Generic nano-imprint process for fabrication of nanowire arrays.
Nanotechnology
; 21(6): 065305, 2010 Feb 10.
Article
en En
| MEDLINE
| ID: mdl-20057022
ABSTRACT
A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 degrees C for InP and 700 degrees C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
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MEDLINE
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Revista:
Nanotechnology
Año:
2010
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Article
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Países Bajos