Hydrophobic Hydrogen-Bonded Polymer Network for Efficient and Stable Perovskite/Si Tandem Solar Cells.

The pursuit of highly efficient and stable wide-band gap (WBG) perovskite solar cells (PSCs), especially for monolithic perovskite/silicon tandem devices, is a key focus in achieving the commercialization of perovskite photovoltaics. In this study, we initially designed poly(ionic liquid)s (PILs) with varying alkyl chain lengths based on density functional theory calculations. Results pinpoint that PILs with longer alkyl chain lengths tend to exhibit more robust binding energy with the perovskite structure. Then we synthesized the PILs to craft a hydrophobic hydrogen-bonded polymer network (HHPN) that passivates the WBG perovskite/electron transport layer interface, inhibits ion migration and serves as a barrier layer against water and oxygen ingression. Accordingly, the HHPN effectively curbs nonradiative recombination losses while facilitating efficient carrier transport, resulting in substantially enhanced open-circuit voltage (Voc ) and fill factor. As a result, the optimized single-junction WBG PSC achieves an impressive efficiency of 23.18 %, with Voc as high as 1.25 V, which is the highest reported for WBG (over 1.67 eV) PSCs. These devices also demonstrate outstanding thermostability and humidity resistance. Notably, this versatile strategy can be extended to textured perovskite/silicon tandem cells, reaching a remarkable efficiency of 28.24 % while maintaining exceptional operational stability.

Multifunctional Buffer Layer Engineering for Efficient and Stable Wide-Bandgap Perovskite and Perovskite/Silicon Tandem Solar Cells.

Inverted perovskite solar cells (PSCs) are preferred for tandem applications due to their superior compatibility with diverse bottom solar cells. However, the solution processing and low formation energy of perovskites inevitably lead to numerous defects at both the bulk and interfaces. We report a facile and effective strategy for precisely modulating the perovskite by incorporating AlOx deposited by atomic layer deposition (ALD) on the top interface. We find that Al3+ can not only infiltrate the bulk phase and interact with halide ions to suppress ion migration and phase separation but also regulate the arrangement of energy levels and passivate defects on the perovskite surface and grain boundaries. Additionally, ALD-AlOx exhibits an encapsulation effect through a dense interlayer. Consequently, the ALD-AlOx treatment can significantly improve the power conversion efficiency (PCE) to 21.80 % for 1.66 electron volt (eV) PSCs. A monolithic perovskite-silicon TSCs using AlOx-modified perovskite achieved a PCE of 28.5 % with excellent photothermal stability. More importantly, the resulting 1.55 eV PSC and module achieved a PCE of 25.08 % (0.04 cm2) and 21.01 % (aperture area of 15.5 cm2), respectively. Our study provides an effective way to efficient and stable wide-band gap perovskite for perovskite-silicon TSCs and paves the way for large-area inverted PSCs.

Application of interface treatment at different positionp-nc-Si:H hole collector of silicon heterojunction cells.

The hole collector in silicon heterojunction cells serves not only as an integral component of thep/njunction, determining the strength of the built-in electric field, but also as a layer responsible for hole transport, thereby affecting carrier transport capacity. To enhance carrier extraction and transport properties of the hole collector, various interface treatments have been employed onp-type nanocrystalline (p-nc-Si:H) hole collectors. Through an examination of characteristics such as dark conductivity, crystallinity, and contact resistance, the impact of interface treatment onp-nc-Si:H hole collectors is clarified. Furthermore, considering distinct requirements for the hole collector at different locations, interface treatment processes are optimized accordingly. The introduction of interface treatment onp-nc-Si:H hole collectors has demonstrated significant enhancement of both front and rear junction cell efficiencies, which increased from 17.74% to 21.61% and from 16.83% to 20.92%, respectively.

Efficient and Stable Inverted Perovskite Solar Modules Enabled by Solid-Liquid Two-Step Film Formation.

A considerable efficiency gap exists between large-area perovskite solar modules and small-area perovskite solar cells. The control of forming uniform and large-area film and perovskite crystallization is still the main obstacle restricting the efficiency of PSMs. In this work, we adopted a solid-liquid two-step film formation technique, which involved the evaporation of a lead iodide film and blade coating of an organic ammonium halide solution to prepare perovskite films. This method possesses the advantages of integrating vapor deposition and solution methods, which could apply to substrates with different roughness and avoid using toxic solvents to achieve a more uniform, large-area perovskite film. Furthermore, modification of the NiOx/perovskite buried interface and introduction of Urea additives were utilized to reduce interface recombination and regulate perovskite crystallization. As a result, a large-area perovskite film possessing larger grains, fewer pinholes, and reduced defects could be achieved. The inverted PSM with an active area of 61.56 cm2 (10 × 10 cm2 substrate) achieved a champion power conversion efficiency of 20.56% and significantly improved stability. This method suggests an innovative approach to resolving the uniformity issue associated with large-area film fabrication.

Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells.

Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100 °C shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag-contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX's hole selectivity and passivation ability.

Interfacial Engineering of Cu2O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al2O3 Passivation Layer.

Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cells with cuprous oxide (Cu2O) hole-selective contacts are demonstrated. The direct p-Si/Cu2O contact leads to a substoichiometric SiOx interlayer and diffusion of Cu into the silicon substrate, which would generate a deep-level impurity behaving as carrier recombination centers. An Al2O3 layer is subsequently employed at the p-Si/Cu2O interface, which not only serves as a passivating and tunneling layer but also suppresses the redox reaction and Cu diffusion at the Si/Cu2O interface. In conjunction with the high work function of Au and the superior optical property of Ag, a power conversion efficiency up to 19.71% is achieved with a p-Si/Al2O3/Cu2O/Au/Ag rear contact. This work provides a strategy for reducing interfacial defects and lowering energy barrier height in passivating contact solar cells.

Bilayer MoOX/CrOX Passivating Contact Targeting Highly Stable Silicon Heterojunction Solar Cells.

Molybdenum oxide (MoOX, X < 3) has been successfully demonstrated as an efficient passivating hole-selective contact in crystalline Si (c-Si) heterojunction solar cells because of its large bandgap (∼3.2 eV) and work function (∼6.9 eV). However, the severe performance degradation coming from the instability of the MoOX and its interfaces has not been well addressed. In this work, we started with a c-Si(p)/MoOX heterojunction solar cell that yielded a power conversion efficiency (PCE) of 15.86%, in which the MoOX film was synthesized by industry-compatible atomic layer deposition (ALD). The initial PCE dropped to 10.20% after 2 days because of severe migration of O and Ag at the MoOX/Ag interface. We solved this by the insertion of a CrOX layer between the MoOX layer and the Ag electrode. The solar cell was found to be stable for more than 8 months in air because of the suppression of interface degradation. Our work demonstrates an effective way of improving the stability of silicon solar cells with transition metal oxide carrier selective contacts.

High Weight-Specific Power Density of Thin-Film Amorphous Silicon Solar Cells on Graphene Papers.

Flexible thin-film solar cells with high weight-specific power density are highly desired in the emerging portable/wearable electronic devices, solar-powered vehicles, etc. The conventional flexible metallic or plastic substrates are encountered either overweight or thermal and mechanical mismatch with deposited films. In this work, we proposed a novel substrate for flexible solar cells based on graphene paper, which possesses the advantages of being lightweight and having a high-temperature tolerance and high mechanical flexibility. Thin-film amorphous silicon (a-Si:H) solar cells were constructed on such graphene paper, whose power density is 4.5 times higher than that on plastic polyimide substrates. In addition, the a-Si:H solar cells present notable flexibility whose power conversion efficiencies show little degradation when the solar cells are bent to a radius as small as 14 mm for more than 100 times. The application of this unique flexible substrate can be extended to CuInGaSe and CdTe solar cells and other thin-film devices requiring high-temperature processing.

High Performance of PEDOT:PSS/n-Si Solar Cells Based on Textured Surface with AgNWs Electrodes.

Hybrid heterojunction solar cells (HHSCs) have gained extensive research and attention due to simple device structure and low-cost technological processes. Here, HHSCs are presented based on a highly transparent conductive polymer poly(3,4ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) directly spin-coated on an n-type crystalline silicon with microscale surface textures, which are prepared by traditional chemical etching. We have studied interface properties between PEDOT:PSS and textured n-Si by varying coating conditions. Final power conversion efficiency (PCE) could arrive at 8.54% by these simple solution-based fabrication processes. The high conversion efficiency is attributed to the fully conformal contact between PEDOT:PSS film and textured silicon. Furthermore, the reflectance of the PEDOT:PSS layer on textured surface is analyzed by changing film thickness. In order to improve the performance of the device, silver nanowires were employed as electrodes because of its better optical transmittance and electrical conductivity. The highest PCE of 11.07% was achieved which displayed a 29.6% enhancement compared with traditional silver electrodes. These findings imply that the combination of PEDOT:PSS film and silver nanowire transparent electrodes pave a promising way for realizing high-efficiency and low-cost solar cells.

Morphology Defects Guided Pore Initiation during the Formation of Porous Anodic Alumina.

Aluminum (Al) anodization leads to formation of porous structures with a broad spectrum of applications. Naturally or intentionally created defects on Al surfaces can greatly affect pore initiation. However, there is still a lack of systematic understanding on the defect dependent morphology evolution. In this paper, anodization processes on unpolished, polished, and nanoimprinted Al substrates are investigated under high voltages up to 600 V in various acid solutions. A porous structure is obtained on the unpolished and nanoimprinted Al foils with rough surface texture, whereas a compact film can be rationally obtained on the polished Al foil with a highly smooth surface. The observation of surface roughness dependent oxide film morphology evolution could be originated from the high voltages, which increases the threshold requirement of defect size or density for the pore initiation. Electrostatics simulation results indicate that inhomogeneous electric field and its corresponding localized high current induced by the surface roughness facilitate the initiation of nanopores. In addition, the porous films are utilized as templates to produce polydimethylsiloxane nanocone and submicrowire arrays. The nanoarrays with different aspect ratios present tunable wettability with the contact angles ranging from 144.6° to 56.7°, which hold promising potentials in microfluidic devices and self-cleaning coatings.