Simple and Safe Synthesis of Yolk-Shell-Structured Silicon/Carbon Composites with Enhanced Electrochemical Properties.

With its substantial theoretical capacity, silicon (Si) is a prospective anode material for high-energy-density lithium-ion batteries (LIBs). However, the challenges of a substantial volume expansion and inferior conductivity in Si-based anodes restrict the electrochemical stability. To address this, a yolk-shell-structured Si-carbon composite, featuring adjustable void sizes, was synthesized using tin (Sn) as a template. A uniform coating of tin oxide (SnO2) on the surface of nano-Si particles was achieved through a simple annealing process. This approach enables the removal of the template with concentrated hydrochloric acid (HCl) instead of hydrofluoric acid (HF), thereby reducing toxicity and corrosiveness. The conductivity of Si@void@Carbon (Si@void@C) was further enhanced by using a high-conductivity carbon layer derived from pitch. By incorporating an internal void, this yolk-shell structure effectively enhanced the low Li+/electron conductivity and accommodated the large volume change of Si. Si@void@C demonstrated an excellent electrochemical performance, retaining a discharge capacity of 735.3 mAh g-1 after 100 cycles at 1.0 A g-1. Even at a high current density of 2.0 A g-1, Si@void@C still maintained a discharge capacity of 1238.5 mAh g-1.

Interfacial Superconductivity Achieved in Parent AEFe2As2 (AE = Ca, Sr, Ba) by a Simple and Realistic Annealing Route.

Materials with interfaces often exhibit extraordinary phenomena exemplified by rich physics, such as high-temperature superconductivity and enhanced electronic correlations. However, demonstrations of confined interfaces to date have involved intensive effort and fortuity, and no simple path is consistently available. Here, we report the achievement of interfacial superconductivity in the nonsuperconducting parent compounds AEFe2As2, where AE = Ca, Sr, or Ba, by simple subsequent annealing of the as-grown samples in an atmosphere of As, P, or Sb. Our results indicate that the superconductivity originates from electron transfer at the interface of the hybrid van der Waals heterostructures, consistent with the two-dimensional superconducting transition observed. The observations suggest a common origin of interfaces for the nonbulk superconductivity previously reported in the AEFe2As2 compound family and provide insight for the further exploration of interfacial superconductivity.

The effect of an annealing process on atomic layer deposited TiO2thin films.

In this paper, we study the property changes in TiO2thin films related to annealing under various conditions. XPS analysis showed that the concentration of oxygen vacancies in TiO2thin films was reduced by annealing. In the case of annealing in an O2and air atmosphere, the oxygen vacancy concentration was reduced to the greatest extent as oxygen diffused into the TiO2thin film and rearrangement of atoms occurred. XRD analysis showed that the anatase structure of annealed TiO2thin films was clearly present compared to the as-deposited TiO2thin film.I-Vanalysis showed that the lower the concentration of oxygen vacancy, the lower the leakage current (O2annealed TiO2: 10-4A cm-2) than as dep TiO2thin film (∼10-1A cm-2). The dielectric constant of annealed TiO2thin films was 26-30 which was higher than the as-deposited TiO2thin film (k âˆ¼ 18) because the anatase structure became more apparent.

Fast Bragg Grating Inscription in PMMA Polymer Optical Fibres: Impact of Thermal Pre-Treatment of Preforms.

In this work, fibre Bragg gratings (FBGs) were inscribed in two different undoped poly- (methyl methacrylate) (PMMA) polymer optical fibres (POFs) using different types of UV lasers and their inscription times, temperature and strain sensitivities are investigated. The POF Bragg gratings (POFBGs) were inscribed using two UV lasers: a continuous UV HeCd @325 nm laser and a pulsed UV KrF @248 nm laser. Two PMMA POFs are used in which the primary and secondary preforms (during the two-step drawing process) have a different thermal treatment. The PMMA POFs drawn in which the primary or secondary preform is not specifically pre-treated need longer inscription time than the fibres drawn where both preforms have been pre-annealed at 80 °C for 2 weeks. Using both UV lasers, for the latter fibre much less inscription time is needed compared to another homemade POF. The properties of a POF fabricated with both preforms thermally well annealed are different from those in which just one preform step process is thermally treated, with the first POFs being much less sensitive to thermal treatment. The influence of annealing on the strain and temperature sensitivities of the fibres prior to FBG inscription is also discussed, where it is observed that the fibre produced from a two-step drawing process with well-defined pre-annealing of both preforms did not produce any significant difference in sensitivity. The results indicate the impact of preform thermal pre-treatment before the PMMA POFs drawing, which can be an essential characteristic in the view of developing POF sensors technology.

