Copper indium gallium selenide (CIGS) photovoltaic devices made using multistep selenization of nanocrystal films.
ACS Appl Mater Interfaces
; 5(18): 9134-40, 2013 Sep 25.
Article
en En
| MEDLINE
| ID: mdl-23957691
ABSTRACT
The power conversion efficiency of photovoltaic devices made with ink-deposited Cu(InxGa1-x)Se2 (CIGS) nanocrystal layers can be enhanced by sintering the nanocrystals with a high temperature selenization process. This process, however, can be challenging to control. Here, we report that ink deposition followed by annealing under inert gas and then selenization can provide better control over CIGS nanocrystal sintering and yield generally improved device efficiency. Annealing under argon at 525 °C removes organic ligands and diffuses sodium from the underlying soda lime glass into the Mo back contact to improve the rate and quality of nanocrystal sintering during selenization at 500 °C. Shorter selenization time alleviates excessive MoSe2 formation at the Mo back contact that leads to film delamination, which in turn enables multiple cycles of nanocrystal deposition and selenization to create thicker, more uniform absorber films. Devices with power conversion efficiency greater than 7% are fabricated using the multiple step nanocrystal deposition and sintering process.
Texto completo:
1
Bases de datos:
MEDLINE
Asunto principal:
Selenio
/
Energía Solar
/
Cobre
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Nanopartículas
/
Galio
/
Indio
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2013
Tipo del documento:
Article
País de afiliación:
Estados Unidos