Orbital Fulde-Ferrell-Larkin-Ovchinnikov state in an Ising superconductor.

In superconductors possessing both time and inversion symmetries, the Zeeman effect of an external magnetic field can break the time-reversal symmetry, forming a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state characterized by Cooper pairings with finite momentum1,2. In superconductors lacking (local) inversion symmetry, the Zeeman effect may still act as the underlying mechanism of FFLO states by interacting with spin-orbit coupling (SOC). Specifically, the interplay between the Zeeman effect and Rashba SOC can lead to the formation of more accessible Rashba FFLO states that cover broader regions in the phase diagram3-5. However, when the Zeeman effect is suppressed because of spin locking in the presence of Ising-type SOC, the conventional FFLO scenarios are no longer effective. Instead, an unconventional FFLO state is formed by coupling the orbital effect of magnetic fields with SOC, providing an alternative mechanism in superconductors with broken inversion symmetries6-8. Here we report the discovery of such an orbital FFLO state in the multilayer Ising superconductor 2H-NbSe2. Transport measurements show that the translational and rotational symmetries are broken in the orbital FFLO state, providing the hallmark signatures of finite-momentum Cooper pairings. We establish the entire orbital FFLO phase diagram, consisting of a normal metal, a uniform Ising superconducting phase and a six-fold orbital FFLO state. This study highlights an alternative route to achieving finite-momentum superconductivity and provides a universal mechanism to preparing orbital FFLO states in similar materials with broken inversion symmetries.

Correlated States in Strained Twisted Bilayer Graphenes Away from the Magic Angle.

Graphene moiré superlattice formed by rotating two graphene sheets can host strongly correlated and topological states when flat bands form at so-called magic angles. Here, we report that, for a twisting angle far away from the magic angle, the heterostrain induced during stacking heterostructures can also create flat bands. Combining a direct visualization of strain effect in twisted bilayer graphene moiré superlattices and transport measurements, features of correlated states appear at "non-magic" angles in twisted bilayer graphene under the heterostrain. Observing correlated states in these "non-standard" conditions can enrich the understanding of the possible origins of the correlated states and widen the freedom in tuning the moiré heterostructures and the scope of exploring the correlated physics in moiré superlattices.

Light Controllable Electronic Phase Transition in Ionic Liquid Gated Monolayer Transition Metal Dichalcogenides.

Ionic liquid gating has proved to be effective in inducing emergent quantum phenomena such as superconductivity, ferromagnetism, and topological states. The electrostatic doping at two-dimensional interfaces relies on ionic motion, which thus is operated at sufficiently high temperature. Here, we report the in situ tuning of quantum phases by shining light on an ionic liquid-gated interface at cryogenic temperatures. The light illumination enables flexible switching of the quantum transition in monolayer WS2 from an insulator to a superconductor. In contrast to the prevailing picture of photoinduced carriers, we find that in the presence of a strong interfacial electric field conducting electrons could escape from the surface confinement by absorbing photons, mimicking the field emission. Such an optical tuning tool in conjunction with ionic liquid gating greatly facilitates continuous modulation of carrier densities and hence electronic phases, which would help to unveil novel quantum phenomena and device functionality in various materials.

Full superconducting dome of strong Ising protection in gated monolayer WS2.

Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as a higher transition temperature and a stronger critical field. Nevertheless, besides being unstable in air, the weak tunability in these intrinsically metallic monolayers has limited the exploration of monolayer superconductivity, hindering their potential in electronic applications (e.g., superconductor-semiconductor hybrid devices). Here we show that using field effect gating, we can induce superconductivity in monolayer WS2 grown by chemical vapor deposition, a typical ambient-stable semiconducting transition metal dichalcogenide (TMD), and we are able to access a complete set of competing electronic phases over an unprecedented doping range from band insulator, superconductor, to a reentrant insulator at high doping. Throughout the superconducting dome, the Cooper pair spin is pinned by a strong internal spin-orbit interaction, making this material arguably the most resilient superconductor in the external magnetic field. The reentrant insulating state at positive high gating voltages is attributed to localization induced by the characteristically weak screening of the monolayer, providing insight into many dome-like superconducting phases observed in field-induced quasi-2D superconductors.

Logical modeling of thymus and natural killer lymphocyte differentiation.

Thymus (T) and natural killer (NK) lymphocytes are important barriers against diseases. Therefore, it is necessary to understand regulatory mechanisms related to the cell fate decisions involved in the production of these cells. Although some individual information related to T and NK lymphocyte cell fate decisions have been revealed, the related network and its dynamical characteristics still have not been well understood. By integrating individual information and comparing with experimental data, we construct a comprehensive regulatory network and a logical model related to T and NK lymphocyte differentiation. We aim to explore possible mechanisms of how each lineage differentiation is realized by systematically screening individual perturbations. When determining the perturbation strategies, the state transition can be used to identify the roles of specific genes in cell type selection and reprogramming. In agreement with experimental observations, the dynamics of the model correctly restates the cell differentiation processes from common lymphoid progenitors to CD4+ T cells, CD8+ T cells, and NK cells. Our analysis reveals that some specific perturbations can give rise to directional cell differentiation or reprogramming. We test our in silico results by using known experimental observations. The integrated network and the logical model presented here might be a good candidate for providing qualitative mechanisms of cell fate specification involved in T and NK lymphocyte cell fate decisions.

