Routing light with ultrathin nanostructures beyond the diffraction limit.

An open nanostructure consisting of a periodic chain of subwavelength-nanoparticles for compressing and routing light beyond the diffraction limit is proposed. The open nanostructure is ultrathin and compact, with a size much smaller than the wavelength of light. We demonstrate that our ultrathin open nanostructure provides functions that can route and manipulate light at the subwavelength scale and can also sharply bend and split light beams below the diffraction limit while exhibiting broadband, incident-angle-tolerant, and robust against disorder. A physical picture based on all-angle self-collimation is presented to understand the manipulation of light using the ultrathin open nanostructure. Experimental and numerical observations validate our findings. This approach provides great flexibility in the design of nanophotonic devices for routing and manipulating light beyond the diffraction limit.

Experimental demonstration of in-plane negative-angle refraction with an array of silicon nanoposts.

Controlling an optical beam is fundamental in optics. Recently, unique manipulation of optical wavefronts has been successfully demonstrated by metasurfaces. However, these artificially engineered nanostructures have thus far been limited to operate on light beams propagating out-of-plane. The in-plane operation is critical for on-chip photonic applications. Here, we demonstrate an anomalous negative-angle refraction of a light beam propagating along the plane, by designing a thin dielectric array of silicon nanoposts. The circularly polarized dipoles induced by the high-permittivity nanoposts at the scattering resonance significantly shape the wavefront of the light beam and bend it anomalously. The unique capability of a thin line of the nanoposts for manipulating in-plane wavefronts makes the device extremely compact. The low loss all-dielectric structure is compatible with complementary metal-oxide semiconductor technologies, offering an effective solution for in-plane beam steering and routing for on-chip photonics.

A silicon-on-insulator polarization diversity scheme in the mid-infrared.

We propose a silicon-on-insulator (SOI) polarization diversity scheme in the mid-infrared wavelength range. In consideration of absorption loss in silicon dioxide (SiO2), the polarization splitter-rotator (PSR) is designed and optimized with silicon nitride (SiN) upper-cladding and SiO2 lower-cladding. This asymmetry allows the PSR, which consists of mode-conversion tapers and subsequent mode-sorting asymmetric Y-junctions, to be fabricated with a simple one-step etching process. Simulation shows that our PSR has good performance with low mode conversion loss (< 0.25 dB) and low crosstalk (< -18 dB) in a very large wavelength range from 4.0 µm to 4.4 µm. The PSR also exhibits large fabrication tolerance with respect to the size deviations in waveguide width, height and refractive index of the upper-cladding. Additionally, PSR devices based on Y-junctions with SiO2 upper-cladding, and SiN upper- and lower-claddings are designed for potential applications at shorter and longer wavelengths, respectively. These PSR devices could facilitate the development of silicon photonic devices in the mid-infrared.

Broadband and fabrication-tolerant on-chip scalable mode-division multiplexing based on mode-evolution counter-tapered couplers.

A broadband and fabrication-tolerant on-chip scalable mode-division multiplexing (MDM) scheme based on mode-evolution counter-tapered couplers is designed and experimentally demonstrated on a silicon-on-insulator (SOI) platform. Due to the broadband advantage offered by mode evolution, the two-mode MDM link exhibits a very large, -1 dB bandwidth of >180 nm, which is considerably larger than most of the previously reported MDM links whether they are based on mode-interference or evolution. In addition, the performance metrics remain stable for large-device width deviations from the designed valued by -60 nm to 40 nm, and for temperature variations from -25°C to 75°C. This MDM scheme can be readily extended to higher-order mode multiplexing and a three-mode MDM link is measured with less than -10 dB crosstalk from 1.46 to 1.64 µm wavelength range.

Design of a SiO2 top-cladding and compact polarization splitter-rotator based on a rib directional coupler.

A compact polarization splitter-rotator based on a silicon-on-insulator rib asymmetrical directional coupler with SiO2 top-cladding is proposed. Unlike previously reported PSRs which specifically required the top-cladding material to be different from the bottom cladding in order to break the symmetry of the waveguide cross-section, our proposed PSR has no such limitation on the top-cladding due to the horizontal asymmetry of the rib waveguide. In addition, the device is highly compact and has a total length as short as 24 µm. Numerical simulation shows that a high conversion efficiency of ~97% is obtained at the wavelength of 1550 nm. With the width variation of ± 15 nm and the gap variation of ± 50 nm, the PSR still has high ER of 12 dB at the cross-port, showing large fabrication tolerance. This device can be cascaded to improve the performance at the through port and an example of a two-stage PSR is presented. The mode conversion between the strip waveguide and the rib waveguide is also discussed.

