Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures.
Luminescence
; 31(1): 4-7, 2016 Feb.
Article
en En
| MEDLINE
| ID: mdl-26781789
ABSTRACT
The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs.
Palabras clave
Texto completo:
1
Bases de datos:
MEDLINE
Asunto principal:
Semiconductores
/
Temperatura
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Compuestos de Selenio
/
Fotones
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Dióxido de Silicio
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Compuestos de Cadmio
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Puntos Cuánticos
/
Luminiscencia
Idioma:
En
Revista:
Luminescence
Asunto de la revista:
BIOFISICA
/
BIOQUIMICA
Año:
2016
Tipo del documento:
Article
País de afiliación:
China