Quantized conductance in an InSb nanowire.

Ballistic one-dimensional transport in semiconductor nanowires plays a central role in creating topological and helical states. The hallmark of such one-dimensional transport is conductance quantization. Here we show conductance quantization in InSb nanowires at nonzero magnetic fields. Conductance plateaus are studied as a function of source-drain bias and magnetic field, enabling extraction of the Landé g factor and the subband spacing.

From InSb nanowires to nanocubes: looking for the sweet spot.

High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the "local" growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 10(4) cm(2) V(-1) s(-1) enable the realization of complex spintronic and topological devices.

Control and coherence of the optical transition of single nitrogen vacancy centers in diamond.

We demonstrate coherent control of the optical transition of single nitrogen-vacancy defect centers in diamond. On applying short resonant laser pulses, we observe optical Rabi oscillations with a half period as short as 1 ns, an order of magnitude shorter than the spontaneous emission time. By studying the decay of Rabi oscillations, we find that the decoherence is dominated by laser-induced spectral jumps. By using a low-power probe pulse as a detuning sensor and applying postselection, we demonstrate that spectral diffusion can be overcome in this system to generate coherent photons.

Formation and electronic properties of InSb nanocrosses.

Signatures of Majorana fermions have recently been reported from measurements on hybrid superconductor-semiconductor nanowire devices. Majorana fermions are predicted to obey special quantum statistics, known as non-Abelian statistics. To probe this requires an exchange operation, in which two Majorana fermions are moved around one another, which requires at least a simple network of nanowires. Here, we report on the synthesis and electrical characterization of crosses of InSb nanowires. The InSb wires grow horizontally on flexible vertical stems, allowing nearby wires to meet and merge. In this way, near-planar single-crystalline nanocrosses are created, which can be measured by four electrical contacts. Our transport measurements show that the favourable properties of the InSb nanowire devices-high carrier mobility and the ability to induce superconductivity--are preserved in the cross devices. Our nanocrosses thus represent a promising system for the exchange of Majorana fermions.