Ferromagnetism in magnetically doped III-V semiconductors.
Phys Rev Lett
; 86(24): 5593-6, 2001 Jun 11.
Article
en En
| MEDLINE
| ID: mdl-11415309
ABSTRACT
The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formation of ferromagnetic clusters and the percolation picture of phase transition describes well all available experimental data and allows us to predict the Mn-composition dependence of transition temperature in wurtzite (Ga,In,Al)N epitaxial layers.
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Bases de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2001
Tipo del documento:
Article
País de afiliación:
Estados Unidos