RESUMEN
The activity, selectivity, and lifetime of nanocatalysts critically depend on parameters such as their morphology, support, chemical composition, and oxidation state. Thus, correlating these parameters with their final catalytic properties is essential. However, heterogeneity across nanoparticles (NPs) is generally expected. Moreover, their nature can also change during catalytic reactions. Therefore, investigating these catalysts in situ at the single-particle level provides insights into how these tunable parameters affect their efficiency. To unravel this question, we applied spectro-microscopy to investigate the thermal reduction of SiO2-supported copper oxide NPs in ultrahigh vacuum. Copper was selected since its oxidation state and morphological transformations strongly impact the product selectivity of many catalytic reactions. Here, the evolution of the NPs' chemical state was monitored in situ during annealing and correlated with their morphology in situ. A reaction front was observed during the reduction of CuO to Cu2O. From the temperature dependence of this front, the activation energy was extracted. Two parameters were found to strongly influence the NP reduction: the initial nanoparticle size and the chemical state of the SiO2. substrate. The CuOx reduction was found to be completed first on smaller NPs and was also favored over partially reduced SiOx regions that resulted from X-ray beam irradiation. This methodology with single-particle level spectro-microscopy resolution provides a way of isolating the influence of diverse morphologic, electronic, and chemical influences on a chemical reaction. The knowledge gained is crucial for the future design of more complex multimetallic catalytic systems.
RESUMEN
Probing of the free surface ferroelectric properties of thin polar films can be achieved either by estimating the band bending variance under the top-most layer or by studying the extent of the extrinsic charge accumulated outside the surface. Photoemitted or incoming low-energy electrons can be used to characterize locally both properties in a spectromicroscopic approach. Thin ferroelectric lead zirco-titanate (PZT) is investigated by combining low energy/mirror electron microscopy (LEEM/MEM) with photoemission electron microscopy (PEEM) and high-resolution photoelectron spectroscopy (XPS). Significant extrinsic negative compensation charge is proven to accumulate on the surface of the outward polarized thin film, indicated by high MEM-LEEM transition values, up to 15.3 eV, and is correlated with the surface electrostatic potential, which can be partially screened either by electrons interacting with the sample or by soft X-rays through the ejection of secondary electrons and generation of positive charge under the surface. A radiation-induced surface charge compensation effect is observed. The study indicates that air-exposed high quality ferroelectric thin films show large negative surface potentials, determined locally on the surface, which are nevertheless sensitive to beam damage and molecular desorption. These values represent a confirmation of previously estimated surface potential energy values determined from the LEED data on clean surfaces.
RESUMEN
Spatio-temporal nonuniformities in H2 oxidation on individual Rh(hâ¯kâ¯l) domains of a polycrystalline Rh foil were studied in the 10-6 mbar pressure range by photoemission electron microscopy (PEEM), X-ray photoemission electron microscopy (XPEEM), and low-energy electron microscopy (LEEM). The latter two were used for in situ correlative microscopy to zoom in with significantly higher lateral resolution, allowing detection of an unusual island-mediated oxygen front propagation during kinetic transitions. The origin of the island-mediated front propagation was rationalized by model calculations based on a hybrid approach of microkinetic modeling and Monte Carlo simulations.
RESUMEN
Ultrathin silica films are considered suitable two-dimensional model systems for the study of fundamental chemical and physical properties of all-silica zeolites and their derivatives, as well as novel supports for the stabilization of single atoms. In the present work, we report the creation of a new model catalytic support based on the surface functionalization of different silica bilayer (BL) polymorphs with well-defined atomic structures. The functionalization is carried out by means of in situ H-plasma treatments at room temperature. Low energy electron diffraction and microscopy data indicate that the atomic structure of the films remains unchanged upon treatment. Comparing the experimental results (photoemission and infrared absorption spectra) with density functional theory simulations shows that H2 is added via the heterolytic dissociation of an interlayer Si-O-Si siloxane bond and the subsequent formation of a hydroxyl and a hydride group in the top and bottom layers of the silica film, respectively. Functionalization of the silica films constitutes the first step into the development of a new type of model system of single-atom catalysts where metal atoms with different affinities for the functional groups can be anchored in the SiO2 matrix in well-established positions. In this way, synergistic and confinement effects between the active centers can be studied in a controlled manner.
RESUMEN
Oxidized copper surfaces have attracted significant attention in recent years due to their unique catalytic properties, including their enhanced hydrocarbon selectivity during the electrochemical reduction of CO2. Although oxygen plasma has been used to create highly active copper oxide electrodes for CO2RR, how such treatment alters the copper surface is still poorly understood. Here, we study the oxidation of Cu(100) and Cu(111) surfaces by sequential exposure to a low-pressure oxygen plasma at room temperature. We used scanning tunnelling microscopy (STM), low energy electron microscopy (LEEM), X-ray photoelectron spectroscopy (XPS), near edge X-ray absorption fine structure spectroscopy (NEXAFS) and low energy electron diffraction (LEED) for the comprehensive characterization of the resulting oxide films. O2-plasma exposure initially induces the growth of 3-dimensional oxide islands surrounded by an O-covered Cu surface. With ongoing plasma exposure, the islands coalesce and form a closed oxide film. Utilizing spectroscopy, we traced the evolution of metallic Cu, Cu2O and CuO species upon oxygen plasma exposure and found a dependence of the surface structure and chemical state on the substrate's orientation. On Cu(100) the oxide islands grow with a lower rate than on the (111) surface. Furthermore, while on Cu(100) only Cu2O is formed during the initial growth phase, both Cu2O and CuO species are simultaneously generated on Cu(111). Finally, prolonged oxygen plasma exposure results in a sandwiched film structure with CuO at the surface and Cu2O at the interface to the metallic support. A stable CuO(111) surface orientation is identified in both cases, aligned to the Cu(111) support, but with two coexisting rotational domains on Cu(100). These findings illustrate the possibility of tailoring the oxidation state, structure and morphology of metallic surfaces for a wide range of applications through oxygen plasma treatments.
RESUMEN
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report µm scale, few-layer graphene structures formed at moderate temperatures (600-700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
RESUMEN
Establishing the rather complex correlation between the structure and the charge transfer in organic-organic heterostructures is of utmost importance for organic electronics and requires spatially resolved structural, chemical, and electronic details. Insight into this issue is provided here by combining atomic force microscopy, Kelvin probe force microscopy, photoemission electron microscopy, and low-energy electron microscopy for investigating a case study. We select the interface formed by pentacene (PEN), benchmark among the donor organic semiconductors, and a p-type dopant from the family of fluorinated fullerenes. As for Buckminsterfullerene (C60), the growth of its fluorinated derivative C60F48 is influenced by the thickness and crystallinity of the PEN buffer layer, but the behavior is markedly different. We provide a microscopic description of the C60F48/PEN interface formation and analyze the consequences in the electronic properties of the final heterostructure. For just one single layer of PEN, a laterally complete but noncompact C60F48/PEN interface is created, importantly affecting the surface work function. Nonetheless, from the very beginning of the second layer formation, the presence of epitaxial and nonepitaxial PEN domains dramatically influences the growth dynamics and extremely well packed two-dimensional C60F48 islands develop. Insightful elemental maps of the C60F48/PEN surface spatially resolve the nonuniform distribution of the dopant molecules, which leads to a heterogeneous work function landscape.