Highly Conductive Metallic State and Strong Spin-Orbit Interaction in Annealed Germanane.

Similar to carbon, germanium exists in various structures such as three-dimensional crystalline germanium and germanene, a two-dimensional germanium atomic layer. Regarding the electronic properties, they are either semiconductors or Dirac semimetals. Here, we report a highly conductive metallic state in thermally annealed germanane (hydrogen-terminated germanene, GeH), which shows a resistivity of ∼10-7 Ω·m that is orders of magnitude lower than any other allotrope of germanium. By comparing the resistivity, Raman spectra, and thickness change measured by AFM, we suggest the highly conductive metallic state is associated with the dehydrogenation during heating, which likely transforms germanane thin flakes to multilayer germanene. In addition, weak antilocalization is observed, serving as solid evidence for strong spin-orbit interaction (SOI) in germanane/germanene. Our study opens a possible new route to investigate the electrical transport properties of germanane/germanene, and the large SOI might provide the essential ingredients to access their topological states predicted theoretically.

Inducing lasing in organic materials with low optical gain by three-dimensional plasmonic nanocavity arrays.

Lasing in organic media with very low gain has been pursued for a long time in optoelectronics. Here, we experimentally demonstrate that plasmonic lasing in the visible regime at room temperature can be achieved by hybridizing active media of very low optical gain such as ionic liquid and polymethylmethacrylate with three-dimensional (3D) plasmonic metamaterials. The 3D nanostructure consists of a double-layer N-shaped silver wire-hole array with strongly coupled multiple hot spots densely packed in each unit cell. These hot spots overlap perfectly with the gain media, allowing efficient gain-plasmon coupling in subwavelength volumes. The periodic arrangement of hot spots, as the metal and dielectric are distributed in an alternate manner along both transverse and vertical directions, results in ultrastrong suppression of scattering losses. In addition, the lasing characteristics, including threshold, intensity and polarization can be controlled by the lattice constant and geometry of metamaterials. Such a plasmonic nanolaser proves to be of low threshold and low gain requirement, providing an essential step towards easy-processing organic based optoelectronics.

Extended Polymorphism of Two-Dimensional Material.

When controlling electronic properties of bulk materials, we usually assume that the basic crystal structure is fixed. However, in two-dimensional (2D) materials, atomic structure or polymorph is attracting growing interest as a controlling parameter to functionalize their properties. Various polymorphs can exist in transition metal dichalcogenides (TMDCs) from which 2D materials are generated, and polymorphism has drastic impacts on the electronic states. Here we report the discovery of an unprecedented polymorph of a TMDC 2D material. By mechanical exfoliation, we made thin flakes from a single crystal of 2Ha-type tantalum disulfide (TaS2), a metallic TMDC with a charge-density-wave (CDW) phase. Microbeam X-ray diffraction measurements and electrical transport measurements indicate that thin flakes possess a polymorph different from any one known in TaS2 bulk crystals. Moreover, the flakes with the unique polymorph displayed the dramatically enhanced CDW ordering temperature. The present results suggest the potential existence of diverse structural and electronic phases accessible only in 2D materials.

Accessing the transport properties of graphene and its multilayers at high carrier density.

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.

Ambipolar MoS2 thin flake transistors.

Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS(2), a member of the transition metal dichalcogenides, an archetypal layered material. The EDLT of the thin flake MoS(2) unambiguously displayed ambipolar operation, in contrast to its commonly known bulk property as an n-type semiconductor. High-performance transistor operation characterized by a large "ON" state conductivity in the order of ~mS and a high on/off ratio >10(2) was realized for both hole and electron transport. Hall effect measurements revealed mobility of 44 and 86 cm(2) V(-1) s(-1) for electron and hole, respectively. The hole mobility is twice the value of the electron mobility, and the density of accumulated carrier reached 1 × 10(14) cm(-2), which is 1 order of magnitude larger than conventional FETs with solid dielectrics. The high-density carriers of both holes and electrons can create metallic transport in the MoS(2) channel. The present result is not only important for device applications with new functionalities, but the method itself would also act as a protocol to study this class of material for a broader scope of possibilities in accessing their unexplored properties.

3D Nanostructuring of Phase-Change Materials Using Focused Ion Beam toward Versatile Optoelectronics Applications.

