Titanium dioxide thin films deposited by plasma enhanced atomic layer deposition for OLED passivation.
J Nanosci Nanotechnol
; 8(9): 4726-9, 2008 Sep.
Article
en En
| MEDLINE
| ID: mdl-19049095
ABSTRACT
Plasma enhanced atomic layer deposition (PEALD) of titanium dioxide thin films was conducted using Tetrakis dimethylamino titanium (TDMATi) and an oxygen plasma on a polyethersulfon (PES) substrate at a deposition temperature of 90 degrees C. The effects of the induced plasma power on passivation properties were investigated according to film thickness. The growth rate of the titanium dioxide film was 0.8 A/cycle, and the water vapor transmission rate (WTVR) for a 80 nm titanium dioxide film was 0.023 g/m2 day. The passivation performance of the titanium dioxide film was investigated using an organic light-emitting diode (OLED). The coated OLED lifetime was 90 h, 15 times longer than that of an uncoated sample.
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Bases de datos:
MEDLINE
Idioma:
En
Revista:
J Nanosci Nanotechnol
Año:
2008
Tipo del documento:
Article