Effect of Annealing Process and Molecular Weight on the Polymorphic Transformation from Form II to Form I of Poly(1-butene).

Poly(1-butene) (PB-1) resin has excellent mechanical properties, outstanding creep resistance, environmental stress crack resistance and other excellent properties. However, PB-1 resin experiences a crystal transformation for a period, which seriously affects the production efficiency and directly restricts its large-scale commercial production and application. The factors affecting the crystal transformation of PB-1 are mainly divided into external and internal factors. External factors include crystallization temperature, thermal history, nucleating agent, pressure, solvent induction, etc., and internal factors include chain length, copolymerization composition, isotacticity, its distribution, etc. In this study, to avoid the interference of molecular weight distribution on crystallization behavior, five PB-1 samples with narrow molecular weight distribution (between 1.09 and 1.44) and different molecular weights (from 23 to 710 k) were chosen to research the influence of temperature and time in the step-by-step annealing process and molecular weight on the crystal transformation by differential scanning calorimetry (DSC). When the total annealing time was the same, the step-by-step annealing process can significantly accelerate the rate of transformation from crystal form II to I. PB-1 samples with different molecular weights have the same dependence on annealing temperature, and the optimal nucleation temperature (i.e., low annealing temperature, Tl) and growth temperature (i.e., high annealing temperature, Th) were -10 °C and 40 °C, respectively. At these two temperatures, the crystal form I obtained by step-by-step annealing had the highest content; other lower or higher annealing temperatures would reduce the rate of crystal transformation. When the annealing temperature was the same, crystal form I first increased with annealing time tl, then gradually reached a plateau, but the time to reach a plateau was different. The crystalline form I contents of the samples with lower molecular weight increased linearly with annealing time th. However, the crystalline form I contents of the samples with higher molecular weight increased rapidly with annealing time th at the beginning, and then transformation speed from form II to form I slowed down, which implied that controlling Tl/tl and Th/th can tune the different contents of form I and form II. At the same Tl/tl or Th/th, with increasing molecular weight, the transformation speed from form II to form I via the step-by-step annealing process firstly increased and then slowed down due to the competition of the number of linked molecules and molecular chain mobility during crystallization. This study definitely provides an effective method for accelerating the transformation of poly(1-butene) crystal form, which not only has important academic significance, but also has vital industrial application.

Performance Optimization of Pb0.97La0.03Sc0.45Ta0.45Ti0.1O3 Ceramics by Annealing Process.

The annealing effects on Pb0.97La0.03Sc0.45Ta0.45Ti0.1O3 (PLSTT) ceramics prepared by the solid-state reaction method are systemically investigated using experimental and theoretical techniques. Comprehensive studies are performed on the PLSTT samples by varying annealing time (AT) from t (=0, 10, 20, 30, 40, 50 and 60) h. The properties involving ferroelectric polarization (FP), electrocaloric (EC) effect, energy harvesting performance (EHP) and energy storage performance (ESP) are reported, compared and contrasted. All these features are seen to gradually improve with the increase in AT, and they all reach the climaxed-shaped values and then decrease by further increasing the AT. For t = 40 h, the maximum FP (23.2 µC/cm2) is attained at an electric field of 50 kV/cm, while the high EHP effects (0.297 J/cm3) and positive EC are achieved (for ΔT~0.92 K and ΔS~0.92 J/(K·kg)) at 45 kV/cm. The EHP value of the PLSTT ceramics increased by 21.7% while the polarization value was enhanced by 33.3%. At t = 30 h, the ceramics have attained the best ESP value of 0.468 J/cm3 with an energy loss of 0.05 J/cm3. We strongly believe that the AT plays a crucial role in the optimization of different traits of the PLSTT ceramics.

A Strategy toward Realizing Narrow Line with High Electrical Conductivity by Electrohydrodynamic Printing.

Over the past few decades, electrohydrodynamic (EHD) printing has proved to be an environmentally friendly, cost-effective and powerful tool in manufacturing electronic devices with a wire width of less than 50 µm. In particular, EHD printing is highly valued for the printing of ultrafine wire-width silver electrodes, which is important in manufacturing large-area, high-resolution micron-scale or even nanoscale structures. In this paper, we compare two methods of surface modification of glass substrate: UV treatment and oxygen plasma treatment. We found that oxygen plasma was better than UV treatment in terms of wettability and uniformity. Secondly, we optimized the annealing temperature parameter, and found that the conductivity of the electrode was the highest at 200 °C due to the smoothing silver electrode and the oxidation-free internal microstructure. Thirdly, we used EHD printing to fabricate silver electrodes on the glass substrate. Due to the decrease of conductivity as a result of the skin effect and the decrease of silver content, we found that driving voltage dropped, line width decreased, and the conductivity of silver line decreased. After the optimization of the EHD printing process, Ag electrode line width and conductivity reached 19.42 ± 0.24 µm and 6.01 × 106 S/m, demonstrating the potential of electro-hydraulic printing in the manufacturing of flexible, wearable, high-density, low-power-consumption electronics.

Effect of Annealing Process on the Microstructure and Texture of Cold-Rolled High-Purity Al-0.5%Cu Plates.

As a kind of typical high stacking fault energy materials, recrystallization behavior of high purity Al-0.5%Cu alloy is significantly influenced by the annealing process. In this study, different heating rate, target temperature, and holding time were discovered to have profound impact on the microstructures and textures of Al-0.5%Cu plates. Electron backscatter diffraction (EBSD), scanning electron microscope (SEM), and X-ray diffraction (XRD) were utilized for analyzing the evolution of the microstructure and texture in the subsequent microstructural characterization. Vickers hardness tests were employed for measuring hardness of specimens. The results showed that no obvious recrystallization was observed at lower temperature and the composition of texture influenced by rising temperature, heating rate affected initial recrystallization temperature, grain size, and strength of textures. After recrystallizing completely, the size of microstructures and the distribution of textures had little change with the extension of holding time.

Investigation of Heater Structures for Thermal Conductivity Measurements of SiO2 and Al2O3 Thin Films Using the 3-Omega Method.

A well-known method for measuring thermal conductivity is the 3-Omega (3ω) method. A prerequisite for it is the deposition of a metal heater on top of the sample surface. The known design rules for the heater geometry, however, are not yet sufficient. In this work, heaters with different lengths and widths within the known restrictions were investigated. The measurements were carried out on SiO2 thin films with different film thicknesses as a reference. There was a significant difference between theoretical deposited heater width and real heater width, which could lead to errors of up to 50% for the determined thermal conductivity. Heaters with lengths between 11 and 13 mm and widths of 6.5 µm or more proved to deliver the most trustworthy results. To verify the performance of these newfound heaters, additional investigations on Al2O3 thin films were carried out, proving our conclusions to be correct and delivering thermal conductivity values of 0.81 Wm-1 K-1 and 0.93 Wm-1 K-1 for unannealed and annealed samples, respectively. Furthermore, the effect of annealing on Al2O3 was studied, revealing a significant shrinking in film thickness of approximately 11% and an increase in thermal conductivity of 15%. The presented results on well-defined geometries will help to produce optimized heater structures for the 3ω method.

Reducing Defects in Organic-Lead Halide Perovskite Film by Delayed Thermal Annealing Combined with KI/I2 for Efficient Perovskite Solar Cells.

This study improved quality of CH3NH3PbI3 (MAPbI3) perovskite films by delaying thermal annealing in the spin coating process and introducing KI and I2 to prepare MAPbI3 films that were low in defects for high-efficiency perovskite solar cells. The influences of delayed thermal annealing time after coating the MAPbI3 perovskite layer on the crystallized perovskite, the morphology control of MAPbI3 films, and the photoelectric conversion efficiency of solar cells were investigated. The optimal delayed thermal annealing time was found to be 60 min at room temperature. The effect of KI/I2 additives on the growth of MAPbI3 films and the corresponding optimal delayed thermal annealing time were further investigated. The addition of KI/I2 can improve perovskite crystallinity, and the conductivity and carrier mobility of MAPbI3 films. Under optimized conditions, the photoelectric conversion efficiency of MAPbI3 perovskite solar cells can reach 19.36% under standard AM1.5G solar illumination of 100 mW/cm2.

Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.

In this study, the oxygen scavenger layer (OSL) is proposed as a back channel in the bilayer channel to enhance both the electrical characteristics and stability of an amorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT) and also to enable its fabrication at low temperature. The OSL is a hafnium (Hf)-doped a-IGZO channel layer deposited by radio-frequency magnetron cosputtering. Amorphous IGZO TFTs with the OSL, even if annealed at a low temperature (200 °C), exhibited improved electrical characteristics and stability under positive bias temperature stress (PBTS) compared to those without the OSL, specifically in terms of field-effect mobility (31.08 vs 9.25 cm2/V s), on/off current ratio (1.73 × 1010 vs 8.68 × 108), and subthreshold swing (0.32 vs 0.43 V/decade). The threshold voltage shift under PBTS at 50 °C for 10,000 s decreased from 9.22 to 2.31 V. These enhancements are attributed to Hf in the OSL, which absorbs oxygen ions from the a-IGZO front channel near the interface between a-IGZO and the OSL.

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique.

Stress-induced performance change in electron packaging architecture is a major concern when the keep-out zone (KOZ) and corresponding integration density of interconnect systems and transistor devices are considered. In this study, a finite element analysis (FEA)-based submodeling approach is demonstrated to analyze the stress-affected zone of through-silicon via (TSV) and its influences on a planar metal oxide semiconductor field transistor (MOSFET) device. The feasibility of the widely adopted analytical solution for TSV stress-affected zone estimation, Lamé radial stress solution, is investigated and compared with the FEA-based submodeling approach. Analytic results reveal that the Lamé stress solution overestimates the TSV-induced stress in the concerned device by over 50%, and the difference in the estimated results of device performance between Lamé stress solution and FEA simulation can reach 22%. Moreover, a silicon-germanium-based lattice mismatch stressor is designed in a silicon p-type MOSFET, and its effects are analyzed and compared with those of TSV residual stress. The S/D stressor dominates the stress status of the device channel. The demonstrated FEA-based submodeling approach is effective in analyzing the stress impact from packaging and device-level components and estimating the KOZ issue in advanced electronic packaging.

Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors.

In this study, we investigated the p-doping effects of a fluoropolymer, Cytop, on tungsten diselenides (WSe2). The hole current of the Cytop-WSe2 field-effect transistor (FET) was boosted by the C-F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. Analysis of the observed p-doping effects using atomic force microscopy (AFM) and Raman spectroscopy shed light on the doping mechanism. Moreover, Cytop reduces the electrical instability by preventing the adsorption of ambient molecules on the WSe2 surface. Annealing Cytop deposited on WSe2 eliminated the possible impurities associated with adsorbates (i.e., moisture and oxygen) that act as traps on the surface of WSe2. After thermal annealing, the Cytop-WSe2 FET afforded higher p-type conductivity and reduced hysteresis. The combination of the Cytop-WSe2 FET with annealing provides a promising method for obtaining high-performance WSe2 p-type transistors.

Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process.

In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. The thin films are characterized using Fourier Transform Infrared spectroscopy (FTIR), PL spectroscopy, and Energy-Dispersive X-ray Spectroscopy (EDS). According to the results of the structural characterization, it is deduced that a structural rearrangement of the amorphous matrix is carried out during the fast annealing process, which results in different degrees of oxidation on the a-Si1-xCx:H films. The PL peak position shifts towards higher energies as the temperature increases. The sample deposited with a silane/methane flux ratio of 37.5 at an Radio Frequency (RF) power of 6 W experiences an increase in PL intensity of more than nine times, with a displacement in the peak position from 2.5 eV to 2.87 eV, at 800 °C. From the PL analysis, we observe two emission bands: one centered in the near infrared and other in the visible range (with a blue peak). This study opens the possibility to use such thin films in the development of optoelectronics devices, with potential for application in solar cells.

