems. Herein, an unusual resistance state has been observed in devices following the measurement and analysis of ZnO resistive memories with different thicknesses, a middle resistance state was speculated to explain the instability of ZnO RRAM. According to this speculation, a two-layer structure ZnO RRAM has been designed to significantly increase the device performance with the introduction of an HfO2 layer and the enhancement has also been explained based on the results of first-principles calculations.

HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio.

Enhanced on/off ratio, obvious threshold voltage left shift, newly emerging bipolar field effect performance and most importantly, excellent stability in ambient condition have been reported for the HfO2-passivated black phosphorus field effect transistors . Both Raman spectra and x-ray photoelectron spectroscopy (XPS) show a thickness reduction effect after HfO2 passivation, XPS further demonstrates that the formation of P-Hf and P-O chemical bonds contributes to the thinning of layered black phosphorus (BP), in which P-Hf bonds also provide chemical protection for BP flakes from degradation. Atomic force microscopy measures the thickness of the passivation layer and also verifies the stability of the passivated BP flakes.

Fabrication of controllably variable sub-100 nm gaps in silver nanowires by photothermal-induced stress.

A technique to fabricate nanogaps with controllably variable gap width in silver (Ag) nanowires (NWs) by photothermal-induced stress utilizing a focused continuous-wave laser (532 nm) is presented. For the case of an Ag NW on gold thin film, a gap width starting from ∼20 nm is achieved with a critical minimum power (CMP) of about 160 mW, whereas in the case of an Ag NW placed on top of a zinc oxide NW, the attained gap width is as small as a few nm (<10 nm) with a CMP of only ∼100 mW. In both cases, the CMP is much lower as compared to the required CMP (∼280 mW) for an Ag NW placed on a bare silica substrate. The photothermal-induced stress combined with Rayleigh instability, melting, and sublimation of Ag aids in breaking the Ag NW. In particular, the former one plays a key role in attaining an extremely narrow gap. This technique to fabricate sub-100 nm nanogaps in metal NWs can be extensively implemented in fabrication and maintenance of nanomechanical, nanoplasmonic, and nanoelectronic devices.

Resolving the Spatial Structures of Bound Hole States in Black Phosphorus.

Understanding the local electronic properties of individual defects and dopants in black phosphorus (BP) is of great importance for both fundamental research and technological applications. Here, we employ low-temperature scanning tunnelling microscope (LT-STM) to probe the local electronic structures of single acceptors in BP. We demonstrate that the charge state of individual acceptors can be reversibly switched by controlling the tip-induced band bending. In addition, acceptor-related resonance features in the tunnelling spectra can be attributed to the formation of Rydberg-like bound hole states. The spatial mapping of the quantum bound states shows two distinct shapes evolving from an extended ellipse shape for the 1s ground state to a dumbbell shape for the 2px excited state. The wave functions of bound hole states can be well-described using the hydrogen-like model with anisotropic effective mass, corroborated by our theoretical calculations. Our findings not only provide new insight into the many-body interactions around single dopants in this anisotropic two-dimensional material but also pave the way to the design of novel quantum devices.

Influence of the precursor anion on the photoluminescence properties of ZnO.

ZnO nanorod arrays were synthesized by hydrothermal method with two different zinc salts as precursors: zinc acetate and zinc nitrate. Different anions in solution distinctly influence the intrinsic defects in ZnO nanostructures, resulting in different photoluminescence properties. The defects induced by precursors were systematically studied by photoluminescence spectroscopy, X-ray photoelectron spectrometer and electron paramagnetic resonance. The results show that zinc acetate precursor mainly introduces zinc vacancy to the lattice while ZnO nanorods obtained from zinc nitrate contain more interstitial oxygen.

Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots.

Monolayer molybdenum disulfide (MoS2), consisting of covalently bonded S-Mo-S sandwiched layers, has high carrier mobility and a direct bandgap of 1.8 eV, offering properties for electronic and optoelectronic devices with high performance. Usually, it is essential to modulate the carrier concentrations and conductivities of monolayer MoS2 for practical applications. In this paper, black phosphorus (BP) quantum dots (QDs) were synthesized by a liquid exfoliation method successfully, and have a diameter of ∼5 nm as confirmed with a transmission electron microscope (TEM). BP QDs were utilized to decorate monolayer MoS2 grown by chemical vapor deposition (CVD). The Raman and PL spectra of the BP QD/MoS2 hybrid structure clearly indicate that BP QDs are an effective n-type doping scheme for monolayer MoS2. Back-gated monolayer MoS2 transistors were fabricated and show an improved source-drain current after BP QD modifications. A high electron concentration of ∼5.39 × 1012 cm-2 in monolayer MoS2 was achieved, which is beneficial for designing FETs and photodetector devices with novel functions.

Control of the threshold voltage in ZnO nanobelt field-effect transistors by using MoO x thin film.

We report on the feasible control of the threshold voltage (V th) in ultra-thin ZnO nanobelt FETs by using substoichiometric molybdenum trioxide (MoO x , x < 3) either as a modification layer on the surface of ZnO nanobelts or as electrodes instead of the widely used Ti/Au. ZnO nanobelt FETs using Ti/Au as the electrodes usually exhibit a negative threshold voltage, indicating n-channel depletion mode behavior, whereas ZnO FETs with MoO x /Au electrodes instead of Ti/Au show a positive shift of threshold voltage, exhibiting an n-channel type enhancement mode, which can be explained by a high Schottky barrier created at the interface of MoO x and the ZnO channel. In contrast, the decoration on the surface of ZnO channel by MoO x significantly increases the zero-bias conductivity and electron carrier concentration, and then negatively shifts the threshold voltage. We propose that MoO x thin film may play a passivation effect role, much more so than the doping effect role, due to the large amount of adsorbed species on as-grown ZnO nanobelts, especially oxygen species.

Hydrolysis of Solid Buffer Enables High-Performance Aqueous Zinc Ion Battery.

Aqueous zinc (Zn) ion batteries (AZIBs) have not yet fulfilled their talent of high safety and low cost since the anode/electrolyte interface (AEI) has long been impeded by hydrogen evolution, surface corrosion, dendritic growth, and by-product accumulation. Here, the hydrolysis of solid buffers is elaborately proposed to comprehensively and enduringly handle these issues. Take 2D layered black phosphorus (BP) as a hydrolytic subject. It is reported that the phosphoric acid generated by hydrolysis in an aqueous electrolyte produces a zinc phosphate (ZPO) rich solid electrolyte interphase (SEI) layer, which largely inhibits the dendrite growth, surface corrosion, and hydrogen evolution. Meanwhile, the hydrolytic phosphoric acid stabilizes the pH value near AEI, avoiding the accumulation of alkaline by-products. Notably, compared with the disposable ZPO engineerings of anodic SEI pre-construction and electrolyte additive, the hydrolysis strategy of BP can realize a dramatically prolonged protective effect. As a result, these multiple merits endow BP modified separator to achieve improved stripping/plating stability toward Zn anode with more than ten times lifespan enhancement in Zn||Zn symmetrical cell. More encouragingly, when coupled with a V2 O5 ·nH2 O cathode with ultra-high loadings (34.1 and 28.7 mg cm-2 ), the cumulative capacities are remarkably promoted for both coin and pouch cells.

Composite structure of SiO2@AgNPs@p-SiNWs for enhanced broadband optical antireflection.

The composite structure of SiO(2)@AgNPs@p-SiNWs based on silicon nanowires (SiNWs) produced by metal-assisted chemical etching (MaCE) method has been designed to realize the significant reflection suppression over a broad wavelength range (300 - 2500 nm). Especially, the reflectivity of the structure even below 0.3% at a wide range of 620 - 1950 nm can be achieved. It also has been demonstrated that SiO(2) capers play a dominant role in the significant reflection suppression of the composite structure.

Electrically pumped random lasing from FTO/porous insulator/n-ZnO/p(+)-Si devices.

Electrically pumped random lasing (RL) has been realized in FTO/porous insulator/n-ZnO/p(+)-Si devices. It is demonstrated that RL originates from the confining and recurrent scattering of light in the random cavities within the insulating layer, which are formed due to the glow discharge. The glow discharge also induces the observed negative differential resistance (NDR) effect following the normal I-V characteristics. The results present a new strategy to realize electrically pumped RL in ZnO-based metal-insulator-semiconductor device by simply modifying the morphology of the insulating layer.

Effect of the defect on photoluminescence property of Al-coated ZnO nanostructures.

The room-temperature photoluminescence (PL) spectra of hydrothermal grown ZnO film and nanowires coated with Al are investigated, which exhibit much less UV emission enhancement ratio as against that of nanowires fabricated by thermal evaporation method. A model is suggested at last to interpret the experimental results considering the influence of the defect on the contact property between metal and ZnO, which is further evidenced by the weak PL enhancement ratio of thermal evaporation grown ZnO nanowires with H(2)O(2) treatment.

