RESUMEN
2D Ruddlesden-Popper (RP) perovskites have been intensively investigated due to their superior stability and outstanding optoelectrical properties. However, investigations on 2D RP perovskites are mainly focused on A-site substituted perovskites and few reports are on X-site substituted perovskites especially in X-ray detection field. Here, X-site substituted 2D RP perovskite Cs2 Pb(SCN)2 Br2 polycrystalline wafers are prepared and systematically studied for X-ray detection. The obtained wafers show a large resistivity of 2.0 × 1010 Ω cm, a high ion activation energy of 0.75 eV, a small current drift of 2.39 × 10-6 nA cm-1 s-1 V-1 , and charge carrier mobility-lifetime product under X-ray as high as 1.29 × 10-4 cm2 V-1 . These merits enable Cs2 Pb(SCN)2 Br2 wafer detectors with a sensitivity of 216.3 µC Gyair -1 cm-2 , a limit of detection of 42.4 nGyair s-1 , and good imaging ability with high spatial resolution of 1.08 lp mm-1 . In addition, Cs2 Pb(SCN)2 Br2 wafer detectors demonstrate excellent operational stability under high working field up to 2100 V cm-1 after continuous X-ray irradiation with a total dose of 45.2 Gyair . The promising features such as short octahedral spacing and weak ion migration will open up a new perspective and opportunity for SCN-based 2D perovskites in X-ray detection.
RESUMEN
Organometal halide perovskite single crystals (SCs) are the most promising candidates for the next generation of radiation detection materials. However, surface defects severely affect their detection performance and limit further applications. Here, we identified the surface defect types of FAPbBr3 SCs and employed phenethylammonium iodide (PEAI) solution to treat the crystal surface and to investigate their effects on ion migration, photoelectric performance, and X-ray detection performance. Our experimental results demonstrated that the surface defects, such as the metallic Pb and Br vacancies, can be effectively passivated by both the PEAI and the two-dimensional (2D) PEA2PbI4 layers. The PEAI layer can elongate the carrier lifetime, lower the trap density, and suppress ion migration in FAPbBr3 SCs. The 2D PEA2PbI4 layer can form a dense and full surface coverage, suppress ion migration, and lower the dark current of the SCs. The X-ray sensitivity of the PEAI-passivated FAPbBr3 SC detectors is 227.93 µCGyair-1 cm-2, which is an order of magnitude higher than that of the pristine FAPbBr3 SC detectors. This work demonstrates that surface treatment plays a critical role in the crystal quality and the X-ray detection performance of SCs.
RESUMEN
The low electrical conductivity and the high surface defect density of the TiO2 electron transport layer (ETL) limit the quality of the following perovskite (PVK) layers and the power conversion efficiency (PCE) of corresponding perovskite solar cells (PSCs). Sulfur was reported as an effective element to passivate the TiO2 layer and improve the PCE of PSCs. In this work, we further investigate the effect of chemical valences of sulfur on the performance of TiO2/PVK interfaces, CsFAMA PVK layers, and solar cells using TiO2 ETL layers treated with Na2S, Na2S2O3, and Na2SO4, respectively. Experimental results show that the Na2S and Na2S2O3 interfacial layers can enlarge the grain size of PVK layers, reduce the defect density at the TiO2/PVK interface, and improve the device efficiency and stability. Meanwhile, the Na2SO4 interfacial layer leads to a smaller perovskite grain size and a slightly degraded TiO2/PVK interface and device performance. These results indicate that S2- can obviously improve the quality of TiO2 and PVK layers and TiO2/PVK interfaces, while SO42- has little effects, even negative effects, on PSCs. This work can deepen the understanding of the interaction between sulfur and the PVK layer and may inspire further progress in the surface passivation field.