RESUMEN
Flexible optoelectronic devices attract considerable attention due to their prominent role in creating novel wearable apparatus for bionics, robotics, health care, and so forth. Although bulk single-crystalline perovskite-based materials are well-recognized for the high photoelectric conversion efficiency than the polycrystalline ones, their stiff and brittle nature unfortunately prohibits their application for flexible devices. Here, we introduce ultrathin single-crystalline perovskite film as the active layer and demonstrate a high-performance flexible photodetector with prevailing bending reliability. With a much-reduced thickness of 20 nm, the photodetector made of this ultrathin film can achieve a significantly increased responsivity as 5600A/W, 2 orders of magnitude higher than that of recently reported flexible perovskite photodetectors. The demonstrated 0.2 MHz 3 dB bandwidth further paves the way for high-speed photodetection. Notably, all its optoelectronic characteristics resume after being bent over thousands of times. These results manifest the great potential of single-crystalline perovskite ultrathin films for developing wearable and flexible optoelectronic devices.
RESUMEN
Spin-momentum locking is a direct consequence of bulk topological order and provides a basic concept to control a carrier's spin and charge flow for new exotic phenomena in condensed matter physics. However, up to date the research on spin-momentum locking solely focuses on its in-plane transport properties. Here, we report an emerging out-of-plane radiation feature of spin-momentum locking in a non-Hermitian topological photonic system and demonstrate a high performance topological vortex laser based on it. We find that the gain saturation effect lifts the degeneracy of the paired counterpropagating spin-momentum-locked edge modes enabling lasing from a single topological edge mode. The near-field spin and orbital angular momentum of the topological edge mode lasing has a one-to-one far-field radiation correspondence. The methodology of probing the near-field topology feature by far-field lasing emission can be used to study other exotic phenomena. The device can lead to applications in superresolution imaging, optical tweezers, free-space optical sensing, and communication.
RESUMEN
We report small molecular PROTAC compounds targeting the androgen receptor N-terminal domain (AR-NTD), which were obtained by tethering AR-NTD antagonists and different classes of E3 ligase ligands through chemical linkers. A representative compound, BWA-522, effectively induces degradation of both AR-FL and AR-V7 and is more potent than the corresponding antagonist against prostate cancer (PC) cells in vitro. We have shown that the degradation of AR-FL and AR-V7 proteins by BWA-522 can suppress the expression of AR downstream proteins and induce PC cell apoptosis. BWA-522 achieves 40.5% oral bioavailability in mice and 69.3% in beagle dogs. In a LNCaP xenograft model study, BWA-522 was also proved to be an efficacious PROTAC degrader, resulting in 76% tumor growth inhibition after oral administration of a dose of 60 mg/kg. This study indicates that BWA-522 is a promising AR-NTD PROTAC for the treatment of AR-FL- and AR-V7-dependent tumors.
Asunto(s)
Neoplasias de la Próstata Resistentes a la Castración , Neoplasias de la Próstata , Quimera Dirigida a la Proteólisis , Animales , Perros , Humanos , Masculino , Ratones , Antagonistas de Receptores Androgénicos/farmacología , Antagonistas de Receptores Androgénicos/uso terapéutico , Antagonistas de Receptores Androgénicos/química , Línea Celular Tumoral , Proliferación Celular , Neoplasias de la Próstata/patología , Neoplasias de la Próstata Resistentes a la Castración/tratamiento farmacológico , Receptores Androgénicos/metabolismo , Ubiquitina-Proteína Ligasas , Quimera Dirigida a la Proteólisis/química , Quimera Dirigida a la Proteólisis/farmacologíaRESUMEN
Modern electronic and photonic devices rely on single-crystalline thin film semiconductors for high performance and reproducibility. The emerging halide perovskites have extraordinary electronic and photonic properties and can be synthesized via low cost solution-based methods. They have been used in a variety of devices with performance approaching or over the devices based on conventional materials. However, their solution based growth method is intrinsically challenge to grow large scale single-crystalline thin film due to the random nucleation and isotropous growth of the crystal. Here, we report the growth of centimeter-scale perovskite single-crystalline thin films by controlling the nucleation density and growth rate of the crystal under a spatially confined growth condition. The hydrophobic treatment on substrates inhibits nucleation and accelerates the growth of single-crystalline thin film, providing enough space for initial nucleus growing up quickly without touching each other. Single-crystalline perovskite thin-film with an aspect ratio of 1000 (1 cm in side length, 10 µm in thickness) has been successfully grown. The low trap density and the high mobility of the as-grown thin film show a high crystallinity. The photodetector based on the perovskite thin film has achieved a gain ~ 104, benefitting from the short transit time of the carries due to the high mobility and thin thickness of the active layer. Our work opens up a new route to grow large scale perovskite single-crystalline thin films, providing a platform to develop high- performance devices.
RESUMEN
Topological insulators are materials that behave as insulators in the bulk and as conductors at the edge or surface due to the particular configuration of their bulk band dispersion. However, up to date possible practical applications of this band topology on materials' bulk properties have remained abstract. Here, we propose and experimentally demonstrate a topological bulk laser. We pattern semiconductor nanodisk arrays to form a photonic crystal cavity showing topological band inversion between its interior and cladding area. In-plane light waves are reflected at topological edges forming an effective cavity feedback for lasing. This band-inversion-induced reflection mechanism induces single-mode lasing with directional vertical emission. Our topological bulk laser works at room temperature and reaches the practical requirements in terms of cavity size, threshold, linewidth, side-mode suppression ratio and directionality for most practical applications according to Institute of Electrical and Electronics Engineers and other industry standards. We believe this bulk topological effect will have applications in near-field spectroscopy, solid-state lighting, free-space optical sensing and communication.
RESUMEN
With the goals of faster coherent light sources with lower power consumption, laser miniaturization has been intensively pursued in the past four decades. Novel microscale cavities with efficient feedback and distinct emission profiles are essential for excellent performance of laser devices and for exploring their new functionalities. Here, for the first time, well-defined high-quality tetrahedron-shaped CsPbBr3 perovskite microcavities with smooth surfaces were synthesized via the vapor growth method. A room-temperature high-performance tetrahedral microlaser was realized based on CsPbBr3 perovskite single crystals. The three-dimensional total internal reflection mode inside the tetrahedral cavity led to a high-performance microlaser with a linewidth of only â¼0.3 nm at 538 nm emission wavelength and a unique profile with three emission beams into free space with triangular symmetry. In addition, the perovskite tetrahedral microlasers could be pumped by two-photon absorption with threshold only about 2.5 times higher than that of a one-photon laser. The high-performance tetrahedral microlaser with a distinct emission profile enriches the microscale laser family and may find exceptional applications in optical manipulation, communication and on-chip beam steering.
RESUMEN
The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.