Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress.

Signorello, G; Lörtscher, E; Khomyakov, P A; Karg, S; Dheeraj, D L; Gotsmann, B; Weman, H; Riel, H

Signorello, G; Lörtscher, E; Khomyakov, P A; Karg, S; Dheeraj, D L; Gotsmann, B; Weman, H; Riel, H.

Afiliación

Signorello G; IBM Research-Zurich, Säumerstrasse 4, Rüschlikon CH-8803, Switzerland.
Lörtscher E; IBM Research-Zurich, Säumerstrasse 4, Rüschlikon CH-8803, Switzerland.
Khomyakov PA; IBM Research-Zurich, Säumerstrasse 4, Rüschlikon CH-8803, Switzerland.
Karg S; IBM Research-Zurich, Säumerstrasse 4, Rüschlikon CH-8803, Switzerland.
Dheeraj DL; 1] Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim NO-7491, Norway [2] CrayoNano AS, Otto Nielsens vei 12, Trondheim NO-7052, Norway.
Gotsmann B; IBM Research-Zurich, Säumerstrasse 4, Rüschlikon CH-8803, Switzerland.
Weman H; Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim NO-7491, Norway.
Riel H; IBM Research-Zurich, Säumerstrasse 4, Rüschlikon CH-8803, Switzerland.

Nat Commun ; 5: 3655, 2014 Apr 10.

Article en En | MEDLINE | ID: mdl-24718053

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2014 Tipo del documento: Article País de afiliación: Suiza

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