In recent years, phase-change materials have gained importance in nanophotonics and optoelectronics. Sizable optical contrast and added degree of freedom from phase switching drive the use of phase-change materials in various optical devices with outstanding results and potential for real-world applications. The local crystallization/amorphization of phase-change materials and the corresponding reflectance tuning by the crystallized/amorphized region size have potential applications, for example, for future dynamic display devices. Although the resolution is much higher than in current display devices, the pixel sizes in those devices are limited by the locally switchable structure size. Here, the spot sizes are further reduced by using ion beams instead of laser beams, dramatically increasing pixel density, demonstrating superior resolution. In addition, the power to sputter away materials can be utilized in creating nanostructures with relative height differences and local contrast. The experiment focuses on one archetypal phase-change material, Sb2 Se3 , prepared by pulsed-laser deposition on a reflective gold substrate. This study demonstrates that structural colors can be produced and reflectance tuning can be achieved by focused ion beam milling/sputtering of phase-change materials at the nanoscale. Furthermore, the local structuring of phase-change materials by focused ion beam can produce high-pixel-density display devices with superior resolutions.

Mechanical stimulation controls osteoclast function through the regulation of Ca2+-activated Cl- channel Anoctamin 1.

Mechanical force loading is essential for maintaining bone homeostasis, and unloading exposure can lead to bone loss. Osteoclasts are the only bone resorbing cells and play a crucial role in bone remodeling. The molecular mechanisms underlying mechanical stimulation-induced changes in osteoclast function remain to be fully elucidated. Our previous research found Ca2+-activated Cl- channel Anoctamin 1 (Ano1) was an essential regulator for osteoclast function. Here, we report that Ano1 mediates osteoclast responses to mechanical stimulation. In vitro, osteoclast activities are obviously affected by mechanical stress, which is accompanied by the changes of Ano1 levels, intracellular Cl- concentration and Ca2+ downstream signaling. Ano1 knockout or calcium binding mutants blunts the response of osteoclast to mechanical stimulation. In vivo, Ano1 knockout in osteoclast blunts loading induced osteoclast inhibition and unloading induced bone loss and. These results demonstrate that Ano1 plays an important role in mechanical stimulation induced osteoclast activity changes.

Strong anisotropic enhancement of photoluminescence in WS2 integrated with plasmonic nanowire array.

Layered transition metal dichalcogenides (TMDCs) have shown great potential for a wide range of applications in photonics and optoelectronics. Nevertheless, valley decoherence severely randomizes its polarization which is important to a light emitter. Plasmonic metasurface with a unique way to manipulate the light-matter interaction may provide an effective and practical solution. Here by integrating TMDCs with plasmonic nanowire arrays, we demonstrate strong anisotropic enhancement of the excitonic emission at different spectral positions. For the indirect bandgap transition in bilayer WS2, multifold enhancement can be achieved with the photoluminescence (PL) polarization either perpendicular or parallel to the long axis of nanowires, which arises from the coupling of WS2 with localized or guided plasmon modes, respectively. Moreover, PL of high linearity is obtained in the direct bandgap transition benefiting from, in addition to the plasmonic enhancement, the directional diffraction scattering of nanowire arrays. Our method with enhanced PL intensity contrasts to the conventional form-birefringence based on the aspect ratio of nanowire arrays where the intensity loss is remarkable. Our results provide a prototypical plasmon-exciton hybrid system for anisotropic enhancement of the PL at the nanoscale, enabling simultaneous control of the intensity, polarization and wavelength toward practical ultrathin photonic devices based on TMDCs.

Nonradiative Energy Transfer and Selective Charge Transfer in a WS2/(PEA)2PbI4 Heterostructure.

van der Waals heterostructures are currently the focus of intense investigation; this is essentially due to the unprecedented flexibility offered by the total relaxation of lattice matching requirements and their new and exotic properties compared to the individual layers. Here, we investigate the hybrid transition-metal dichalcogenide/2D perovskite heterostructure WS2/(PEA)2PbI4 (where PEA stands for phenylethylammonium). We present the first density functional theory (DFT) calculations of a heterostructure ensemble, which reveal a novel band alignment, where direct electron transfer is blocked by the organic spacer of the 2D perovskite. In contrast, the valence band forms a cascade from WS2 through the PEA to the PbI4 layer allowing hole transfer. These predictions are supported by optical spectroscopy studies, which provide compelling evidence for both charge transfer and nonradiative transfer of the excitation (energy transfer) between the layers. Our results show that TMD/2D perovskite (where TMD stands for transition-metal dichalcogenides) heterostructures provide a flexible and convenient way to engineer the band alignment.

Electrostatic and electrochemical nature of liquid-gated electric-double-layer transistors based on oxide semiconductors.

