In situ preparation of an ultra-thin nanomask on a silicon wafer.
Nanotechnology
; 20(2): 025301, 2009 Jan 14.
Article
en En
| MEDLINE
| ID: mdl-19417267
Porous nanomasks have been prepared in situ on an insulating silicon wafer by anodization of an aluminum film grown on it. Ultra-thin nanomasks, around 50 nm thick, were fabricated by utilizing a stop signal, a vivid color appearing at the air-electrolyte interface, and the process involved showed excellent repeatability. Finally, 2D nanoscale p-n junction arrays were fabricated on a silicon on insulator (SOI) wafer using the ultra-thin nanomasks prepared. The experimental results are in good agreement with the simulated results on the characteristics of the anodization process involved.
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MEDLINE
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Revista:
Nanotechnology
Año:
2009
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Article
País de afiliación:
Estados Unidos