Surface plasmon lasing observed in metal hole arrays.

Surface plasmons in metal hole arrays have been studied extensively in the context of extraordinary optical transmission, but so far these arrays have not been studied as resonators for surface plasmon lasing at optical frequencies. We experimentally study a metal hole array with a semiconductor (InGaAs) gain layer placed in close (20 nm) proximity of the metal hole array. As a function of increasing pump power, we observe an intense and spectrally narrow peak, with a clear threshold. This laser emission is donut shaped and radially polarized. Three experimental observations support that the system shows surface plasmon lasing. First, the full wavelength dispersion of the observed resonances can be understood by using a single surface plasmon mode of the system. Second, the polarization of these resonances is as expected for surface plasmons. Third, the magnitude of the avoided crossing, which results from mode coupling at the holes, has a similar magnitude as found in simulations using surface plasmons.

Plasmonic distributed feedback lasers at telecommunications wavelengths.

We investigate electrically pumped, distributed feedback (DFB) lasers, based on gap-plasmon mode metallic waveguides. The waveguides have nano-scale widths below the diffraction limit and incorporate vertical groove Bragg gratings. These metallic Bragg gratings provide a broad bandwidth stop band (~500 nm) with grating coupling coefficients of over 5000/cm. A strong suppression of spontaneous emission occurs in these Bragg grating cavities, over the stop band frequencies. This strong suppression manifests itself in our experimental results as a near absence of spontaneous emission and significantly reduced lasing thresholds when compared to similar length Fabry-Pérot waveguide cavities. Furthermore, the reduced threshold pumping requirements permits us to show strong line narrowing and super linear light current curves for these plasmon mode devices even at room temperature.

Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides.

We demonstrate lasing in Metal-Insulator-Metal (MIM) waveguides filled with electrically pumped semiconductor cores, with core width dimensions below the diffraction limit. Furthermore these waveguides propagate a transverse magnetic (TM0) or so called gap plasmon mode [1-4]. Hence we show that losses in sub-wavelength MIM waveguides can be overcome to create small plasmon mode lasers at wavelengths near 1500 nm. We also give results showing room temperature lasing in MIM waveguides, with approximately 310 nm wide semiconductor cores which propagate a transverse electric mode.

High-Efficiency Nanowire Solar Cells with Omnidirectionally Enhanced Absorption Due to Self-Aligned Indium-Tin-Oxide Mie Scatterers.

Photovoltaic cells based on arrays of semiconductor nanowires promise efficiencies comparable or even better than their planar counterparts with much less material. One reason for the high efficiencies is their large absorption cross section, but until recently the photocurrent has been limited to less than 70% of the theoretical maximum. Here we enhance the absorption in indium phosphide (InP) nanowire solar cells by employing broadband forward scattering of self-aligned nanoparticles on top of the transparent top contact layer. This results in a nanowire solar cell with a photovoltaic conversion efficiency of 17.8% and a short-circuit current of 29.3 mA/cm2 under 1 sun illumination, which is the highest reported so far for nanowire solar cells and among the highest reported for III-V solar cells. We also measure the angle-dependent photocurrent, using time-reversed Fourier microscopy, and demonstrate a broadband and omnidirectional absorption enhancement for unpolarized light up to 60° with a wavelength average of 12% due to Mie scattering. These results unambiguously demonstrate the potential of semiconductor nanowires as nanostructures for the next generation of photovoltaic devices.

Ultrafast non-local control of spontaneous emission.

The radiative interaction of solid-state emitters with cavity fields is the basis of semiconductor microcavity lasers and cavity quantum electrodynamics (CQED) systems. Its control in real time would open new avenues for the generation of non-classical light states, the control of entanglement and the modulation of lasers. However, unlike atomic CQED or circuit quantum electrodynamics, the real-time control of radiative processes has not yet been achieved in semiconductors because of the ultrafast timescales involved. Here we propose an ultrafast non-local moulding of the vacuum field in a coupled-cavity system as an approach to the control of radiative processes and demonstrate the dynamic control of the spontaneous emission (SE) of quantum dots (QDs) in a photonic crystal (PhC) cavity on a ∼ 200 ps timescale, much faster than their natural SE lifetimes.

Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling.

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres.