RESUMEN
Numerous applications at the photon-starved regime require a free-space coupling single-photon detector with a large active area, low dark count rate (DCR), and superior time resolutions. Here, we developed a superconducting microstrip single-photon detector (SMSPD), with a large active area of 260 µm in diameter, a DCR of â¼5k c p s, and a low time jitter of â¼171p s, operated at a near-infrared of 1550 nm and a temperature of â¼2.0K. As a demonstration, we applied the detector to a single-pixel galvanometer scanning system and successfully reconstructed the object information in depth and intensity using a time-correlated photon counting technology.
RESUMEN
High-quality Co-doped BaFe2As2 thin films with thickness up to 2 µm were realized on flexible metal tapes with LaMnO3 as buffer layers fabricated by an ion beam-assisted deposition technique. Structural analysis indicates that increasing thickness does not compromise the film crystallinity, except for a small amount of impurities. Two types of thickness dependence of critical current density (J c) were found: one is almost thickness independent in the range of 0.6-1.5 µm and the other is highly thickness dependent. In addition, the maximum value for crucial current I c at 9 T and 4.2 K is about 55 A/12 mm-W for the 1.5-µm-thick film. Anisotropic Ginzburg-Landau scaling demonstrates that dominant pinning centers develop from correlated to uncorrelated with increasing film thickness. The further theoretical analysis shows that with film thickness increasing the pinning mechanism evolves progressively from a δl pinning to the δT c pinning mechanism.