Low-loss and low-crosstalk 8 × 8 silicon nanowire AWG routers fabricated with CMOS technology.

Low-loss and low-crosstalk 8 × 8 arrayed waveguide grating (AWG) routers based on silicon nanowire waveguides are reported. A comparative study of the measurement results of the 3.2 nm-channel-spacing AWGs with three different designs is performed to evaluate the effect of each optimal technique, showing that a comprehensive optimization technique is more effective to improve the device performance than a single optimization. Based on the comprehensive optimal design, we further design and experimentally demonstrate a new 8-channel 0.8 nm-channel-spacing silicon AWG router for dense wavelength division multiplexing (DWDM) application with 130 nm CMOS technology. The AWG router with a channel spacing of 3.2 nm (resp. 0.8 nm) exhibits low insertion loss of 2.32 dB (resp. 2.92 dB) and low crosstalk of -20.5~-24.5 dB (resp. -16.9~-17.8 dB). In addition, sophisticated measurements are presented including all-input transmission testing and high-speed WDM system demonstrations for these routers. The functionality of the Si nanowire AWG as a router is characterized and a good cyclic rotation property is demonstrated. Moreover, we test the optical eye diagrams and bit-error-rates (BER) of the de-multiplexed signal when the multi-wavelength high-speed signals are launched into the AWG routers in a system experiment. Clear optical eye diagrams and low power penalty from the system point of view are achieved thanks to the low crosstalk of the AWG devices.

Novel ultra-broadband polarization splitter-rotator based on mode-evolution tapers and a mode-sorting asymmetric Y-junction.

A novel silicon-on-insulator (SOI) polarization splitter-rotator is proposed based on mode-evolution tapers and a mode-sorting asymmetric Y-junction. The tapers are designed to adiabatically convert the input TM0 mode into the TE1 mode, which will evolve into the TE0 mode in the wide output arm while the input TE0 mode excites the TE0 mode in the narrow arm. The numerical simulation results show that the mode conversion efficiency increases with the lengths of the tapers and the Y-junction for the output waveguide widths in a large range. This proposed device has < 0.4 dB insertion loss with > 12 dB extinction ratio in an ultra-broad wavelength range from 1350 nm to 1750 nm. With such a broad operating bandwidth, this device offers potential applications for polarization diversity operating across every communication bands. Fabrication tolerance analysis is also performed in terms of the device width variation, the slab height variation and the variation of the upper-cladding refractive index.

Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplers and an assisted bi-level taper.

A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM(0) mode into the TE(1) mode, which will output as the TE(0) mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a < 0.5 dB insertion loss with < -17 dB crosstalk in C optical communication band. Fabrication tolerance analysis is also performed with respect to the deviations of MMI coupler width, PS width, slab height and upper-cladding refractive index, showing that this device could work well even when affected by considerable fabrication errors. With such a robust performance with a large bandwidth, this device offers potential applications for CMOS-compatible polarization diversity, especially in the booming 100 Gb/s coherent optical communications based on silicon photonics technology.

Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs.

In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. The experimental results demonstrate that irradiation-induced oxide-trap charges can modify the E-B junction barrier, and thereby make the common-emitter gain ß0 of the parasitic BJT in NMOS device increase, while decreasing it in a PMOS device. Additionally, irradiation-generated oxide-trap charges in shallow trench isolation (STI) elevate the surface electrostatic potential of the gate above the STI sidewall, thus providing an additional channel from the emitter to the collector. Moreover, these charges may generate parasitic reverse conductive paths at the STI/Si interface under high dose irradiation, thereby enhancing the leakage current in the front gate channel and diminishing the significance of the parasitic BJT. Under irradiation, the electric field intensity difference between two biases leads to higher ß0 of the parasitic BJT in PG-biased devices than in ON-biased ones. Furthermore, the lifting effect of irradiation on ß0 increases in wide or short channel irradiated devices, which can be explained using simulations and an emitter current crowding effect model.

Optical beam steering based on the symmetry of resonant modes of nanoparticles.

We report a phenomenon that an optical beam transmits in a negative direction when passing through a single array of high-refractive-index dielectric nanorods. The mechanism of the negative directional transmission is believed to be due to the symmetry of resonant modes in the dielectric nanoparticles. It is expected to find applications in designing compact optical components to achieve the on-chip beam steering in photonic circuits.