Nomogram including tumor deposition count to noninvasively evaluate the prognosis of rectal cancer patients: A retrospective study.

To build a nomogram model that includes tumor deposition (TDs) count to noninvasively evaluate the prognosis of patients with rectal cancer (RC). A total of 262 patients between January 2013 and December 2018 were recruited and divided into 2 cohorts: training (n = 171) and validation (n = 91). Axial portal venous phase computed tomography images were used to extract radiomic features, and the least absolute shrinkage and selection operator-Cox analysis was applied to develop an optimal radiomics model to derive the Rad-score. A Cox regression model combining clinicopathological factors and Rad-scores was constructed and visualized using a nomogram. And its ability to predict RC patients' survival was tested by Kaplan-Meier survival analysis. The time-dependent concordance index curve was used to demonstrate the differentiation degree of model. Calibration and decision curve analyses were used to evaluate the calibration accuracy and clinical usefulness of the nomogram model, and the prediction performance of the nomogram model was compared with the clinical and radiomics models using the likelihood test. Computed tomography-based Rad-score, pathological tumor (pT) stageT4, and TDs count were independent risk factors affecting the prognosis of RC. The whole concordance index of the nomogram model for predicting the overall survival rates of RC was higher than that of the clinical and radiomics models in the training (0.812 vs 0.59, P = .019; 0.812 vs 0.714, P = .014) and validation groups (0.725 vs 0.585, P = .002; 0.725 vs 0.751, P = .256). The nomogram model could effectively predict patients' overall survival rate (hazard ratio = 9.25, 95% CI = [1.17-72.99], P = .01). The nomogram model also showed a higher clinical net benefit than the clinical and radiomics models in the training and validation groups. The nomogram model developed in this study can be used to noninvasively evaluate the prognosis of RC patients. The TDs count is an independent risk factor for the prognosis of RC.

A nomogram for preoperative differentiation of tumor deposits from lymph node metastasis in rectal cancer: A retrospective study.

The objective is to develop and validate a combined model for noninvasive preoperative differentiating tumor deposits (TDs) from lymph node metastasis (LNM) in patients with rectal cancer (RC). A total of 204 patients were enrolled and randomly divided into 2 sets (training and validation set) at a ratio of 8:2. Radiomics features of tumor and peritumor fat were extracted by using Pyradiomics software from the axial T2-weighted imaging of MRI. Rad-score based on extracted Radiomics features were calculated by combination of feature selection and the machine learning method. Factors (Rad-score, laboratory test factor, clinical factor, traditional characters of tumor on MRI) with statistical significance were integrated to build a combined model. The combined model was visualized by a nomogram, and its distinguish ability, diagnostic accuracy, and clinical utility were evaluated by the receiver operating characteristic curve (ROC) analysis, calibration curve, and clinical decision curve, respectively. Carbohydrate antigen (CA) 19-9, MRI reported node stage (MRI-N stage), tumor volume (cm3), and Rad-score were all included in the combined model (odds ratio = 3.881 for Rad-score, 2.859 for CA19-9, 0.411 for MRI-N stage, and 1.055 for tumor volume). The distinguish ability of the combined model in the training and validation cohorts was area under the summary receiver operating characteristic curve (AUC) = 0.863, 95% confidence interval (CI): 0.8-0.911 and 0.815, 95% CI: 0.663-0.919, respectively. And the combined model outperformed the clinical model in both training and validation cohorts (AUC = 0.863 vs 0.749, 0.815 vs 0.627, P = .0022, .0302), outperformed the Rad-score model only in training cohorts (AUC = 0.863 vs 0.819, P = .0283). The combined model had highest net benefit and showed good diagnostic accuracy. The combined model incorporating Rad-score and clinical factors could provide a preoperative differentiation of TD from LNM and guide clinicians in making individualized treatment strategy for patients with RC.

Predicting tumor deposits in rectal cancer: a combined deep learning model using T2-MR imaging and clinical features.