The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics because of the large interfacial capacitance coupling and its ability for high-density charge accumulation. Much effort has recently been devoted to the fundamental understanding and practical applications of such highly charged EDL interfaces. However, the intrinsic nature of the EDL charging, whether it is electrostatics or electrochemistry, and how to distinguish them are far from clear. Here, by combining electrical transport measurements with electrochemical impedance spectroscopy (EIS), we studied the charging mechanisms of highly charged EDL interfaces between an ionic liquid and oxide semiconductor, ZnO. The direct measure for mobile carriers from the Hall effect agreed well with that from the capacitance-voltage integration at 1 Hz, implying that the pseudocapacitance does not contribute to carrier transport at EDL interfaces. The temperature-frequency mapping of EIS was further demonstrated as a "phase diagram" to distinguish the electrostatic or electrochemical nature of such highly charged EDL interfaces with densities of up to 8 × 10(14) cm(-2), providing a guideline for electric-field-induced electronic phenomena and a simple method for distinguishing electrostatic and electrochemical charging in EDLTs not only based on a specific oxide semiconductor, ZnO, but also commonly applicable to all types of EDL interfaces with extremely high-density carrier accumulation.

Polarized resonant emission of monolayer WS2 coupled with plasmonic sawtooth nanoslit array.

Transition metal dichalcogenide (TMDC) monolayers have enabled important applications in light emitting devices and integrated nanophotonics because of the direct bandgap, spin-valley locking and highly tunable excitonic properties. Nevertheless, the photoluminescence polarization is almost random at room temperature due to the valley decoherence. Here, we show the room temperature control of the polarization states of the excitonic emission by integrating WS2 monolayers with a delicately designed metasurface, i.e. a silver sawtooth nanoslit array. The random polarization is transformed to linear when WS2 excitons couple with the anisotropic resonant transmission modes that arise from the surface plasmon resonance in the metallic nanostructure. The coupling is found to enhance the valley coherence that contributes to ~30% of the total linear dichroism. Further modulating the transmission modes by optimizing metasurfaces, the total linear dichroism of the plasmon-exciton hybrid system can approach 80%, which prompts the development of photonic devices based on TMDCs.

Photoemission spectroscopy study of structural defects in molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD).

The fingerprint of structural defects in CVD grown MoS2 was revealed by means of X-ray Photoelectron Spectroscopy (XPS). These defects can be partially healed by grafting thiol-functionalized molecules. The functionalization does not alter the semiconducting properties of MoS2 as confirmed by the photoluminescence spectra.

Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating.

Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interest since the emergence of spintronics. We report the reversible electrical switching of ferromagnetic (FM) states in platinum (Pt) thin films by introducing paramagnetic ionic liquid (PIL) as the gating media. The paramagnetic ionic gating controls the movement of ions with magnetic moments, which induces itinerant ferromagnetism on the surface of Pt films, with large coercivity and perpendicular anisotropy mimicking the ideal two-dimensional Ising-type FM state. The electrical transport of the induced FM state shows Kondo effect at low temperature, suggesting spatially separated coexistence of Kondo scattering beneath the FM interface. The tunable FM state indicates that paramagnetic ionic gating could serve as a versatile method to induce rich transport phenomena combining field effect and magnetism at PIL-gated interfaces.

Continuous Low-Bias Switching of Superconductivity in a MoS2 Transistor.

Engineering the properties of quantum electron systems, e.g., tuning the superconducting phase using low driving bias within an easily accessible temperature range, is of great interest for exploring exotic physical phenomena as well as achieving real applications. Here, the realization of continuous field-effect switching between superconducting and non-superconducting states in a few-layer MoS2 transistor is reported. Ionic-liquid gating induces the superconducting state close to the quantum critical point on the top surface of the MoS2 , and continuous switching between the super/non-superconducting states is achieved by HfO2 back gating. The superconducting transistor works effectively in the helium-4 temperature range and requires a gate bias as low as ≈10 V. The dual-gate device structure and strategy presented here can be easily generalized to other systems, opening new opportunities for designing high-performance 2D superconducting transistors.

Metallic ground state in an ion-gated two-dimensional superconductor.

Recently emerging two-dimensional (2D) superconductors in atomically thin layers and at heterogeneous interfaces are attracting growing interest in condensed matter physics. Here, we report that an ion-gated zirconium nitride chloride surface, exhibiting a dome-shaped phase diagram with a maximum critical temperature of 14.8 kelvin, behaves as a superconductor persisting to the 2D limit. The superconducting thickness estimated from the upper critical fields is ≅ 1.8 nanometers, which is thinner than one unit-cell. The majority of the vortex phase diagram down to 2 kelvin is occupied by a metallic state with a finite resistance, owing to the quantum creep of vortices caused by extremely weak pinning and disorder. Our findings highlight the potential of electric-field-induced superconductivity, establishing a new platform for accessing quantum phases in clean 2D superconductors.