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The newly discovered nickelate superconductors so far only exist in epitaxial thin films synthesized by a topotactic reaction with metal hydrides1. This method changes the nickelates from the perovskite to an infinite-layer structure by deintercalation of apical oxygens1-3. Such a chemical reaction may introduce hydrogen (H), influencing the physical properties of the end materials4-9. Unfortunately, H is insensitive to most characterization techniques and is difficult to detect because of its light weight. Here, in optimally Sr doped Nd0.8Sr0.2NiO2H epitaxial films, secondary-ion mass spectroscopy shows abundant H existing in the form of Nd0.8Sr0.2NiO2Hx (x â 0.2-0.5). Zero resistivity is found within a very narrow H-doping window of 0.22 ≤ x ≤ 0.28, showing unequivocally the critical role of H in superconductivity. Resonant inelastic X-ray scattering demonstrates the existence of itinerant interstitial s (IIS) orbitals originating from apical oxygen deintercalation. Density functional theory calculations show that electronegative H- occupies the apical oxygen sites annihilating IIS orbitals, reducing the IIS-Ni 3d orbital hybridization. This leads the electronic structure of H-doped Nd0.8Sr0.2NiO2Hx to be more two-dimensional-like, which might be relevant for the observed superconductivity. We highlight that H is an important ingredient for superconductivity in epitaxial infinite-layer nickelates.
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The scaling of silicon metal-oxide-semiconductor field-effect transistors has followed Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents1. Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κ single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D field-effect transistors. Our perovskite membranes exhibit a desirable sub-one-nanometre CET with a low leakage current (less than 10-2 amperes per square centimetre at 2.5 megavolts per centimetre). We find that the van der Waals gap between strontium-titanium-oxide dielectrics and 2D semiconductors mitigates the unfavourable fringing-induced barrier-lowering effect resulting from the use of ultrahigh-κ dielectrics4. Typical short-channel transistors made of scalable molybdenum-disulfide films by chemical vapour deposition and strontium-titanium-oxide dielectrics exhibit steep subthreshold swings down to about 70 millivolts per decade and on/off current ratios up to 107, which matches the low-power specifications suggested by the latest International Roadmap for Devices and Systems5.
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The recombination of photoexcited electron-hole pairs greatly limits the degradation performance of photocatalysts. Ultrasonic cavitation and internal electric field induced by the piezoelectric effect are helpful for the separation of electron-hole pairs and degradation efficiency. The activated foam carbon (AFC) owing to its high surface area is often used as the substrate to grow catalysts to provide more reactive active sites. In this work, CuO@BaTiO3(CuO@BTO) heterostructure is prepared by hydrothermal method on the surface of AFC to investigate the ultrasonic piezoelectric catalysis effect. X-ray diffraction (XRD), Raman spectroscopy, energy dispersive x-ray spectroscopy (EDS) and scanning electron microscopy (SEM) were used to analyze the structure and morphology of CuO-BTO/AFC composite. It is found that the CuO-BTO/AFC composite exhibits excellent piezo-catalytic performance for the degradation of organics promoted by ultrasonic vibration. The CuO-BTO/AFC composite can decompose methyl orange and methylene blue with degradation efficiency as high as 93.9% and 97.6% within 25 min, respectively. The mechanism of piezoelectricity enhanced ultrasound supported catalysis effect of system CuO-BTO/AFC is discussed. The formed heterojunction structure between BTO and CuO promotes the separation of positive and negative charges caused by the piezoelectric effect.
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Thermoelectric (TE) performance of the Janus ZrSSe monolayer under biaxial strain is systematically explored by the first-principles approach and Boltzmann transport theory. Our results show that the Janus ZrSSe monolayer has excellent chemical, dynamical, thermal, and mechanical stabilities, which provide a reliable platform for strain tuning. The electronic structure and TE transport parameters of the Janus ZrSSe monolayer can be obviously tuned by biaxial strain. Under 2% tensile strain, the optimal power factor PF of the n-type-doped Janus ZrSSe monolayer reaches 46.36 m W m-1 K-2 at 300 K. This value is higher than that of the most classical TE materials. Under 6% tensile strain, the maximum ZT values for the p-type- and n-type-doped Janus ZrSSe monolayers are 4.41 and 4.88, respectively, which are about 3.83 and 1.49 times the results of no strain, respectively. Such high TE performance can be attributed to high band degeneracy and short phonon relaxation time under strain, causing simultaneous increase of the Seebeck coefficient and suppression of the phonon thermal transport. Present work demonstrates that the Janus ZrSSe monolayer is a promising candidate as a strain-tunable TE material and stimulates further experimental synthesis.