BACKGROUND: Tumor deposits (TDs) are associated with poor prognosis in rectal cancer (RC). This study aims to develop and validate a deep learning (DL) model incorporating T2-MR image and clinical factors for the preoperative prediction of TDs in RC patients. METHODS AND METHODS: A total of 327 RC patients with pathologically confirmed TDs status from January 2016 to December 2019 were retrospectively recruited, and the T2-MR images and clinical variables were collected. Patients were randomly split into a development dataset (n = 246) and an independent testing dataset (n = 81). A single-channel DL model, a multi-channel DL model, a hybrid DL model, and a clinical model were constructed. The performance of these predictive models was assessed by using receiver operating characteristics (ROC) analysis and decision curve analysis (DCA). RESULTS: The areas under the curves (AUCs) of the clinical, single-DL, multi-DL, and hybrid-DL models were 0.734 (95% CI, 0.674-0.788), 0.710 (95% CI, 0.649-0.766), 0.767 (95% CI, 0.710-0.819), and 0.857 (95% CI, 0.807-0.898) in the development dataset. The AUC of the hybrid-DL model was significantly higher than the single-DL and multi-DL models (both p < 0.001) in the development dataset, and the single-DL model (p = 0.028) in the testing dataset. Decision curve analysis demonstrated the hybrid-DL model had higher net benefit than other models across the majority range of threshold probabilities. CONCLUSIONS: The proposed hybrid-DL model achieved good predictive efficacy and could be used to predict tumor deposits in rectal cancer. CRITICAL RELEVANCE STATEMENT: The proposed hybrid-DL model achieved good predictive efficacy and could be used to predict tumor deposits in rectal cancer. KEY POINTS: • Preoperative non-invasive identification of TDs is of great clinical significance. • The combined hybrid-DL model achieved good predictive efficacy and could be used to predict tumor deposits in rectal cancer. • A preoperative nomogram provides gastroenterologist with an accurate and effective tool.

Gold nanoparticles assembling on smooth silver spheres for surface-enhanced Raman spectroscopy.

A simple and cost-effective chemical method was introduced to assemble gold (Au) nanoparticles on smooth silver (Ag) spheres for realizing surface-enhanced Raman scattering (SERS) enhancement by the replacement reaction between chloroauric acid and Ag spheres. In addition, the Ag-Au core-shell spheres were fabricated when a certain amount of chloroauric acid was used in the reaction solution. We found that the Ag particles decorated with small Au nanoparticles demonstrated the strongest SERS enhancement, while Ag-Au core-shell spheres showed the weakest enhancement.

Diagnostic performance of mono-exponential DWI versus diffusion kurtosis imaging in breast lesions: A meta-analysis.

BACKGROUND: This meta-analysis aimed to explore the diagnostic value of diffusion kurtosis imaging (DKI) compared to mono-exponential diffusion weighted imaging (DWI) in the diagnosis of breast cancer. METHODS: A systematic electronic literature search (up to September 2020) was conducted for published English-language studies comparing the diagnostic values of DKI and DWI for the detection of breast cancer. The data of mean kurtosis (MK), mean diffusivity (MD), and apparent diffusion coefficient (ADC) were extracted to construct 2 × 2 contingency tables. The pooled sensitivities, specificities, and areas under the receiver operating characteristic curve (AUCs) were compared between DKI and DWI in the diagnosis of breast cancer. RESULTS: Eight studies were finally included, with a total of 771 patients in the same population. Pooled sensitivities were 82.0% [95% confidence interval (95% CI), 78.2-85.3%] for ADC, 87.3% (95% CI, 83.9-90.1%) for MK, and 83.9% (95% CI, 80.2-87.1%) for MD. Pooled specificities were 81.1% (95% CI, 76.7-84.9%) for ADC, 85.1% (95% CI, 81.1-88.5%) for MK, and 83.2% (95% CI, 79.0-86.8%) for MD. According to the summary receiver operator characteristic curve analyses, the AUCwas 0.901 for ADC, 0.930 for MK, and 0.918 for MD (ADC vs MK, P = .353; ADC vs MD, P = .611). No notable publication bias was found, while significant heterogeneity was observed. CONCLUSIONS: Although DKI is feasible for identifying breast cancer, MD and MK offer similar diagnostic performance to ADC values. Thus, we recommend that DKI should not be included in the routine evaluation of breast lesions now.

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Molybdenum disulfide (MoS2) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS2 because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance. Herein, we report the growth of Nb-doping large-area monolayer MoS2 by a one-step salt-assisted chemical vapor deposition method. Electrical measurements indicate that Nb doping suppresses n-type conductivity in MoS2 and shows an ambipolar transport behavior after annealing under the sulfur atmosphere, which highlights the p-type doping effect via Nb, corresponding to the density functional theory calculations with Fermi-level shifting to valence band maximum. This work provides a promising approach of two-dimensional materials in electronic and optoelectronic applications.