Ultrafast Response and High Selectivity toward Acetone Vapor Using Hierarchical Structured TiO2 Nanosheets.

For the development of high-performance gas sensors, ultrafast response and high selectivity are critical requirements for many practical applications. An alternative strategy is to employ hierarchical nanostructured materials in gas sensors. In this work, we report newly synthesized TiO2 hexagonal nanosheets with a hierarchical porous structure, which demonstrate an ultrafast gas response and high selectivity toward acetone vapor for the first time. A simple one-step annealing process to prepare hierarchical TiO2 nanosheets derived from layered TiSe2 nanosheet templates is reported. The hierarchical structure interlaced with anatase TiO2 nanosheets showed an open porous characteristic. The average pore size was about 20 nm examined using a high-resolution TEM. The gas sensing properties toward acetone vapor of the novel hierarchical structured TiO2 nanosheets were characterized in detail including optimal operation temperature, sensitivity, selectivity, response/recovery time, and long-term stability. The gas sensing response and recovery times were 0.75 s and 0.5 s, respectively. We attribute these superior response properties to its unique hierarchical pore structure with a high specific surface area. The results show great potential for acetone vapor detection, particularly in dynamic ultrafast monitoring by using the synthesized hierarchical structured TiO2 nanosheets.

Rapid Microwave-Annealing Process of Hybrid Perovskites to Eliminate Miscellaneous Phase for High Performance Photovoltaics.

Rapid processing technologies of perovskite solar cells (PSCs) offer an exciting approach to raise the rate of production. Herein, a rapid microwave-annealing process (MAP) is reported to replace the traditional hotplate annealing process (HAP) and the processing period of perovskite is reduced to less than 1 min. Benefiting from the penetrability and simultaneity of microwave irradiation, the MAP method can effectively eliminate miscellaneous phases and thus achieve >1 µm large-size crystal grains in perovskite films. These MAP treated perovskite films exhibit pure crystalline phase, long charge-carrier lifetime, and low defect density, which can substantially improve the PSC efficiency without requiring an additional enhancer/passivation layer. The inverted planar PSCs present enhanced power conversion efficiency from 18.33% (HAP) to 21.59% (MAP) and good stability of >1000 h lifetime without encapsulation under ambient conditions. In addition, MAP can be applied to a large-size (10 cm × 10 cm) perovskite film fabrication as well as a broader tolerance in environmental temperature and precursor concentration, making it a reliable method for repeatably practical fabrication of perovskite photovoltaics.

Investigation on Low-temperature Annealing Process of Solution-processed TiO2 Electron Transport Layer for Flexible Perovskite Solar Cell.

Flexible perovskite solar cells (PSCs) have received increasing attention in wearable and portable devices over the past ten years. The low-temperature process of electron transport layer plays a key role in fabricating flexible PSCs. In this paper, we improve the performance of flexible PSCs by controlling the thermodynamic procedure in the low-temperature annealing process of solution-processed TiO2 layers and modulating the precursor concentration of (6,6)-phenyl c61 butyric acid methyl ester (PC61BM) deposited on fluorine-doped tin oxide (FTO)/TiO2 substrate. The results show that slowing down evaporation rate of residual solvent and adopting PC61BM of appropriate precursor concentration are confirmed to be effective methods to improve the performance of flexible PSCs. We also demonstrate carbon electrode-based flexible PSCs. Our work expands the feasibility of low temperature process for the development of flexible perovskite photodetectors and light-emitting diodes, as well as flexible PSCs.

The effect of short heat treatment on different properties of PET fiber using double beam interference microscopy.

Pluta microscope used to throw light on the effect of heat treatment time on the different properties of poly (ethylene terephthalate) PET fibers. PET fibers were annealed at times ranged from 5 to 30 min at different temperatures (150, 170, 190, 210°C) using two different processes (fast cooling and slow cooling processes) in air. The refractive indices, the shrinkage, orientation factor and crystallinity of PET fibers were determined for different annealing temperature during the short time treatment. The shrinkage percentage and degree of crystallinity increased with increasing the temperature and time of annealing. Microinterferograms are given for illustration.

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors.

Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance.