RESUMEN
Bottom-up block copolymer (BCP) lithography mediated by self-assembly of polystyrene (PS)/poly-methyl methacrylate (PMMA) is widely used as an alternative patterning method for various deep nanoscale devices, such as optical devices and transistors, replacing conventional top-down photolithography. However, the nanoscale BCP mask features formed on the substrates after direct self-assembly of BCP tend to be easily damaged during exposure to the following plasma processing. In this study, silicon masked with a nanoscale BCP mask (PS) was etched by irradiating with a Cl2/Ar neutral beam in addition to a Cl2/Ar ion beam, and the effect of a Cl2/Ar neutral beam instead of a Cl2/Ar ion beam on damage to the PS mask and the silicon etch characteristics of nanodevices was investigated. The results show that the use of a neutral beam instead of an ion beam decreased degradation of the BCP mask during etching; therefore, a more anisotropic silicon etch profile in addition to improved etch selectivity of silicon compared to the BCP mask was observed. Moreover, by using the neutral beam, the sidewall roughness and sidewall angle also improved due to the decreased surface charge and reduced damage to the nanoscale PS mask resulting from use of a highly directional radical beam instead of a conventional ion-based beam.
RESUMEN
We investigate the effects of interfacial oxidation on the perpendicular magnetic anisotropy, magnetic damping, and spin-orbit torques in heavy-metal (Pt)/ferromagnet (Co or NiFe)/capping (MgO/Ta, HfOx, or TaN) structures. At room temperature, the capping materials influence the effective surface magnetic anisotropy energy density, which is associated with the formation of interfacial magnetic oxides. The magnetic damping parameter of Co is considerably influenced by the capping material (especially MgO) while that of NiFe is not. This is possibly due to extra magnetic damping via spin-pumping process across the Co/CoO interface and incoherent magnon generation (spin fluctuation) developed in the antiferromagnetic CoO. It is also observed that both antidamping and field-like spin-orbit torque efficiencies vary with the capping material in the thickness ranges we examined. Our results reveal the crucial role of interfacial oxides on the perpendicular magnetic anisotropy, magnetic damping, and spin-orbit torques.
RESUMEN
The orbital Hall effect describes the generation of the orbital current flowing in a perpendicular direction to an external electric field, analogous to the spin Hall effect. As the orbital current carries the angular momentum as the spin current does, injection of the orbital current into a ferromagnet can result in torque on the magnetization, which provides a way to detect the orbital Hall effect. With this motivation, we examine the current-induced spin-orbit torques in various ferromagnet/heavy metal bilayers by theory and experiment. Analysis of the magnetic torque reveals the presence of the contribution from the orbital Hall effect in the heavy metal, which competes with the contribution from the spin Hall effect. In particular, we find that the net torque in Ni/Ta bilayers is opposite in sign to the spin Hall theory prediction but instead consistent with the orbital Hall theory, which unambiguously confirms the orbital torque generated by the orbital Hall effect. Our finding opens a possibility of utilizing the orbital current for spintronic device applications, and it will invigorate researches on spin-orbit-coupled phenomena based on orbital engineering.