A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering.

Ho, Kuan-I; Boutchich, Mohamed; Su, Ching-Yuan; Moreddu, Rosalia; Marianathan, Eugene Sebastian Raj; Montes, Laurent; Lai, Chao-Sung

Ho, Kuan-I; Boutchich, Mohamed; Su, Ching-Yuan; Moreddu, Rosalia; Marianathan, Eugene Sebastian Raj; Montes, Laurent; Lai, Chao-Sung.

Afiliación

Ho KI; Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, 333, Taiwan.
Boutchich M; GeePs, CNRS UMR8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 Rue Joliot-Curie, Plateau de Moulon, Gif-sur-Yvette, 91192, CEDEX, France.
Su CY; Graduate Institute of Energy Engineering, National Central University, Jhongli City, Taoyuan County, 32001, Taiwan.
Moreddu R; Department of Electronic Engineering, Polytechnic of Turin, Corso Duca degli Abruzzi 24, 10129, Torino, Italy.
Marianathan ES; Grenoble INP-Phelma, Université Grenoble Alpes, 3 Parvis Louis Néel, BP 257, 38016, Grenoble, CEDEX 01, France.
Montes L; IMEP-LAHC, Grenoble INP, Minatec, BP 257, 38016, Grenoble, France.
Lai CS; Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, 333, Taiwan.

Adv Mater ; 27(41): 6519-25, 2015 Nov 04.

Article en En | MEDLINE | ID: mdl-26398725

Palabras clave

field-effect transistors; fluorographene; graphene; scattering; self-aligned

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article País de afiliación: Taiwán

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