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Recently, BiCuOTe as a promising thermoelectric material has attracted extensive interest due to its lower thermal conductivity and higher electrical conductivity. However, little is known about the role of point defects in the growth, processing, and device degradation of this material. Moreover, the elastic properties which provide valuable information about the bonding characteristics, heat conductivity, and their anisotropic characters are investigated for effective design and characterization of new devices. Motivated by these considerations, a first-principles study about the stability of point defects and their effects on the thermal-mechanical properties of BiCuOTe was performed. The vacancies are found to be more stable than the interstitials. XO (here X occupying the O lattice site, with X = Cu, Bi or Te) are generally unfavorable among the considered point defects. Point defects generally have negative effects on elastic constants (except C66), suggesting that the resistance of defective systems to uniaxial and shear deformation is usually weaker than the that of ideal BiCuOTe. Similarly, point defects could deteriorate the ability to resist external compression. However, the introduction of point defects may improve the elastic compliances and depress the Debye temperature, which may increase the thermal expansion efficient of BiCuOTe. As compared with the ideal system, the point defects such as CuBi, TeBi, BiTe, OCu, CuTe and TeCu may generally reduce the phonon thermal conductivity. This study would provide insights into the effect of point defects on the elastic and thermal properties of BiCuOTe and has important implications in the rational design of superior thermoelectric materials.
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Neutron irradiation induced degradation of porous silica film is studied by Molecular Dynamics and Density-Functional theory-based methods. The degradation of microscopic structure, thermal property, and optical property of porous silica film are systematically investigated. Low-energy recoil is used to simulate the neutron irradiation effect. The pair and bond angle distributions, and coordination number distributions reveal that, under neutron irradiation, the microscopic structure of porous silica film is obviously modified, and the coordination defects are induced. We find that the higher recoil energy, the more coordination defects are formed in the film. The increased defects lead to a decrease in thermal conductivity. In addition, neutron irradiation induces additional optical absorption peaks in UV region and increasement in refractive index, resulting in a noticeable reduction in light transmittance. The detailed calculation of density of states reveals that these optical absorption peaks originate from the irradiation induced defect states in band gap. Our work shows that low-energy neutron irradiation can induce obvious defect density and degrade thermal and optical properties of porous silica film, which are responsible for subsequent laser-induced damage.
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In recent years, U3Si2 has been proposed as an alternative nuclear fuel material to uranium dioxide (UO2) because of its intrinsically high uranium density and thermal conductivity. However, the operation environment in the nuclear reactor is complex and extreme, such as in-pile neutron irradiation, and thus it is necessary to explore the radiation response behavior of U3Si2 and the physical properties of its damaged states. In the present study, first-principles calculations based on density functional theory were carried out to investigate the mechanical and electronic properties of defective U3Si2. Our results showed that the defect stability in U3Si2, except its interstitial defects, is dependent on its chemical environment. When vacancy, antisite or interstitial defects are introduced into U3Si2, its elastic modulus are decreased and its ductility is enhanced. Although the presence of defects in U3Si2 does not change its metallic nature and the electron distribution in its Fermi level, their effect on the partial chemical bonding interaction is significant. This study suggests that under a radiation environment, the created defects in U3Si2 remarkably affect its mechanical and electronic properties.
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In this study, polyacrylic acid (PAA) films were deposited onto a quartz surface acoustic wave (SAW) resonator using a spin-coating technique for ammonia sensing operated at room temperature, and the sensing mechanisms and performance were systematically studied. The oxygen-containing functional groups on the surfaces of the PAA film make it sensitive and selective to ammonia molecules, even when tested at room temperature. The ammonia molecules adsorbed by the oxygen-containing functional groups of PAA (e.g., hydroxyl and epoxy groups) increase the membrane's stiffness, which was identified as the primary mechanism leading to the positive frequency shifts. However, mass loading due to adsorption of ammonia molecules is not a major reason as it will result in a negative frequency shifts. When the PAA coated SAW sensor was exposed to ammonia with a low concentration of 500 ppb, it showed a positive frequency shift of 225 Hz, with both good repeatability and stability, as well as a good selectivity to ammonia compared with those to C2H5OH, H2, HCl, H2S, CO, NO2, NO, and CH3COCH3.
