Role of strontium in oxide epitaxy on silicon (001).
Phys Rev Lett
; 101(10): 105503, 2008 Sep 05.
Article
en En
| MEDLINE
| ID: mdl-18851225
ABSTRACT
Epitaxial oxide-Si heterostructures, which integrate the functionality of crystalline oxides with Si technology, are made possible by a submonolayer of Sr deposited on Si (001). We find by electron diffraction studies using single termination Si wafers that this Sr submonolayer replaces the top layer of Si when deposited at 650 degrees C. Supported by first-principles calculations, we propose a model for the reaction dynamics of Sr on the Si surface and its effect on oxide epitaxy. This model predicts, and we experimentally confirm, an unexplored 25 degrees C pathway to crystalline oxide epitaxy on Si.
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Bases de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
Phys Rev Lett
Año:
2008
Tipo del documento:
Article
País de afiliación:
Estados Unidos