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As a high-performance optical material, fused silica is widely applied in high-power laser and photoelectric systems. However, laser induced damage (LID) of fused silica severely limits the output power and performance of these systems. Due to the values in strong field physics and improving the load capacity and performance of high power systems at UV laser, LID at 355 nm of fused silica has attracted much attention. It has been found that, even be treated by advanced processing technologies, the actual damage threshold of fused silica at 355 nm is far below the intrinsic threshold. It means that there is an absorption source near 355 nm in fused silica. However, to date, the absorption source is still unknown. In this paper, a absorption source near 355 nm is found by first-principles calculations. We find that the absorption source near 355 nm is neutral oxygen-vacancy defect (NOV, ≡Si-Si≡) and this defect originates from the oxygen deficiency of fused silica. Our results indicate that NOV defect can be taken as a damage precursor for 355 nm UV laser, and this precursor can be obviously reduced by increasing the ratio of oxygen to silicon. Present work is valuable for exploring damage mechanisms and methods to improve the damage threshold of fused silica at UV laser.
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Improving the efficiency of charge separation (CS) and charge transport (CT) is essential for almost all optoelectronic applications, yet its maximization remains a big challenge. Here we propose a conceptual strategy to achieve CS efficiency close to unity and simultaneously avoid charge recombination (CR) during CT in a ferroelectric polar-discontinuity (PD) superlattice structure, as demonstrated in (BaTiO_{3})_{m}/(BiFeO_{3})_{n}, which is fundamentally different from the existing mechanisms. The competition of interfacial dipole and ferroelectric PD induces opposite band bending in BiFeO_{3} and BaTiO_{3} sublattices. Consequently, the photoexcited electrons (e) and holes (h) in individual sublattices move forward to the opposite interfaces forming electrically isolated e and h channels, leading to a CS efficiency close to unity. Importantly, the spatial isolation of conduction channels in (BaTiO_{3})_{m}/(BiFeO_{3})_{n} enable suppression of CR during CT, thus realizing a unique band diagram for spatially orthogonal CS and CT. Remarkably, (BaTiO_{3})_{m}/(BiFeO_{3})_{n} can maintain a high photocurrent and large band gap simultaneously. Our results provide a fascinating illumination for designing artificial heterostructures toward ideal CS and CT in optoelectronic applications.
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Exploring new structural materials with strong He damage tolerance is one of the key tasks for the development of nuclear reactors. Helium (He), one of the most common elements in the nuclear environment, often forms undesired bubbles in metallic materials and may result in void swelling as well as high-temperature intergranular embrittlement. In this study, the behaviors of He in high-entropy alloy (HEA) TiZrHfMoNb and its constituents are systematically investigated both theoretically and experimentally. Density functional theory calculations show that the He atom prefers to occupy tetrahedral and octahedral interstitial sites in a HEA. The migration pathway for He in TiZrHfMoNb is explored and the migration energy barrier is determined. Besides, the He clustering behavior in TiZrHfMoNb is investigated. Through transmission electron microscopy analysis, a smaller He bubble size is observed in TiZrHfMoNb than in Ti, which is proposed to result from the lower tendency to form He clusters, a weaker coarsening effect, and severe lattice distortion in HEA. The current study thus provides deep insights into the He behaviors in HEAs and may help to develop structural materials with enhanced He damage tolerance in nuclear reactors.
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The high entropy alloy is promising for hydrogen storage, especially in regard to its adjustable hydrogen storage properties. Despite several experimental investigations, there still lacks a detailed atomic-level understanding of the hydrogenation process. In this study, based on first-principles calculations, the hydrogen behaviors and microstructural evolution in high entropy alloy TiZrHfMoNb during the hydrogen absorption are investigated systematically. At low hydrogen content, hydrogen atoms prefer to occupy the octahedral interstitial sites of the BCC phase, which is different from that in BCC pure metals; when the hydrogen content reaches 1.08 wt %, the BCC TiZrHfMoNb hydrides transform into FCC phase, and hydrogen atoms are more favorable to occupy the tetrahedral interstitial sites. Further radial distribution function (RDF) analysis indicates that the enhanced disorder of
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The formation of laser-induced periodic surface structures (LIPSS) on two different dielectrics of K9 glass and fused silica upon irradiation in ambient conditions and in vacuum with multiple femtosecond (fs) laser pulse sequences at different pulse durations (35 fs, 260 fs, and 500 fs) was studied experimentally. Three types of LIPSS, so-called high-spatial-frequency LIPSS (HSFL), low-spatial-frequency LIPSS (LSFL), and supra-wavelength periodic surface structures (SWPSS) with different spatial periods and orientations were identified. The appearance was characterized with respect to the experimental parameters of laser fluence and number of laser pulses per spot. The crater morphologies - including nanoripples, periodic microgrooves, quasiperiodic microspikes, and central smooth zone - were observed by scanning electron microscope (SEM). The supra-wavelength structures exhibit periodicities, which are markedly, even multiple times, higher than the laser excitation wavelength. The SWPSS were formed with a broader range of laser fluences, upon the longer laser pulse durations (260 fs and 500 fs) and/or on the lower band-gap dielectrics (K9 glass), due to the deeper effective light penetration depths and thicker viscous surface layers formation. The HSFL were observed on the higher band-gap dielectrics (fused silica) and within a certain narrow laser parameter window. The formation mechanisms of LIPSS were also discussed.
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Recently, metal phosphides have attracted considerable attention as promising electrode materials for supercapacitors. In this work, FeP nanotube arrays have been successfully synthesized on carbon cloth using ZnO nanorod arrays as the sacrificial templets, via a phosphidation process. The dimensions of the FeP nanotubes are characterized using SEM and TEM showing the diameter to be approximately 200 nm and with a wall thickness of 50-100 nm. The tubular structure of FeP nanotubes provides a facile ion pathway and reduced inner inactive material, thus they are favorable for supercapacitor applications. As a result, the as-synthesized FeP nanotube arrays deliver an improved specific capacitance of 149.11 F g-1 and a high areal capacitance of 300.1 mF cm-2 at a current density of 1 mA cm-2. Furthermore, an MnO2//FeP solid-state asymmetric supercapacitor was fabricated with a high areal capacitance of 142 mF cm-2, which indicates the great potential of FeP nanotube arrays to be a high-performing negative electrode material for supercapacitors.
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Recent studies have shown that the two-dimensional semiconductor Bi2O2Se is a promising thermoelectric (TE) material, whereas its TE performance needs to be further improved. By using first-principles methods combined with semi-classical Boltzmann transport theory, we systemically investigate the effects of biaxial strain on the TE transport properties of Bi2O2Se monolayer. Under -2-2% strain, the maximum power factors of 3.63-3.79 and 1.43-1.79 mW m-1 K-2 are found for p-type and n-type doped Bi2O2Se monolayer, respectively. The figure of merit ZT of p-type doped Bi2O2Se monolayer is enhanced to 1.14 by 2% tensile strain at 300 K and it reaches as high as 4.22 at 800 K (as compared with the highest value of 1.42 for bulk Bi2O2Se at 800 K). This study demonstrates that the TE performance of Bi2O2Se can be significantly improved by application of tensile strain and the Bi2O2Se monolayer has great potential as a TE material.
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The thermal conductivity of vitreous silica is computed using the direct method in molecular dynamics simulations with three sets of empirical force fields, including the BKS, Teter, and ReaxFF, to investigate their performance in thermal characterization. Various heat flux and system sizes are used in the simulations to evaluate the statistical uncertainty and the finite-size effect. While all these potentials can reproduce realistic silica structures, the ReaxFF provides better agreement with experiments at 300 K than the BKS and Teter, which is due to its improved description of low-frequency vibrations. Increasing the heat flux and cross-sectional area tends to reduce the calculated standard deviation induced by thermal fluctuations, thus contributing to more accurate thermal conductivity predictions.
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Using a seed layer-free hydrothermal method, ZnO nanorods (NRs) were deposited on ST-cut quartz surface acoustic wave (SAW) devices for ammonia sensing at room temperature. For a comparison, a ZnO film layer with a thickness of 30 nm was also coated onto an ST-cut quartz SAW device using a sol-gel and spin-coating technique. The ammonia sensing results showed that the sensitivity, repeatability and stability of the ZnO NR-coated SAW device were superior to those of the ZnO film-coated SAW device due to the large surface-to-volume ratio of the ZnO NRs.
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Voltage and capacity fading of layer structured lithium and manganese rich (LMR) transition metal oxide is directly related to the structural and composition evolution of the material during the cycling of the battery. However, understanding such evolution at atomic level remains elusive. On the basis of atomic level structural imaging, elemental mapping of the pristine and cycled samples, and density functional theory calculations, it is found that accompanying the hoping of Li ions is the simultaneous migration of Ni ions toward the surface from the bulk lattice, leading to the gradual depletion of Ni in the bulk lattice and thickening of a Ni enriched surface reconstruction layer (SRL). Furthermore, Ni and Mn also exhibit concentration partitions within the thin layer of SRL in the cycled samples where Ni is almost depleted at the very surface of the SRL, indicating the preferential dissolution of Ni ions in the electrolyte. Accompanying the elemental composition evolution, significant structural evolution is also observed and identified as a sequential phase transition of C2/m â I41 â Spinel. For the first time, it is found that the surface facet terminated with pure cation/anion is more stable than that with a mixture of cation and anion. These findings firmly established how the elemental species in the lattice of LMR cathode transfer from the bulk lattice to surface layer and further into the electrolyte, clarifying the long-standing confusion and debate on the structure and chemistry of the surface layer and their correlation with the voltage fading and capacity decaying of LMR cathode. Therefore, this work provides critical insights for design of cathode materials with both high capacity and voltage stability during cycling.
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Epitaxial strain provides a powerful approach to manipulate physical properties of materials through rigid compression or extension of their chemical bonds via lattice-mismatch. Although symmetry-mismatch can lead to new physics by stabilizing novel interfacial structures, challenges in obtaining atomic-level structural information as well as lack of a suitable approach to separate it from the parasitical lattice-mismatch have limited the development of this field. Here, we present unambiguous experimental evidence that the symmetry-mismatch can be strongly controlled by dimensionality and significantly impact the collective electronic and magnetic functionalities in ultrathin perovskite LaCoO3/SrTiO3 heterojunctions. State-of-art diffraction and microscopy reveal that symmetry breaking dramatically modifies the interfacial structure of CoO6 octahedral building-blocks, resulting in expanded octahedron volume, reduced covalent screening, and stronger electron correlations. Such phenomena fundamentally alter the electronic and magnetic behaviors of LaCoO3 thin-films. We conclude that for epitaxial systems, correlation strength can be tuned by changing orbital hybridization, thus affecting the Coulomb repulsion, U, instead of by changing the band structure as the common paradigm in bulks. These results clarify the origin of magnetic ordering for epitaxial LaCoO3 and provide a route to manipulate electron correlation and magnetic functionality by orbital engineering at oxide heterojunctions.
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Deformation mechanisms of as-deposited and post-annealed Ti50.2Ni49.6, Ti50.3Ni46.2Cu3.5 and Ti48.5Ni40.8Cu7.5 thin films were investigated using the in situ synchrotron X-ray diffraction technique. Results showed that initial crystalline phases determined the deformation mechanisms of all the films during tensile loading. For the films dominated by monoclinic martensites (B19'), tensile stress induced the detwinning of ã011ã type-II twins and resulted in the preferred orientations of (002)B19' parallel to the loading direction (⥠LD) and (020)B19' perpendicular to the LD (⥠LD). For the films dominated by austenite (B2), the austenite directly transformed into martensitic variants (B19') with preferred orientations of (002)B19' ⥠LD and (020)B19' ⥠LD. For the Ti50.3Ni46.2Cu3.5 and Ti48.1Ni40.8Cu7.5 films, martensitic transformation temperatures decreased apparently after post-annealing because of the large thermal stress generated in the films due to the large differences in thermal expansion coefficients between the film and substrate.